JPS6312829U - - Google Patents
Info
- Publication number
- JPS6312829U JPS6312829U JP10615386U JP10615386U JPS6312829U JP S6312829 U JPS6312829 U JP S6312829U JP 10615386 U JP10615386 U JP 10615386U JP 10615386 U JP10615386 U JP 10615386U JP S6312829 U JPS6312829 U JP S6312829U
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- stand
- vapor phase
- phase growth
- growth apparatus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001947 vapour-phase growth Methods 0.000 claims description 4
- 239000012495 reaction gas Substances 0.000 claims 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 1
- 239000007789 gas Substances 0.000 claims 1
- 239000011521 glass Substances 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 3
- 239000000376 reactant Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Description
第1図Aは本考案のウエハスタンドを示す平面
図、第1図Bは第1図Aの矢視C―C、第1図C
は第1図Aの矢視D―D、第2図は第1図Aの溝
を示す詳細図、第3図は従来の溝と反応ガス流と
を示す図、第4図は気相成長装置を示し、第5図
Aは、従来のウエハスタンドを示す平面図、第5
図Bは、第5図Aの矢視A―A、第5図Cは、第
5図Aの矢視B―B、第6図は、第2図の断面E
―E、第7図は、第6図に対応する第2実施例を
示す図。
2:ウエハ、8a:薄膜、34:バー、35:
溝、40:下端、41:外流、42:内流、43
〜44:流れ。
FIG. 1A is a plan view showing the wafer stand of the present invention, FIG. 1B is a view taken along the arrow C-C in FIG. 1A, and FIG.
is the arrow view D-D in Figure 1A, Figure 2 is a detailed view showing the groove in Figure 1A, Figure 3 is a diagram showing the conventional groove and reactant gas flow, and Figure 4 is a diagram showing vapor phase growth. 5A is a plan view showing a conventional wafer stand;
Figure B is taken along arrow A-A in Figure 5A, Figure 5C is taken along arrow B-B in Figure 5A, and Figure 6 is cross-section E in Figure 2.
-E, FIG. 7 is a diagram showing a second embodiment corresponding to FIG. 6. 2: Wafer, 8a: Thin film, 34: Bar, 35:
Groove, 40: Lower end, 41: Outer flow, 42: Inner flow, 43
~44: Flow.
Claims (1)
ガスを導入し、反応管内でウエハが反応ガス流に
対して直立するように静置するウエハスタンドに
おいて、ウエハスタンドを中空体のバーとし、定
間隔ににウエハを静置する溝を設け、バーの内周
域と外周域とに溝を介して反応ガス流通が自由な
ることを特徴とする気相成長装置用ウエハスタン
ド。 2 バーは硬質ガラス、石英ガラス若しくは金属
とし、複数本を平行に設けることを特徴とする実
用新案登録請求の範囲第1項記載の気相成長装置
用ウエハスタンド。 3 溝はバー芯に対して略V字状とし、ウエハと
は点接触することを特徴とする実用新案登録請求
の範囲第1項記載の気相成長装置用ウエハスタン
ド。[Scope of Claim for Utility Model Registration] 1. A wafer stand in which a reaction tube is provided so as to be enclosed in a heater, a reaction gas is introduced, and the wafer is left standing in the reaction tube so as to stand upright against the flow of the reaction gas. For use in a vapor phase growth apparatus, characterized in that the bar is a hollow body, grooves are provided at regular intervals for placing the wafer, and reactive gases can freely flow through the grooves between the inner and outer circumferential areas of the bar. wafer stand. 2. The wafer stand for a vapor phase growth apparatus according to claim 1, wherein the bars are made of hard glass, quartz glass, or metal, and a plurality of bars are provided in parallel. 3. The wafer stand for a vapor phase growth apparatus according to claim 1, wherein the groove is substantially V-shaped with respect to the bar core and makes point contact with the wafer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10615386U JPS6312829U (en) | 1986-07-10 | 1986-07-10 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10615386U JPS6312829U (en) | 1986-07-10 | 1986-07-10 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6312829U true JPS6312829U (en) | 1988-01-27 |
Family
ID=30981253
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10615386U Pending JPS6312829U (en) | 1986-07-10 | 1986-07-10 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6312829U (en) |
-
1986
- 1986-07-10 JP JP10615386U patent/JPS6312829U/ja active Pending