JPS6316656A - Manufacture of semiconductor device - Google Patents

Abstract

PURPOSE:To manufacture a bipolar transistor with good reproducibility by forming the transistor of a semiconductor device which contains a field effect transistor and the bipolar transistor. CONSTITUTION:Resist films 5a-5c for forming an inversion preventing region are formed in a predetermined shape on a P-type silicon substrate 1 formed with N-wells 2a, 2b after nitride films 3a-3c and resist films 4a-4c are formed. Then, with the film 5a for forming an inversion preventing region as a mask a part of the film 4a on the film 3a is removed, and a P-type impurity is ion implanted to form a P<+> type layer 6 to become a base region and an inversion preventing region 7. Thereafter, the films 5a-5c and 4a-4c are removed, a LOCOS oxidation is executed to form an oxide film 10 on a field region, an N<++> type emitter region 8a, a contact 8d of a collector region and a source region 8b and a drain region 8c of NMOS are formed, and a PMOS is further formed in the well 2b.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for manufacturing a semiconductor device, and in particular to a method for manufacturing a semiconductor device, and particularly to a method for manufacturing a semiconductor device.
-Relates to a method of manufacturing a semiconductor device including an integrated circuit having a transistor and a bipolar transistor.

[Conventional technology 1] Recently, as the range of applications of semiconductor devices has expanded, the variety of so-called BiMO3 integrated circuit products, which include both field-effect transistors and bipolar transistors, has increased and become common. BiMO3 integrated circuits that include bipolar transistors as part of circuit elements, for example, BicMOS integrated circuits, are manufactured by adding a new process for manufacturing bipolar transistors to the manufacturing process of CMO3 devices, or by adding a new process for manufacturing bipolar transistors to the manufacturing process of CMO3 devices. It utilized a parasitic bipolar transistor formed inside.

[Problem that the invention seeks to solve]

The conventional semiconductor device manufacturing method described above is, for example, CM
Incorporating parasitic bipolar transistors, which are formed together in the manufacturing process of an OS device, into a circuit as a component has the disadvantage of poor reproducibility because it is difficult to control the electrical characteristics of the parasitic bipolar transistors. In addition, in the case of a manufacturing method in which a mask process for forming a bipolar transistor is separately added, reproducibility is improved, but there is a drawback that the manufacturing process becomes longer.

An object of the present invention is to provide a method for manufacturing a semiconductor device that can simultaneously manufacture bipolar transistors and circuit elements including field effect transistors with good reproducibility without increasing the number of manufacturing steps.

[Means for solving problems]

The method for manufacturing a semiconductor device of the present invention includes the steps of forming a well of an opposite conductivity type in a semiconductor substrate of a -conductivity type, and forming a base region of one conductivity type in the well, and simultaneously forming a base region of one conductivity type in the semiconductor substrate other than the well. Forming an inversion prevention region of one conductivity type, forming a source region and a drain region of opposite conductivity type in the semiconductor substrate other than the well and the inversion prevention region, and simultaneously forming an emitter region of the opposite conductivity type in the base region. - A step of forming an ivy region.

〔Example〕

Next, embodiments of the present invention will be described with reference to the drawings.

FIGS. 1(a) to 1(c) are cross-sectional views of a semiconductor chip shown in order of steps for explaining an embodiment of the present invention.

As shown in FIG. 1(a), resist films 5a to 5C for forming an anti-inversion region are formed on a P-type silicon substrate 1 on which N wells 2a and 2b are formed, and nitride films 3a to 3C and resists 1 to 4a to After forming 4C, it is formed into a predetermined shape.

Next, as shown in FIG. 1(b), a resist It! for forming an inversion prevention region is applied. Using 5a as a mask, a part of the resist film 4a on the nitride film 3a is removed to form a base region, and 1 and P-type impurities are ion-implanted to form a P+ layer 6 that will become a base region and an inversion prevention region 7. .

Thereafter, as shown in FIG.
5c and the resist l-films 4a to 4C are removed, and the LOGO
3 oxidation is performed to form an oxide film 10 on the field region,
Next, after forming an N-type emitter region 8a, a collector region contact portion 8d, and an NMO3 source region 8b and drain region 8C on a predetermined diffusion region, further,
A PMO3 is also formed in the N-well 2b to form a B1CMOS integrated circuit for explaining this embodiment.

Here, the thickness of the resist films 5a to 5C is the thickness of the resist film 4a.
It is necessary to use something sufficiently thicker than ~4C.

Further, both resist films 4a to 4C and 5a to 5C may be made of the same material or may have different characteristics.

〔Effect of the invention〕

As explained above, the present invention enables bipolar transistors to be manufactured with good reproducibility without adding any special process to the field effect transistor process by forming the bipolar transistor of a semiconductor device including a field effect transistor and a bipolar transistor in a well. It has the advantage of being manufacturable.

Furthermore, the present invention has the effect that since the base region is formed in the well by ion implantation for forming the inversion prevention region, the base region can be made sufficiently thin, and a bipolar transistor with a high current amplification factor can be obtained. There is also.

[Brief explanation of drawings]

FIGS. 1(a) to 1(c) are cross-sectional views of a semiconductor chip shown in order of steps for explaining an embodiment of the present invention. 1...P type silicon substrate, 2a, 2b...N well, 3a, 3b, 3cm nitride film, 4a, 4b, 4c, 5a
, 5b, 5c... resist film, 6... base region,
7... Inversion prevention region, 8a... Emitter region, 8b
...Source region, 8C...Drain region, 8d...
- Contact region, 9a... Source region, 9b...
Drain region, 10... Oxide film, 1], a, llb.
...Gate electrode.

Claims (1)

[Claims] forming a well of an opposite conductivity type in a semiconductor substrate of one conductivity type, forming a base region of one conductivity type in the well, and at the same time forming an inversion prevention region of one conductivity type in the semiconductor substrate other than the well; forming a source region and a drain region of opposite conductivity type in the semiconductor substrate other than the well and the inversion prevention region, and simultaneously forming an emitter region of opposite conductivity type in the base region. A method for manufacturing a semiconductor device.