JPS63261769A - 酸化物超電導材料の作製方法 - Google Patents

酸化物超電導材料の作製方法

Info

Publication number: JPS63261769A
Authority: JP; Japan
Prior art keywords: oxygen; film; ceramic; oxide; superconducting
Prior art date: 1987-04-18
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Granted

Application number

JP62095856A

Other languages

English (en)

Japanese (ja)

Other versions

JPH0577313B2 (de

Inventor

Kiyoshi Takeuchi

潔竹内

Yoichi Okabe

洋一岡部

Hideomi Koinuma

秀臣鯉沼

Shunpei Yamazaki

舜平山崎

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Semiconductor Energy Laboratory Co Ltd

Original Assignee

Semiconductor Energy Laboratory Co Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1987-04-18

Filing date

1987-04-18

Publication date

1988-10-28

1987-04-18 Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd

1987-04-18 Priority to JP62095856A priority Critical patent/JPS63261769A/ja

1988-10-28 Publication of JPS63261769A publication Critical patent/JPS63261769A/ja

1993-10-26 Publication of JPH0577313B2 publication Critical patent/JPH0577313B2/ja

Status Granted legal-status Critical Current

Links

238000004519 manufacturing process Methods 0.000 title claims description 9
239000000463 material Substances 0.000 title abstract description 21
239000001301 oxygen Substances 0.000 claims abstract description 29
229910052760 oxygen Inorganic materials 0.000 claims abstract description 29
QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 28
239000000919 ceramic Substances 0.000 claims abstract description 18
238000000034 method Methods 0.000 claims abstract description 11
229910052751 metal Inorganic materials 0.000 claims description 9
239000002184 metal Substances 0.000 claims description 9
TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 5
239000004065 semiconductor Substances 0.000 claims description 5
XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
238000000576 coating method Methods 0.000 claims description 4
230000002950 deficient Effects 0.000 claims description 4
230000003647 oxidation Effects 0.000 claims description 4
238000007254 oxidation reaction Methods 0.000 claims description 4
229910052727 yttrium Inorganic materials 0.000 claims description 4
VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 4
RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 3
229910052782 aluminium Inorganic materials 0.000 claims description 3
239000011248 coating agent Substances 0.000 claims description 3
229910052802 copper Inorganic materials 0.000 claims description 3
239000010949 copper Substances 0.000 claims description 3
BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims description 3
229910052710 silicon Inorganic materials 0.000 claims description 3
239000010703 silicon Substances 0.000 claims description 3
229910001936 tantalum oxide Inorganic materials 0.000 claims description 3
OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 3
VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 2
RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
230000001590 oxidative effect Effects 0.000 claims description 2
229910052814 silicon oxide Inorganic materials 0.000 claims description 2
229910052715 tantalum Inorganic materials 0.000 claims description 2
GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 2
229910052719 titanium Inorganic materials 0.000 claims description 2
239000010936 titanium Substances 0.000 claims description 2
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
229910052788 barium Inorganic materials 0.000 claims 1
DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims 1
239000012212 insulator Substances 0.000 claims 1
239000007787 solid Substances 0.000 abstract description 5
238000009792 diffusion process Methods 0.000 abstract description 4
239000007790 solid phase Substances 0.000 abstract description 3
239000007858 starting material Substances 0.000 abstract description 2
238000001771 vacuum deposition Methods 0.000 abstract description 2
239000010408 film Substances 0.000 description 21
238000002161 passivation Methods 0.000 description 5
IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
238000010438 heat treatment Methods 0.000 description 4
239000007788 liquid Substances 0.000 description 4
239000013078 crystal Substances 0.000 description 3
239000011224 oxide ceramic Substances 0.000 description 3
229910052574 oxide ceramic Inorganic materials 0.000 description 3
230000000737 periodic effect Effects 0.000 description 3
QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Chemical compound [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 description 2
230000000903 blocking effect Effects 0.000 description 2
239000011575 calcium Substances 0.000 description 2
230000006866 deterioration Effects 0.000 description 2
229910052732 germanium Inorganic materials 0.000 description 2
GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
239000011777 magnesium Substances 0.000 description 2
150000002739 metals Chemical class 0.000 description 2
229910052757 nitrogen Inorganic materials 0.000 description 2
239000002887 superconductor Substances 0.000 description 2
OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 1
239000005751 Copper oxide Substances 0.000 description 1
229910052692 Dysprosium Inorganic materials 0.000 description 1
229910052691 Erbium Inorganic materials 0.000 description 1
229910052693 Europium Inorganic materials 0.000 description 1
229910052688 Gadolinium Inorganic materials 0.000 description 1
229910052689 Holmium Inorganic materials 0.000 description 1
206010021143 Hypoxia Diseases 0.000 description 1
229910052765 Lutetium Inorganic materials 0.000 description 1
FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
229910000577 Silicon-germanium Chemical group 0.000 description 1
229910052771 Terbium Inorganic materials 0.000 description 1
229910052775 Thulium Inorganic materials 0.000 description 1
229910052768 actinide Inorganic materials 0.000 description 1
150000001255 actinides Chemical class 0.000 description 1
229910052790 beryllium Inorganic materials 0.000 description 1
ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
229910052791 calcium Inorganic materials 0.000 description 1
238000007796 conventional method Methods 0.000 description 1
229910000431 copper oxide Inorganic materials 0.000 description 1
230000003247 decreasing effect Effects 0.000 description 1
AAOVKJBEBIDNHE-UHFFFAOYSA-N diazepam Chemical compound N=1CC(=O)N(C)C2=CC=C(Cl)C=C2C=1C1=CC=CC=C1 AAOVKJBEBIDNHE-UHFFFAOYSA-N 0.000 description 1
KBQHZAAAGSGFKK-UHFFFAOYSA-N dysprosium atom Chemical compound [Dy] KBQHZAAAGSGFKK-UHFFFAOYSA-N 0.000 description 1
230000000694 effects Effects 0.000 description 1
UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 description 1
OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 description 1
UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 description 1
238000010574 gas phase reaction Methods 0.000 description 1
YBMRDBCBODYGJE-UHFFFAOYSA-N germanium oxide Inorganic materials O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 description 1
239000001307 helium Substances 0.000 description 1
229910052734 helium Inorganic materials 0.000 description 1
SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
KJZYNXUDTRRSPN-UHFFFAOYSA-N holmium atom Chemical compound [Ho] KJZYNXUDTRRSPN-UHFFFAOYSA-N 0.000 description 1
239000012535 impurity Substances 0.000 description 1
229910052747 lanthanoid Inorganic materials 0.000 description 1
150000002602 lanthanoids Chemical class 0.000 description 1
OHSVLFRHMCKCQY-UHFFFAOYSA-N lutetium atom Chemical compound [Lu] OHSVLFRHMCKCQY-UHFFFAOYSA-N 0.000 description 1
229910052749 magnesium Inorganic materials 0.000 description 1
SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
PVADDRMAFCOOPC-UHFFFAOYSA-N oxogermanium Chemical group [Ge]=O PVADDRMAFCOOPC-UHFFFAOYSA-N 0.000 description 1
150000002926 oxygen Chemical class 0.000 description 1
230000000704 physical effect Effects 0.000 description 1
230000002265 prevention Effects 0.000 description 1
229910052705 radium Inorganic materials 0.000 description 1
HCWPIIXVSYCSAN-UHFFFAOYSA-N radium atom Chemical compound [Ra] HCWPIIXVSYCSAN-UHFFFAOYSA-N 0.000 description 1
229910052706 scandium Inorganic materials 0.000 description 1
SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
238000007650 screen-printing Methods 0.000 description 1
238000004544 sputter deposition Methods 0.000 description 1
229910052712 strontium Inorganic materials 0.000 description 1
CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
239000000758 substrate Substances 0.000 description 1
GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 description 1
239000010409 thin film Substances 0.000 description 1
230000005641 tunneling Effects 0.000 description 1
229940072690 valium Drugs 0.000 description 1

Classifications

- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E40/00—Technologies for an efficient electrical power generation, transmission or distribution
- Y02E40/60—Superconducting electric elements or equipment; Power systems integrating superconducting elements or equipment

Landscapes

Superconductors And Manufacturing Methods Therefor (AREA)
Inorganic Compounds Of Heavy Metals (AREA)
Superconductor Devices And Manufacturing Methods Thereof (AREA)

JP62095856A 1987-04-18 1987-04-18 酸化物超電導材料の作製方法 Granted JPS63261769A (ja)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
JP62095856A JPS63261769A (ja)	1987-04-18	1987-04-18	酸化物超電導材料の作製方法

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP62095856A JPS63261769A (ja)	1987-04-18	1987-04-18	酸化物超電導材料の作製方法

Publications (2)

Publication Number	Publication Date
JPS63261769A true JPS63261769A (ja)	1988-10-28
JPH0577313B2 JPH0577313B2 (de)	1993-10-26

Family

ID=14149010

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP62095856A Granted JPS63261769A (ja)	1987-04-18	1987-04-18	酸化物超電導材料の作製方法

Country Status (1)

Country	Link
JP (1)	JPS63261769A (de)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS6410512A (en) *	1987-07-01	1989-01-13	Matsushita Electric Industrial Co Ltd	Superconductor structure
WO1990006286A1 (en) *	1988-12-05	1990-06-14	Massachusetts Institute Of Technology	Methods for processing superconducting materials
US5166131A (en) *	1988-12-05	1992-11-24	Massachusetts Institute Of Technology	Methods for processing superconducting materials

Citations (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS6047478A (ja) *	1983-08-26	1985-03-14	Hitachi Ltd	ジヨセフソン接合素子
JPS60250682A (ja) *	1984-05-28	1985-12-11	Hitachi Ltd	超電導素子
JPS61181178A (ja) *	1985-02-06	1986-08-13	Rikagaku Kenkyusho	ジヨセフソン接合素子とその製造方法
JPS61206279A (ja) *	1985-03-11	1986-09-12	Hitachi Ltd	超電導素子

1987
- 1987-04-18 JP JP62095856A patent/JPS63261769A/ja active Granted

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS6047478A (ja) *	1983-08-26	1985-03-14	Hitachi Ltd	ジヨセフソン接合素子
JPS60250682A (ja) *	1984-05-28	1985-12-11	Hitachi Ltd	超電導素子
JPS61181178A (ja) *	1985-02-06	1986-08-13	Rikagaku Kenkyusho	ジヨセフソン接合素子とその製造方法
JPS61206279A (ja) *	1985-03-11	1986-09-12	Hitachi Ltd	超電導素子

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS6410512A (en) *	1987-07-01	1989-01-13	Matsushita Electric Industrial Co Ltd	Superconductor structure
WO1990006286A1 (en) *	1988-12-05	1990-06-14	Massachusetts Institute Of Technology	Methods for processing superconducting materials
US5166131A (en) *	1988-12-05	1992-11-24	Massachusetts Institute Of Technology	Methods for processing superconducting materials

Also Published As

Publication number	Publication date
JPH0577313B2 (de)	1993-10-26

Legal Events

Date	Code	Title	Description
2005-10-26	LAPS	Cancellation because of no payment of annual fees

Publication	Publication Date	Title
EP0137196B1 (de)	1988-12-28	Verfahren zur Herstellung von Materialien auf Nitridbasis mit hoher Dielektrizitätskonstanz und Vorrichtungen die diese anwenden
US4916116A (en)	1990-04-10	Method of adding a halogen element into oxide superconducting materials by ion injection
CN1034285A (zh)	1989-07-26	形成超导氧化物材料的方法和装置
JP2711253B2 (ja)	1998-02-10	超伝導膜及びその形成方法
JPH01305815A (ja)	1989-12-11	酸素の前に窒素のアニールを用いる超伝導酸化物フイルムの製法
US20040156164A1 (en)	2004-08-12	Novel gate dielectric
US4959345A (en)	1990-09-25	Method of adding oxygen into oxide superconducting materials by ion injection
JPS63261770A (ja)	1988-10-28	酸化物超電導材料の作製方法
JPH0577313B2 (de)	1993-10-26
US5137868A (en)	1992-08-11	Method for preparing a superconducting device
JPS63239742A (ja)	1988-10-05	薄膜超電導体の製造方法
JPS63261771A (ja)	1988-10-28	ジヨセフソン型装置の作製方法
US5232903A (en)	1993-08-03	Oxide superconducting device having uniform oxygen concentration
JPH02167820A (ja)	1990-06-28	Ｔ１系複合酸化物超電導体薄膜の成膜方法
JPH0825742B2 (ja)	1996-03-13	超電導材料の作製方法
JPH01203203A (ja)	1989-08-16	超伝導材料層の形成方法
JPH01111718A (ja)	1989-04-28	超電導薄膜の形成方法
JPS63274657A (ja)	1988-11-11	酸化物超電導材料およびその作製方法
JPS63274682A (ja)	1988-11-11	酸化物超電導材料の作製方法
JP2702711B2 (ja)	1998-01-26	薄膜超電導体の製造方法
JP2611332B2 (ja)	1997-05-21	薄膜超電導体の製造方法
JPH01106481A (ja)	1989-04-24	超伝導材料構造
JP2502344B2 (ja)	1996-05-29	複合酸化物超電導体薄膜の作製方法
JPH01202875A (ja)	1989-08-15	超伝導材料構造の製造方法
JP2582380B2 (ja)	1997-02-19	超伝導材料構造

JPS63261769A - 酸化物超電導材料の作製方法 - Google Patents

Info

Links

Classifications

Landscapes

Priority Applications (1)

Applications Claiming Priority (1)

Publications (2)

Family

ID=14149010

Family Applications (1)

Country Status (1)

Cited By (3)

Citations (4)

Patent Citations (4)

Cited By (3)

Also Published As

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Legal Events