JPS63124465A - バイポ−ラトランジスタの製造方法 - Google Patents

バイポ−ラトランジスタの製造方法

Info

Publication number
JPS63124465A
JPS63124465A JP61271320A JP27132086A JPS63124465A JP S63124465 A JPS63124465 A JP S63124465A JP 61271320 A JP61271320 A JP 61271320A JP 27132086 A JP27132086 A JP 27132086A JP S63124465 A JPS63124465 A JP S63124465A
Authority
JP
Japan
Prior art keywords
layer
semiconductor layer
electrode
film
base electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP61271320A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0588541B2 (th
Inventor
Kazuhiko Honjo
和彦 本城
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP61271320A priority Critical patent/JPS63124465A/ja
Publication of JPS63124465A publication Critical patent/JPS63124465A/ja
Publication of JPH0588541B2 publication Critical patent/JPH0588541B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)
JP61271320A 1986-11-13 1986-11-13 バイポ−ラトランジスタの製造方法 Granted JPS63124465A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61271320A JPS63124465A (ja) 1986-11-13 1986-11-13 バイポ−ラトランジスタの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61271320A JPS63124465A (ja) 1986-11-13 1986-11-13 バイポ−ラトランジスタの製造方法

Publications (2)

Publication Number Publication Date
JPS63124465A true JPS63124465A (ja) 1988-05-27
JPH0588541B2 JPH0588541B2 (th) 1993-12-22

Family

ID=17498409

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61271320A Granted JPS63124465A (ja) 1986-11-13 1986-11-13 バイポ−ラトランジスタの製造方法

Country Status (1)

Country Link
JP (1) JPS63124465A (th)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5344786A (en) * 1990-08-31 1994-09-06 Texas Instruments Incorporated Method of fabricating self-aligned heterojunction bipolar transistors
US5665614A (en) * 1995-06-06 1997-09-09 Hughes Electronics Method for making fully self-aligned submicron heterojunction bipolar transistor
US5702958A (en) * 1994-08-09 1997-12-30 Texas Instruments Incorporated Method for the fabrication of bipolar transistors
JP2002170829A (ja) * 2000-12-04 2002-06-14 Nec Corp ヘテロ接合型バイポーラトランジスタ及びその製造方法
JP2011176171A (ja) * 2010-02-25 2011-09-08 Nippon Telegr & Teleph Corp <Ntt> バイポーラトランジスタおよびその製造方法

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5344786A (en) * 1990-08-31 1994-09-06 Texas Instruments Incorporated Method of fabricating self-aligned heterojunction bipolar transistors
US5702958A (en) * 1994-08-09 1997-12-30 Texas Instruments Incorporated Method for the fabrication of bipolar transistors
US5665614A (en) * 1995-06-06 1997-09-09 Hughes Electronics Method for making fully self-aligned submicron heterojunction bipolar transistor
US5729033A (en) * 1995-06-06 1998-03-17 Hughes Electronics Fully self-aligned submicron heterojunction bipolar transistor
JP2002170829A (ja) * 2000-12-04 2002-06-14 Nec Corp ヘテロ接合型バイポーラトランジスタ及びその製造方法
JP2011176171A (ja) * 2010-02-25 2011-09-08 Nippon Telegr & Teleph Corp <Ntt> バイポーラトランジスタおよびその製造方法

Also Published As

Publication number Publication date
JPH0588541B2 (th) 1993-12-22

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