JPS63122151A - Manufacture of semiconductor device - Google Patents

Abstract

PURPOSE:To execute the fine processing of a semiconductor device during a simplified process where a contact hole and an insulating film between wiring layers are formed at the same time. CONSTITUTION:After an insulating film 103 has been formed on an impurity- diffused layer 101 or an underlayer wiring part 102, a photoresist layer 104 is applied on the surface of this assembly. After the photoresist layer has been removed at the part where a contact hole is to be formed at the photoresist layer, the exposed insulating film and the photoresist layer are etched simultaneously at almost the same rate by means of a plasma gas. Then, the thin part of the photoresist layer, i.e. the exposed insulating film where the photoresist layer does not exist at the protruding part of the insulating film, is etched. Finally, almost no uneven part exists as a whole on the insulating film, and a contact hole 105 can be formed.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of industrial application] The present invention relates to a method for manufacturing a semiconductor device, in which an impurity diffusion layer or an impurity diffusion layer of a semiconductor device is used. 1. Forming a hole (hereinafter referred to as a contact hole) in a part of the formed insulating film to connect it to the wiring layer formed on the insulation film, as described in IaWB. Reduce the unevenness of the insulating film between (
This relates to microfabrication of the semiconductor H[by planarization].

[Summary of the invention]

The present invention is a method for manufacturing semiconductor devices that uses photoresists. By cutting (etching) one school at almost the same rate, the formation and layout of the funtact hole is done! ! i
By simultaneously flattening the insulating film between the layers, fine wiring of semiconductor devices can be realized.

(Conventional technology) In the conventional manufacturing method of semiconductor devices, the arrangement to cope with miniaturization! 1IAI:! When flattening the insulating film between the two and forming a contact hole, 1) As shown in FIG. 2, a liquid insulating film is applied and solidified to form a bale and a contact hole. 2) After forming contact holes as shown in Figure 173, the entire surface is planarized by high temperature treatment. Or 3)
After forming a planarizing material as shown in FIG. 4, the entire surface is etched and etched back to make it planar (t11), and then contacts are formed.

Kasa's method was compatible with fine wiring.

[The r8Jm point that the invention attempts to solve] However, in the above-mentioned conventional manufacturing method, 1) a planarizing material for flattening the tH is formed between wiring layers.

Or, by adding processes such as 2) high-temperature treatment, 3) two-time etching process, etc., fine wiring cannot be performed unless a contact hole is formed after planarizing the isolation & 1 film between the interconnects 1, 1, and 1. That's I! ! JI! There was an I.

That is, problems in microfabrication have arisen, such as an increase in cost due to the increase in process steps and difficulty in miniaturization for high-temperature processing. Further, when the process of planarizing the insulating film between the wiring layers is not performed, problems such as M-line wiring and short circuits occur.

Therefore, in order to solve the above-mentioned drawbacks, the present invention has developed
By making the etching rate of the insulating film between the aFPIs almost the same, formation of contact holes and
By reducing (flattening) the unevenness of the absolute R film between the wiring layers due to the flatness when the photoresist is applied, it is possible to improve the fine curvature of the semiconductor device with a simplified process. The purpose is to do something.

(Means for Solving the Problems) The method for manufacturing a semi-JrJ device according to the present invention includes: a) a method for manufacturing a semi-JrJ body device of the present invention; ! Step of forming a film: 1)) Step of applying a photoresist on the insulating crotch and removing a part of the photoresist; C) While etching the photoresist and the insulating film at the same time by etching with plasma gas. , a process of forming a contact hole for establishing electrical connection between the impurity diffusion layer or wiring layer under the insulating film and the contact layer formed on the insulating film, and reducing the unevenness of the insulating film. , d) Remove the remaining photoresist and mark on the section &IIa! The method is characterized by comprising a step of forming a notification.

〔Example〕

Examples of the present invention are described below.

1st I! i0λ), the impurity diffusion layer 1 of the semiconductor device
An insulating film 103 is formed on the lower layer 01 or the lower layer 11102. 7. Apply a photoresist 104 as shown in FIG. 1b). At this time, the insulating film has irregularities, but due to the nature of the liquid, the photoresist is applied thickly to the concave parts and thinly to the convex parts, so there is little irregularity as a whole! l! He is in a B-shape prone position. A portion of this photoresist where a contact hole will be formed is removed.

As shown in Fig. m1 (C), the exposed
The photoresist film and the photoresist are etched at the same time at almost the same rate (eventually, the photoresist on the thinner parts of the photoresist and the convex parts of the film disappears, and the exposed insulating film is also etched. At this time, the photoresist still remains on the four parts of the insulating film, so it is not etched.Finally, as shown in FIG. is formed. Even better, the contact hole thus formed has a slope due to the effect of etching the side surface of the photoresist, making it suitable for fine wiring. After removing the remaining photoresist as shown in FIG. 1C), an upper layer 1106 is formed.

The insulating film between the wiring layers formed by the above manufacturing method has few irregularities and is almost flat, so even if the next wiring layer is minutely processed, problems such as disconnections and short circuits will not occur. In addition, since the contact hole formed by this method is inclined, it is also strong against disconnection and has the effect of lowering the resistance in the contact hole. This is a manufacturing method that can reduce costs. Furthermore, since no heating process is used as in this embodiment, it is advantageous for miniaturization of semiconductor devices.

〔Effect of the invention〕

The effects of the present invention are that by forming contact holes and forming an insulating film between wiring layers at the same time, the process is simpler than the conventional technology, the product cost is low, and microfabrication is possible. became.

[Brief explanation of the drawing]

1A) to 1C) are diagrams showing a cross-sectional structure step by step as an embodiment of the method for manufacturing a semiconductor device of the present invention. Figures 2 a) to C) are process diagrams for applying a liquid sink insulation shell according to the prior art, Figures 8 a) to b) are process diagrams for high temperature treatment according to the prior art, and Figures 4 a) to d). 1 is a schematic diagram of a process using edge back according to the prior art. 101...Notification of impurity diffusion! 02... Lines of concern] 03... Insulating film 104... Photoresist 105... Contact hole 106... 1 notification wiring or more Applicant Seiko Epson Corporation Ko 2nd @ 3I blade

Claims (1)

[Claims] a) Step of forming an insulating film on an impurity diffusion port or wiring layer of a semiconductor device; b) Applying a photoresist on the insulating film and removing a part of the photoresist. c) To establish conduction between the impurity diffusion layer or wiring layer under the insulation film and the wiring layer formed on the insulation crotch while etching the photoresist and the insulation film at the same time by etching with plasma gas. d) removing the remaining photoresist and forming a wiring layer on the insulating film. Method.