JPS63272005A - Electric resistor and manufacture thereof - Google Patents
Electric resistor and manufacture thereofInfo
- Publication number
- JPS63272005A JPS63272005A JP62104416A JP10441687A JPS63272005A JP S63272005 A JPS63272005 A JP S63272005A JP 62104416 A JP62104416 A JP 62104416A JP 10441687 A JP10441687 A JP 10441687A JP S63272005 A JPS63272005 A JP S63272005A
- Authority
- JP
- Japan
- Prior art keywords
- particles
- resistor
- molybdates
- molybdate
- fired
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 7
- 239000000463 material Substances 0.000 claims abstract description 79
- 239000002245 particle Substances 0.000 claims abstract description 67
- 239000011521 glass Substances 0.000 claims abstract description 48
- MEFBJEMVZONFCJ-UHFFFAOYSA-N molybdate Chemical compound [O-][Mo]([O-])(=O)=O MEFBJEMVZONFCJ-UHFFFAOYSA-N 0.000 claims abstract description 17
- 230000001590 oxidative effect Effects 0.000 claims abstract description 17
- 238000000034 method Methods 0.000 claims abstract description 10
- 229910052784 alkaline earth metal Inorganic materials 0.000 claims abstract description 8
- 229910052684 Cerium Inorganic materials 0.000 claims abstract description 3
- 229910052692 Dysprosium Inorganic materials 0.000 claims abstract description 3
- 229910052691 Erbium Inorganic materials 0.000 claims abstract description 3
- 229910052771 Terbium Inorganic materials 0.000 claims abstract description 3
- 229910052735 hafnium Inorganic materials 0.000 claims abstract description 3
- 229910052746 lanthanum Inorganic materials 0.000 claims abstract description 3
- 229910052758 niobium Inorganic materials 0.000 claims abstract description 3
- 229910052727 yttrium Inorganic materials 0.000 claims abstract description 3
- 229910052726 zirconium Inorganic materials 0.000 claims abstract description 3
- 229910052693 Europium Inorganic materials 0.000 claims abstract 2
- 229910052688 Gadolinium Inorganic materials 0.000 claims abstract 2
- 229910052689 Holmium Inorganic materials 0.000 claims abstract 2
- 229910052779 Neodymium Inorganic materials 0.000 claims abstract 2
- 229910052777 Praseodymium Inorganic materials 0.000 claims abstract 2
- 229910052772 Samarium Inorganic materials 0.000 claims abstract 2
- 229910052775 Thulium Inorganic materials 0.000 claims abstract 2
- 229910052769 Ytterbium Inorganic materials 0.000 claims abstract 2
- 239000002243 precursor Substances 0.000 claims description 9
- 239000002131 composite material Substances 0.000 claims description 7
- -1 Alkaline earth metal molybdate Chemical class 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 claims description 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 2
- 239000010955 niobium Substances 0.000 claims description 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 2
- 229910052765 Lutetium Inorganic materials 0.000 claims 1
- XAEWLETZEZXLHR-UHFFFAOYSA-N zinc;dioxido(dioxo)molybdenum Chemical compound [Zn+2].[O-][Mo]([O-])(=O)=O XAEWLETZEZXLHR-UHFFFAOYSA-N 0.000 claims 1
- 239000004020 conductor Substances 0.000 abstract description 30
- 239000000758 substrate Substances 0.000 abstract description 23
- 239000010953 base metal Substances 0.000 abstract description 7
- 238000010030 laminating Methods 0.000 abstract description 2
- 239000000126 substance Substances 0.000 abstract description 2
- 229910052725 zinc Inorganic materials 0.000 abstract description 2
- 239000000919 ceramic Substances 0.000 description 40
- 239000000843 powder Substances 0.000 description 18
- 238000010304 firing Methods 0.000 description 16
- 239000000203 mixture Substances 0.000 description 15
- 239000011248 coating agent Substances 0.000 description 14
- 238000000576 coating method Methods 0.000 description 14
- 239000007789 gas Substances 0.000 description 13
- 238000010438 heat treatment Methods 0.000 description 12
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 9
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 8
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 description 8
- 239000000292 calcium oxide Substances 0.000 description 8
- 229920005989 resin Polymers 0.000 description 7
- 239000011347 resin Substances 0.000 description 7
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 5
- 150000001342 alkaline earth metals Chemical class 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 229910001873 dinitrogen Inorganic materials 0.000 description 5
- 229910000476 molybdenum oxide Inorganic materials 0.000 description 5
- 239000003960 organic solvent Substances 0.000 description 5
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 description 5
- 239000001856 Ethyl cellulose Substances 0.000 description 4
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 4
- 239000011575 calcium Substances 0.000 description 4
- 229910000019 calcium carbonate Inorganic materials 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- FLKPEMZONWLCSK-UHFFFAOYSA-N diethyl phthalate Chemical compound CCOC(=O)C1=CC=CC=C1C(=O)OCC FLKPEMZONWLCSK-UHFFFAOYSA-N 0.000 description 4
- 235000019325 ethyl cellulose Nutrition 0.000 description 4
- 229920001249 ethyl cellulose Polymers 0.000 description 4
- MODMKKOKHKJFHJ-UHFFFAOYSA-N magnesium;dioxido(dioxo)molybdenum Chemical compound [Mg+2].[O-][Mo]([O-])(=O)=O MODMKKOKHKJFHJ-UHFFFAOYSA-N 0.000 description 4
- 238000002156 mixing Methods 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 239000005416 organic matter Substances 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000000395 magnesium oxide Substances 0.000 description 3
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 3
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 3
- 229910000510 noble metal Inorganic materials 0.000 description 3
- 238000006722 reduction reaction Methods 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000002002 slurry Substances 0.000 description 3
- 239000012798 spherical particle Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 description 2
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 2
- 239000004327 boric acid Substances 0.000 description 2
- 229910052810 boron oxide Inorganic materials 0.000 description 2
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 2
- 239000002270 dispersing agent Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910001512 metal fluoride Inorganic materials 0.000 description 2
- 238000001000 micrograph Methods 0.000 description 2
- VLAPMBHFAWRUQP-UHFFFAOYSA-L molybdic acid Chemical compound O[Mo](O)(=O)=O VLAPMBHFAWRUQP-UHFFFAOYSA-L 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000004014 plasticizer Substances 0.000 description 2
- 238000010298 pulverizing process Methods 0.000 description 2
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- WRIDQFICGBMAFQ-UHFFFAOYSA-N (E)-8-Octadecenoic acid Natural products CCCCCCCCCC=CCCCCCCC(O)=O WRIDQFICGBMAFQ-UHFFFAOYSA-N 0.000 description 1
- VXQBJTKSVGFQOL-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethyl acetate Chemical compound CCCCOCCOCCOC(C)=O VXQBJTKSVGFQOL-UHFFFAOYSA-N 0.000 description 1
- LQJBNNIYVWPHFW-UHFFFAOYSA-N 20:1omega9c fatty acid Natural products CCCCCCCCCCC=CCCCCCCCC(O)=O LQJBNNIYVWPHFW-UHFFFAOYSA-N 0.000 description 1
- QSBYPNXLFMSGKH-UHFFFAOYSA-N 9-Heptadecensaeure Natural products CCCCCCCC=CCCCCCCCC(O)=O QSBYPNXLFMSGKH-UHFFFAOYSA-N 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 229910002926 BaMoO4 Inorganic materials 0.000 description 1
- 208000031872 Body Remains Diseases 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000001293 FEMA 3089 Substances 0.000 description 1
- 239000000020 Nitrocellulose Substances 0.000 description 1
- 239000005642 Oleic acid Substances 0.000 description 1
- ZQPPMHVWECSIRJ-UHFFFAOYSA-N Oleic acid Natural products CCCCCCCCC=CCCCCCCCC(O)=O ZQPPMHVWECSIRJ-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 125000005396 acrylic acid ester group Chemical group 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- HYFJXBYGHMZZPQ-UHFFFAOYSA-N boron(1+) Chemical compound [B+] HYFJXBYGHMZZPQ-UHFFFAOYSA-N 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 1
- AXCZMVOFGPJBDE-UHFFFAOYSA-L calcium dihydroxide Chemical compound [OH-].[OH-].[Ca+2] AXCZMVOFGPJBDE-UHFFFAOYSA-L 0.000 description 1
- 229910001634 calcium fluoride Inorganic materials 0.000 description 1
- 239000000920 calcium hydroxide Substances 0.000 description 1
- 229910001861 calcium hydroxide Inorganic materials 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 150000004649 carbonic acid derivatives Chemical class 0.000 description 1
- 150000001734 carboxylic acid salts Chemical class 0.000 description 1
- 229920002678 cellulose Polymers 0.000 description 1
- 239000001913 cellulose Substances 0.000 description 1
- 238000010344 co-firing Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 238000002788 crimping Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000002050 diffraction method Methods 0.000 description 1
- 238000007606 doctor blade method Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 150000004673 fluoride salts Chemical class 0.000 description 1
- 235000011187 glycerol Nutrition 0.000 description 1
- QXJSBBXBKPUZAA-UHFFFAOYSA-N isooleic acid Natural products CCCCCCCC=CCCCCCCCCC(O)=O QXJSBBXBKPUZAA-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- ZLNQQNXFFQJAID-UHFFFAOYSA-L magnesium carbonate Chemical compound [Mg+2].[O-]C([O-])=O ZLNQQNXFFQJAID-UHFFFAOYSA-L 0.000 description 1
- 239000001095 magnesium carbonate Substances 0.000 description 1
- 229910000021 magnesium carbonate Inorganic materials 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000011572 manganese Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- JKQOBWVOAYFWKG-UHFFFAOYSA-N molybdenum trioxide Chemical compound O=[Mo](=O)=O JKQOBWVOAYFWKG-UHFFFAOYSA-N 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229920001220 nitrocellulos Polymers 0.000 description 1
- ZQPPMHVWECSIRJ-KTKRTIGZSA-N oleic acid Chemical compound CCCCCCCC\C=C/CCCCCCCC(O)=O ZQPPMHVWECSIRJ-KTKRTIGZSA-N 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 238000004627 transmission electron microscopy Methods 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 238000009966 trimming Methods 0.000 description 1
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Landscapes
- Compositions Of Oxide Ceramics (AREA)
- Apparatuses And Processes For Manufacturing Resistors (AREA)
- Non-Adjustable Resistors (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、固定チップ抵抗器あるいは回路配線基板等に
設けられる厚膜タイプの電気抵抗体、特に非酸化性雰囲
気中で焼成して得られることが可能な電気抵抗体に関す
る。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a thick film type electrical resistor provided on a fixed chip resistor or a circuit wiring board, etc., and particularly to a thick film type electrical resistor that can be obtained by firing in a non-oxidizing atmosphere. Concerning possible electrical resistors.
従来の技術
電子機器の電気回路は、抵抗、コンデンサ、ダイオード
、トランジスタ等の各種電気素子が回路基板に実装され
て構成されることが良く行われているが、電子機器の小
型化に伴ってこれらの電気素子の実装密度をさらに高め
ることができる回路基板が多く用いられるようになって
きた。Conventional technology The electrical circuits of electronic devices are often constructed by mounting various electrical elements such as resistors, capacitors, diodes, and transistors on circuit boards, but as electronic devices become smaller, these Circuit boards that can further increase the packaging density of electrical elements have come into widespread use.
これらの回路基板に設けられる抵抗体には、抵抗体材料
ペーストを回路上に直接印刷して焼付けることにより形
成した厚膜抵抗体、あるいは角板状セラミックチップの
両端に一対の電極を形成し、双方の電極に跨がるように
前記厚膜抵抗体を形成した固定チップ抵抗器等がある。The resistors installed on these circuit boards are either thick film resistors formed by printing and baking resistor material paste directly onto the circuit, or a pair of electrodes formed at both ends of a square plate-shaped ceramic chip. There are also fixed chip resistors in which the thick film resistor is formed so as to span both electrodes.
このような厚膜抵抗体を回路基板に設けるには、従来、
例えば1500℃前後で焼成して得られたアルミナ基板
の表面にAgあるし料:iAg−Pd等の導体材料ペー
ストを塗布し、焼付けした後、例えばRungを抵抗体
材料として含有するペーストをスクリーン印刷等により
塗布し、ついで750〜850℃で焼付け、・さらに必
要に応じてトリミング等により抵抗値の調整を行なう方
法が一般的である。Conventionally, in order to provide such a thick film resistor on a circuit board,
For example, a conductive material paste such as Ag or a material such as iAg-Pd is applied to the surface of an alumina substrate obtained by firing at around 1500°C, and after baking, a paste containing, for example, Rung as a resistor material is screen printed. A common method is to apply the film by a method such as the above, then bake it at 750 to 850°C, and further adjust the resistance value by trimming or the like as necessary.
しかしながら近年、電子機器等に対する軽薄・短小化、
低コスト化の要求がさらに強まってきており、回路基板
に対しても一層の小型化、低コスト化の検討が行われる
ようになってきた。However, in recent years, electronic devices have become lighter, thinner, and smaller.
The demand for lower costs has become even stronger, and efforts are being made to further reduce the size and cost of circuit boards.
前者の小型化のための具体的な対応としては、第1に回
路基板の多層化、第2に抵抗体の内装化が行なわれてい
る0回路基板を多層化した例としては、AgあるいはA
g−Pd系等の導体材料ペーストを印刷したセラミック
グリーンシート(生シート)を積層、圧着した後、大気
中800〜1100℃で同時焼成して得られる多層配線
基板が挙げられ、また、抵抗体を内装化した例としては
、前記導体材料ペーストを印刷したセラミックグリーン
シート上にさらにRuO2系抵抗体材料ペーストを印刷
し、前記と同様に積層、圧着した後、同時焼成して得ら
れる抵抗体内装多層配線基板等が知られている。As a concrete measure for miniaturization of the former, firstly, the circuit board is multilayered, and secondly, a resistor is built inside. Examples of multilayered circuit boards include Ag or A.
Examples include multilayer wiring boards obtained by laminating and crimping ceramic green sheets (green sheets) printed with conductor material paste such as g-Pd, and then simultaneously firing them in the atmosphere at 800 to 1100°C; As an example of internalizing a resistor, a RuO2-based resistor material paste is further printed on a ceramic green sheet printed with the conductor material paste, laminated and crimped in the same manner as above, and then co-fired to obtain a resistor interior. Multilayer wiring boards and the like are known.
また、後者の低コスト化のための具体的な対応としては
、AgあるいはAg−Pd系材料のような高価な貴金属
系の導体材料に代わって、安価なNiあるいはCu等の
卑金属系の導体材料を用い、これらを窒素ガスあるいは
水素を含む窒素ガス中等、その酸化による高抵抗化を避
けることができるような中性あるいは還元性の非酸化性
雰囲気中、800〜1100℃でグリーンセラミックと
同時焼成して得られる多層配線基板が実用化されている
。また、特開昭56−153702号公報に記載されて
いるように、Mo5iz−TaSiz及びガラスからな
る抵抗体材料を、F4 <cu>導体を有するアルミナ
基板上に塗布し、熱処理して得られる厚膜抵抗体等も知
られている。In addition, as a specific measure to reduce the cost of the latter, in place of expensive noble metal conductor materials such as Ag or Ag-Pd materials, inexpensive base metal conductor materials such as Ni or Cu can be used. These are co-fired with green ceramics at 800-1100℃ in a neutral or reducing non-oxidizing atmosphere such as nitrogen gas or nitrogen gas containing hydrogen, which can avoid high resistance due to oxidation. Multilayer wiring boards obtained by this method have been put into practical use. Furthermore, as described in Japanese Patent Application Laid-Open No. 56-153702, a resistor material made of Mo5iz-TaSiz and glass is coated on an alumina substrate having an F4 <cu> conductor, and the thickness obtained by heat treatment is Film resistors and the like are also known.
発明が解決しようとする問題点
しかしながら、回路基板の小型化と低コスト化を同時に
行なうようにすると、Mo5iz−TaSiz及びガラ
スからなる抵抗体材料を非酸化性雰囲気中でグリーンセ
ラミックシートと同時焼成すると、両者の膨張率、収縮
率の相違により焼成体に反りが生じたり、Mo5iz−
TaSi、の分解反応によりガスが発生して焼成体にふ
くれが生じ易いと云う問題点がある。これを改善するた
めに、特開昭60−198703号公報に記載されてい
るように、MoS i 2−弗化金属塩(例えば弗化カ
ルシウム)及びガラスよりなる抵抗体材料を用いる例が
知られており、これについては上記のような焼成時の反
りやふくれは見られない。Problems to be Solved by the Invention However, in order to reduce the size and cost of circuit boards at the same time, it is necessary to co-fire a resistor material made of Mo5iz-TaSiz and glass with a green ceramic sheet in a non-oxidizing atmosphere. , warpage may occur in the fired body due to the difference in expansion rate and contraction rate between the two, and Mo5iz-
There is a problem that gas is generated due to the decomposition reaction of TaSi, which tends to cause blisters in the fired body. In order to improve this, an example is known in which a resistor material made of MoS i 2-metal fluoride (e.g. calcium fluoride) and glass is used, as described in JP-A-60-198703. There is no warping or blistering during firing as mentioned above.
しかしながら、このMo5tz−弗化金属及びガラスよ
りなる抵抗体材料をグリーンセラミックシートに塗布し
、同時焼成して得られた厚膜抵抗体は、95%相対湿度
中に1000時間放置すると、5〜10%の抵抗値の増
加が見られ、抵抗体としての所定の機能を果たすことが
できない。However, when a thick film resistor obtained by coating a resistor material made of Mo5tz-metal fluoride and glass on a green ceramic sheet and co-firing it for 1000 hours in 95% relative humidity, the resistance of 5 to 10 % increase in resistance value is observed, and the prescribed function as a resistor cannot be performed.
また、RuO□系抵抗系材抗体材料ガスあるいは水素を
含む窒素ガス雰囲気中でグリーンセラミックと同時焼成
したときに還元反応が起こり、抵抗値が低くなって抵抗
体としての特性を示さなくなる。Further, when the RuO□-based resistance material is co-fired with green ceramic in an antibody material gas or a nitrogen gas atmosphere containing hydrogen, a reduction reaction occurs, resulting in a low resistance value and no longer exhibiting characteristics as a resistor.
このRuO□系抵抗系材抗体材料に非酸化性雰囲気中で
焼成されると問題があるが、酸化性雰囲気中で焼成され
た場合には、抵抗体としての適度な抵抗値を持つととも
にその抵抗値の経時変化も少ない厚膜抵抗体として酸化
モリブデンからなる厚膜抵抗体が知られている。しかし
、この抵抗体は、800℃以上の温度では酸化モリブデ
ンが昇華してしまうため、800〜1100℃でグリー
ンセラミックと同時焼成することができない。There is a problem with this RuO□-based resistance antibody material when it is fired in a non-oxidizing atmosphere, but when it is fired in an oxidizing atmosphere, it has an appropriate resistance value as a resistor, and its resistance A thick film resistor made of molybdenum oxide is known as a thick film resistor whose value changes little over time. However, this resistor cannot be co-fired with green ceramic at a temperature of 800 to 1100°C because molybdenum oxide sublimes at a temperature of 800°C or higher.
このことから、非酸化性雰囲気中で焼成された焼成体に
ついても酸化性雰囲気中で焼成したと同様な性能を有す
る厚膜抵抗体の開発が望まれていた。For this reason, it has been desired to develop a thick film resistor that has the same performance even when fired in a non-oxidizing atmosphere as when fired in an oxidizing atmosphere.
本発明の目的は、固定チップ抵抗器あるいは一般の回路
基板等に使用できるのみならず、卑金属導体材料ととも
に積層して多層基板に内装化することのできる電気抵抗
体であって、抵抗値の安定な抵抗体であるのみならず、
その抵抗体材料を還元性雰囲気中で焼成することによっ
ても製造できる電気抵抗体を提供することにある。An object of the present invention is to provide an electrical resistor that can not only be used in fixed chip resistors or general circuit boards, but also can be laminated with base metal conductive materials and incorporated into multilayer boards, and which has stable resistance values. Not only is it a resistor, but
The object of the present invention is to provide an electrical resistor that can be manufactured by firing the resistor material in a reducing atmosphere.
また、本発明の他の目的は、前記電気抵抗体の特性をよ
り一層向上させることのできる製造法を提供することに
ある。Another object of the present invention is to provide a manufacturing method that can further improve the characteristics of the electrical resistor.
問題点を解決するための手段 ゛本発明は、上記
問題点を解決するために、塊状粒子と、この塊状粒子に
付着又はこの塊状粒子の近傍に存在する針状粒子と、ガ
ラス層を含有する焼成体を有することを特徴とする電気
抵抗体を提供するものである。Means for Solving the Problems ゛In order to solve the above problems, the present invention provides a method that includes lump particles, acicular particles attached to the lump particles or existing in the vicinity of the lump particles, and a glass layer. The present invention provides an electrical resistor characterized by having a fired body.
また、本発明は、電気抵抗体本体を構成する抵抗体本体
材料を含有する塊状粒子を非酸化性雰囲気中で焼成して
この塊状粒子表面を還元して針状粒子の還元生成物をこ
の塊状粒子に付着又はこの塊状粒子近傍に存在させる工
程を有することを特徴とする電気抵抗体の製造方法を提
供するものである。The present invention also provides a method for firing the bulk particles containing the resistor body material constituting the electric resistor body in a non-oxidizing atmosphere, reducing the surface of the bulk particles, and converting the reduction product of the acicular particles into the bulk particles. The present invention provides a method for producing an electrical resistor, which includes a step of adhering to particles or making them exist near the bulk particles.
次に本発明を図及び写真に基づいて詳細に説明する。Next, the present invention will be explained in detail based on drawings and photographs.
本発明の電気抵抗体は、塊状粒子と針状粒子を有するが
、これには例えば第1図に示すように、ガラスaに球状
粒子すと針状粒子Cを分散させた構造が例示され、この
例では針状粒子は球状粒子に付着しているか、その近傍
に存在している。このような構造は、接触又は近傍に存
在する球状粒子と針状粒子を通して電流を流すことがで
きる。The electrical resistor of the present invention has lumpy particles and acicular particles, such as a structure in which spherical particles and acicular particles C are dispersed in glass a, as shown in FIG. In this example, the acicular particles are attached to or in the vicinity of the spherical particles. Such a structure allows electrical current to flow through spherical particles and needle-like particles that are in contact with or in close proximity.
このような構造は、例えば抵抗体材料の塊状粒子を焼成
処理してその表面の生成物を針状に成長させることによ
って形成させることができる。Such a structure can be formed, for example, by firing bulk particles of the resistor material and growing a product on the surface into a needle shape.
このような抵抗体材料としては、下記(A)〜(G)の
少なくとも1つの群の少な(とも1種のモリブデン酸を
使用できるが、具体的には次のものが挙げられる。As such a resistor material, at least one type of molybdic acid from at least one of the following groups (A) to (G) can be used, and specifically, the following may be mentioned.
(A) アルカリ土類金属のモリブデン酸塩Meをア
ルカリ土類金属とすると、一般式MeMoO,、Mef
fMOO6、Met’11005 、MetMot、M
eMo4.0+*、MgMo0z4、MeMosO+o
、MgMo0a 、MetMOxOrr等で表されるも
のが好ましい。具体的には、例えばMgMo0a、Ca
Mo0オ、SrMo0.、BaMoO4、BaMozO
t 、BaMOaO+*、BaMo70z4、BaMo
70z4、CaMo0オ0
、NgffiMo2Q。等が挙げられる。(A) Alkaline earth metal molybdate When Me is an alkaline earth metal, the general formula MeMoO,, Mef
fMOO6, Met'11005, MetMot, M
eMo4.0+*, MgMo0z4, MeMosO+o
, MgMo0a, MetMOxOrr, etc. are preferred. Specifically, for example, MgMo0a, Ca
Mo0o, SrMo0. , BaMoO4, BaMozO
t, BaMOaO++, BaMo70z4, BaMo
70z4, CaMo0o0, NgffiMo2Q. etc.
また、次の複合モリブデン酸塩も例示される。Further, the following complex molybdates are also exemplified.
(Mgg Cay )MOO4、但し、x +y =1
、(Caw Sry )MOO4、但し、x +y−1
、(MgX Ba、 )Mo04、但し、X −1−y
−1、(MgX Ca、 Ba、 )MOO4、但し、
X +y +2 =1、(CaXSr、 Bag )M
OO4、但し、x +y +z =1 %(Mgx C
a、 Srt Ra1.、)MOO4、但し、X +y
+z +z =1、(Ca、 Sry )Moth
、但し、x +y =3、(sr、 Bay )MOO
& 、但し、x +y =3、CB)亜鉛のモリブデン
酸塩
例えばZnMoO4、ZnMOt07 、ZnJotO
qが挙げられる。(Mgg Cay) MOO4, where x + y = 1
, (Caw Sry) MOO4, where x + y-1
, (MgX Ba, )Mo04, however, X -1-y
-1, (MgX Ca, Ba, )MOO4, however,
X +y +2 = 1, (CaXSr, Bag)M
OO4, however, x + y + z = 1% (Mgx C
a, Srt Ra1. , ) MOO4, however, X +y
+z +z = 1, (Ca, Sry)Moth
, however, x + y = 3, (sr, Bay )MOO
& , where x + y = 3, CB) Zinc molybdates such as ZnMoO4, ZnMOt07, ZnJotO
An example is q.
(C) Y、、La、、Ce、Pr5Nd、Sm、E
u5Gd、Tb、Dy、110% Er、 Tl1%
Ybs Luの各元素のモリブデン酸塩及びこれらの複
数原子の複合モリブデン酸塩
例えば次のものが例示される。(C) Y, La, Ce, Pr5Nd, Sm, E
u5Gd, Tb, Dy, 110% Er, Tl1%
Examples of molybdates of each element of Ybs Lu and composite molybdates of multiple atoms thereof include the following.
・また、(Y* Ce、 )Moist 、但しx+
y =6、’(Pr、 Buy )Moist 但し
x+y =6、(Gd、IDyy )?100+z
但しx+y =6、(La、 Ndy Tbg )Mo
ist 但しx+y +z =6(Ilo、 Tm、
Yb、 )Mo0.1 但しx+y +z =6等
の複数元素からなる複合モリブデン酸塩も挙げられる。・Also, (Y* Ce, )Moist, however x+
y = 6,'(Pr, Buy) Moist However, x+y = 6, (Gd, IDyy)? 100+z
However, x+y = 6, (La, Ndy Tbg)Mo
ist However, x + y + z = 6 (Ilo, Tm,
Composite molybdates consisting of multiple elements such as Yb, )Mo0.1, however, x+y+z=6 are also included.
(D) アルミニウムのモリブデン酸塩例えばA l
、Mo、0.□が挙げられる。(D) Molybdate of aluminum, e.g. Al
, Mo, 0. □ is mentioned.
(E) ジルコニウム、ハフニウムの各元素のモリブ
デン酸塩及びこれらの複合モリブデン酸塩例えばZrM
ozOa 、H’fMOzOs 、(Zr、 Hy )
MozOIl但し、x +y−1が挙げられる。(E) Molybdates of each element such as zirconium and hafnium, and composite molybdates thereof such as ZrM
ozOa, H'fMOzOs, (Zr, Hy)
MozOIlHowever, x +y-1 is mentioned.
(F) ニオブ、タンタルの各元素のモリブデン酸塩
及びこれらの複合モリブデン酸塩
例えばNbJozO+4、Ta2M0:+Ot4、(N
b、 Ta、 )MO2014、但し、x +y =1
が挙げられる。(F) Molybdates of each element such as niobium and tantalum, and composite molybdates thereof such as NbJozO+4, Ta2M0:+Ot4, (N
b, Ta, )MO2014, however, x + y = 1
can be mentioned.
(G) マンガンのモリブデン酸塩 例えばMnMo0.が挙げられる。(G) Manganese molybdate For example, MnMo0. can be mentioned.
上記各群に属するモリブデン酸塩は、それぞれの元素の
酸化物と酸化モリブデン(Moss)の熱処理によって
合成することができるが、その前駆体を用いて熱処理す
ることにより合成することもできる。また、例えばアル
カリ土類金属のモリブデン酸塩は、アルカリ土類金属の
各々の金属酸化物の前駆体となる物質と酸化モリブデン
(MOO3)又はその前駆体とを所定のモル比で混合し
、熱処理することにより合成することができる0例えば
CaOの前駆体となる、例えば炭酸カルシウム(CaC
O*)又は水酸化カルシウム(Ca (OH) z)と
酸化モリブデン(MOO:l)又はその前駆体となる、
例えばモリブデン酸(IIZMOO4)とを所定モル比
混合し、熱処理する。Molybdates belonging to each of the above groups can be synthesized by heat treatment of oxides of the respective elements and molybdenum oxide (Moss), but they can also be synthesized by heat treatment using their precursors. For example, a molybdate of an alkaline earth metal can be prepared by mixing a substance serving as a precursor of each metal oxide of an alkaline earth metal with molybdenum oxide (MOO3) or its precursor at a predetermined molar ratio, and then heat-treating the mixture. For example, calcium carbonate (CaC
O*) or calcium hydroxide (Ca (OH) z) and molybdenum oxide (MOO:l) or its precursor,
For example, molybdic acid (IIZMOO4) is mixed in a predetermined molar ratio and heat treated.
このときの熱処理条件としては、600〜1000℃、
1〜3時間が挙げられ、。The heat treatment conditions at this time were 600 to 1000°C;
Examples include 1 to 3 hours.
本発明においては、上記モリブデン酸塩のほか炭化タン
グステン(WC)その地塊状粒子から針状粒子を成長さ
せて抵抗体とすることができるものが使用できる。In the present invention, in addition to the above-mentioned molybdate, tungsten carbide (WC), which can be made into a resistor by growing needle-like particles from its block-like particles, can be used.
本発明においては結合剤を用いることが好ましく、これ
にはガラスが半ばられが、このガラスとしては一般に知
られているガラスが用いられ、特定の組成のガラスに限
定されるものではないが、Pb20a 、B、kzOx
、5nO1s、 CdOのような酸化物は、これらを
含む抵抗体材料を非酸化性雰囲気中で焼成するときに還
元されて金属化することがあり、この金属は抵抗値を変
化させるので、このようなことが起こることが好ましく
ない場合にはこれらの酸化物を含有しないことが好まし
い。In the present invention, it is preferable to use a binder, and a glass is used for this, and a commonly known glass can be used, and the glass is not limited to a specific composition, but Pb20a ,B,kzOx
Oxides such as , 5nO1s, and CdO may be reduced and metallized when the resistor material containing them is fired in a non-oxidizing atmosphere, and this metal changes the resistance value. It is preferable not to contain these oxides in cases where it is undesirable for such occurrence to occur.
ガラス成分としては、5i02、B2O2、ZnO、C
aO1S「0、zrOtなどが好ましく、これらの酸化
物の組成比は、
SiO□12〜33 重量%
agos 20〜35 重量%
ZnO又はSr0 13〜33 重量%Ca0 10
〜25 重量%
Zr0t 15〜45 重量%
が好ましい。Glass components include 5i02, B2O2, ZnO, C
aO1S'0, zrOt, etc. are preferred, and the composition ratios of these oxides are: SiO□12-33 wt% agos 20-35 wt% ZnO or Sr0 13-33 wt%Ca0 10
~25% by weight Zr0t 15-45% by weight is preferred.
これら酸化物の組成物からガラスを製造するには、前記
組成比になるようにそれぞれの酸化物を秤量し、混合す
る。この混合物を坩堝に入れ、1200〜1500℃に
温度にて溶融した後、溶融液を例えば水中に投入し、急
冷させ、ガラス粗粉を得る。In order to manufacture glass from a composition of these oxides, the respective oxides are weighed and mixed to achieve the above composition ratio. This mixture is placed in a crucible and melted at a temperature of 1200 to 1500°C, and then the melt is poured into water, for example, and rapidly cooled to obtain coarse glass powder.
この粗粉を例えばボールミル、振動ミルなどの粉砕手段
を用いて所望の粒度(例えば10μm以下)になるまで
粉砕すると、ガラス粉末が得られる。Glass powder is obtained by pulverizing this coarse powder to a desired particle size (for example, 10 μm or less) using a pulverizing means such as a ball mill or a vibration mill.
前記は純粋の酸化物を混合して用いたが、これに限らず
結果的に各酸化物の混合物からなるガラスになれば良く
、各酸化物の前駆体をその一部又は全部に用い、これを
溶融してガラスにしても良い。例えばCaO(酸化カル
シウム)はCaC03(炭酸カルシウム) 、BzO*
(酸化硼素)はホウ酸(HJ(h)の熱処理により得ら
れるので、CaO、IhO*の一部又はその全部の代わ
りにそれぞれCaCQ、 、H!BO。In the above, a mixture of pure oxides was used, but the glass is not limited to this, as long as the result is a mixture of each oxide. It may be melted to make glass. For example, CaO (calcium oxide) is CaC03 (calcium carbonate), BzO*
(Boron oxide) can be obtained by heat treatment of boric acid (HJ(h), so CaCQ, , H!BO, respectively, can be used instead of part or all of CaO, IhO*, respectively.
を用いることができる。その他の成分の酸化物について
も同様である。can be used. The same applies to oxides of other components.
前記のようにして得られる前記元素群の元素のモリブデ
ン酸塩の塊状粒子、ガラス粉末は混合され、そのまま抵
抗体材料として用いても良いが、これを熱処理して粉砕
したものを抵抗体材料とすることがこれを焼成して得た
抵抗体の抵抗温度特性の上で好ましい、この熱処理温度
としては、800℃〜1200℃が好ましく、これより
外れると抵抗体材料を電気抵抗体に加工する各工程の作
業条件等による組成比の微妙な変動に対し、出来上がっ
た抵抗体の抵抗値が影響を受は易く、所望の抵抗値を安
定して得ることが難しい。この熱処理は非酸化性雰囲気
が望ましく、窒素ガスその他事活性ガス、あるいはこれ
らに水素ガスを含有させた混合ガスを用いることが好ま
しい。The lumpy particles of molybdate of the elements of the above element group and glass powder obtained as described above may be mixed and used as is as a resistor material, but they may be heat-treated and pulverized to be used as a resistor material. The heat treatment temperature is preferably 800°C to 1200°C, and if the temperature is outside this temperature range, the resistor material is processed into an electrical resistor. The resistance value of the finished resistor is easily affected by subtle fluctuations in the composition ratio due to process working conditions, etc., and it is difficult to stably obtain a desired resistance value. This heat treatment is preferably carried out in a non-oxidizing atmosphere, and it is preferable to use nitrogen gas or other active gas, or a mixed gas containing these gases and hydrogen gas.
このようにして得られた抵抗体材料粉末から固定チップ
抵抗器あるいは厚膜抵抗体のための抵抗体を作成するに
は、例えばセラミックグリーンシートにこれらの抵抗体
材料粉末を塗布し、焼成する。この際電気抵抗体本体と
なる例えば上記モリブデン酸塩等は球状、楕円、多角状
体等の塊状粒子にしてから使用することが好ましい、こ
れは焼成の過程で針状粒子が成長する過程でその根源の
母体が残ることが好ましいからである。この抵抗体本体
材料を塊状粒子にするには、ガラス等の結合剤を使用す
ることもできる。In order to create a resistor for a fixed chip resistor or a thick film resistor from the resistor material powder thus obtained, the resistor material powder is applied to, for example, a ceramic green sheet and fired. At this time, it is preferable to use the molybdate, etc., which will become the main body of the electrical resistor, after forming it into bulk particles such as spherical, elliptical, and polygonal bodies. This is because it is preferable that the original mother body remain. A binder such as glass may also be used to form the resistor body material into bulk particles.
この塊状粒子と例えばガラス等からなる抵抗体材料をシ
ルクスクリーン印刷等により塗布するためには、これら
抵抗体材料粉末にビヒクルが混合され塗液が調整される
。このビヒクルは、焼成の前段階で焼失できるようなも
のが好ましく、このためには有機物ビヒクル、すなわち
有機溶剤に樹脂を溶解又は分散させ、必要に応じて可塑
剤、分散剤等の各種添加側を加えたものが好ましい、こ
の有機溶剤にはプチルカービトールアセテート、プチル
カービトール、テレピン油などが挙げられ、樹脂として
はエチルセルローズ、ニトロセルローズ等のセルローズ
誘導体、その他の樹脂が挙げられる。In order to apply a resistor material made of the bulk particles and glass, for example, by silk screen printing or the like, a vehicle is mixed with the resistor material powder to prepare a coating liquid. This vehicle is preferably one that can be burned out in the pre-firing stage.For this purpose, the resin is dissolved or dispersed in an organic vehicle, that is, an organic solvent, and various additives such as plasticizers and dispersants are added as necessary. Examples of the organic solvent, which is preferably added, include butyl carbitol acetate, butyl carbitol, turpentine oil, etc., and examples of the resin include cellulose derivatives such as ethyl cellulose and nitrocellulose, and other resins.
この有機物ビヒクルと抵抗体材料粉末との使用割合は使
用する有機溶剤、樹脂等により変わるが、有機溶剤と樹
脂との使用割合は前者が20〜50重量%、後者が80
〜50重量%が適当である。これらの成分は例えば三本
ロールミル、らいかい器などの混合手段を用いてペース
ト状にされる。The usage ratio of this organic vehicle and the resistor material powder varies depending on the organic solvent, resin, etc. used, but the usage ratio of the organic solvent and resin is 20 to 50% by weight for the former and 80% for the latter.
~50% by weight is suitable. These components are made into a paste using a mixing means such as a three-roll mill or a sieve.
このようにして得られた抵抗体材料ペーストが基板に塗
布され、これがさらに後述の処理を施されて抵抗体が作
成されるが、この基板にはセラミックグリーンシートを
導体材料や抵抗体材料とともに焼成して作成するものの
みならず、予めセラミックグリーンシートを焼成し、こ
れにさらに抵抗体材料、導体材料を塗布した後焼成する
方法でも良い。これらは積層体を形成する場合にも適用
できる。The resistor material paste obtained in this way is applied to a substrate, which is further processed as described below to create a resistor. In addition to a method in which a ceramic green sheet is fired in advance, a resistor material and a conductor material are further applied thereto, and then fired. These can also be applied when forming a laminate.
前記セラミックグリーンシートとしては、例えば酸化ア
ルミニウム(A It z(h)35〜45IC量%、
酸化珪素(Sing)25〜35重景%、重量硼素(I
hOz) 10〜15重量%、酸化カルシウム(Cab
) 7〜13重量%、酸化マグネシウム(MgO) 7
〜10!量%等のセラミック構成成分の酸化物混合物を
有機物ビヒクルとボールミル等で混合したスラリーをド
クターブレード等によりシート化したものが挙げられる
。この際、前記元素群の凡庸のモリブデン酸塩にガラス
を併用しないどきは、前記セラミックグリーンシートに
ガラス分を多く含ませガラスを併用したと同様の効果を
出すようにしても良い、前記有機物ビヒクルには、アク
リル酸エステル等のアクリル樹脂、ポリビニルブチラー
ル等の樹脂、グリセリン、フタル酸ジエチル等の可塑剤
、カルボン酸塩等の分散剤、水、有機溶剤等の溶剤から
構成される。As the ceramic green sheet, for example, aluminum oxide (A It z (h) 35 to 45 IC amount %,
Silicon oxide (Sing) 25-35% heavy weight, boron (I)
hOz) 10-15% by weight, calcium oxide (Cab
) 7-13% by weight, magnesium oxide (MgO) 7
~10! For example, a slurry prepared by mixing a mixture of oxides of ceramic constituents with an organic vehicle in a ball mill or the like and forming the slurry into a sheet using a doctor blade or the like may be used. In this case, when glass is not used in combination with the mediocre molybdate of the element group, the ceramic green sheet may contain a large amount of glass to produce the same effect as when glass is used in combination. It is composed of acrylic resins such as acrylic acid esters, resins such as polyvinyl butyral, plasticizers such as glycerin and diethyl phthalate, dispersants such as carboxylic acid salts, and solvents such as water and organic solvents.
前記抵抗体材料ペーストはセラミックグリーンシートに
例えばシルクスクリーン印刷等の手段により塗布され、
乾燥後、400〜500℃で熱処理されて樹脂成分が分
解・燃焼されるのが好ましい。The resistor material paste is applied to a ceramic green sheet by means such as silk screen printing,
After drying, it is preferable that the resin component is decomposed and burned by heat treatment at 400 to 500°C.
この際、同時にNiあるいはCu等の卑金属導体材料あ
るいはAg又はAg−Pdの貴金属導体材料のペースト
も抵抗体材料ペースト塗膜と同様にセラミックグリーン
シートに塗布され、抵抗体材料ペーストの塗布物と同様
に処理される。At this time, a paste of a base metal conductor material such as Ni or Cu or a noble metal conductor material such as Ag or Ag-Pd is also applied to the ceramic green sheet in the same way as the resistor material paste coating film, and the paste is also applied to the ceramic green sheet in the same way as the resistor material paste coating. will be processed.
このNiあるいはCu等の卑金属導体材料あるいはAg
又はAg−Pdの貴金属導体材料のペースト組成物とし
ては、各々の金属粉末98〜85重量%にガラスフリフ
トを2〜15重量%添加したものが例示される。This base metal conductor material such as Ni or Cu or Ag
Alternatively, a paste composition of Ag-Pd noble metal conductor material is exemplified by adding 2 to 15 weight % of glass flift to 98 to 85 weight % of each metal powder.
このようにしてセラミックグリーンシートに抵抗体材料
及び/又は導体材料が組み込まれるが、固定チップ抵抗
器の場合にはこの未焼成基板の表面のみ、多層基板の厚
膜抵抗体の場合には前記抵抗体材料、導体材料を未焼成
状態で組み込んだものをさらに積層して所定の回路を構
成するようにしてから焼成する。この焼成により導体材
料及び/又は厚膜抵抗体材料を基板と同時に焼成体にす
ることができる。In this way, the resistor material and/or conductor material is incorporated into the ceramic green sheet, but in the case of a fixed chip resistor, only the surface of this unfired substrate is incorporated, and in the case of a thick film resistor of a multilayer substrate, the resistor material and/or the conductor material are incorporated into the ceramic green sheet. The body material and conductor material assembled in an unfired state are further laminated to form a predetermined circuit, and then fired. By this firing, the conductor material and/or the thick film resistor material can be made into a fired body at the same time as the substrate.
この場合、NiあるいはCu等の卑金属導体材料が導体
材料に用いられるときは、その酸化による高抵抗値化を
防止するために、非酸化性雰囲気中で焼成することが好
ましく、その焼成温度は、例えば800℃〜1100℃
、0.5時間〜2時間が例示される。非酸化性雰囲気と
しては、窒素ガスその他年活性ガス、これらに水素ガス
を含有させた混合ガスも用いられる。また、Ag又はA
、−Pdの貴金属導体材料を用いるときは空気等の酸化
性雰囲気中で焼成することもできる。In this case, when a base metal conductor material such as Ni or Cu is used as the conductor material, it is preferable to sinter it in a non-oxidizing atmosphere in order to prevent the resistance value from increasing due to oxidation, and the sintering temperature is as follows: For example, 800℃~1100℃
, 0.5 hours to 2 hours. As the non-oxidizing atmosphere, nitrogen gas, other active gases, and mixed gases containing these gases and hydrogen gas may also be used. Also, Ag or A
, -Pd can be fired in an oxidizing atmosphere such as air.
前記のようにして導体及び/又は抵抗体を組み込んだ回
路配線基板が出来上がるが、焼成基板と導体の間は勿論
のこと、焼成基板と抵抗体との間にも焼成に伴ってクラ
ンク、歪み、ふくれ等を生じることがないとともに、抵
抗体は25℃で10〜90%相対湿度変化に対して抵抗
値変化が±0.1%以下であり、高温高湿度雰囲気中に
1000時間以上放置されてもその抵抗値が±2%以内
の変化に抑制される。これは抵抗体が導体及び焼成基板
と良くマツチングするためと、前記元素群の元素のモリ
ブデン酸塩とガラスの焼成体からなる抵抗体の独特の耐
湿性に基づくものと考えられるが詳細は明らかでない。A circuit wiring board incorporating a conductor and/or a resistor is completed as described above, but there may be cracks, distortions, etc. not only between the fired board and the conductor but also between the fired board and the resistor due to firing. In addition to not causing any blistering, the resistance value of the resistor changes by ±0.1% or less against a relative humidity change of 10 to 90% at 25℃, and can be left in a high temperature and high humidity atmosphere for more than 1000 hours. However, the resistance value is suppressed to change within ±2%. This is thought to be due to the resistor's good matching with the conductor and fired substrate, and the unique moisture resistance of the resistor, which is made of a molybdate of an element from the above element group and a fired glass body, but the details are not clear. .
なお、XwA回折分析により前記抵抗体中に使用した元
素のモリブデン酸塩を認めることができる。また、塊状
粒子と針状粒子を透過型電子顕微鏡により認めることが
できる。Incidentally, molybdate of the element used in the resistor can be recognized by XwA diffraction analysis. Furthermore, lumpy particles and needle-like particles can be observed using a transmission electron microscope.
本発明においては、上記の如く選択した元素のモリブデ
ン酸塩を用いても良いが、これらのモリブデン酸塩の代
わりに熱処理によりこれらのモリブデン酸塩となる前駆
体を一部又は全部用いることもできる。これらのいずれ
の場合も当該モリブデン酸塩の塊状粒子をガラスと混合
して熱処理したものを粉砕し、抵抗体材料とすることが
好ましいが、この熱処理を行わず上述の有機物ビヒクル
等と混合して作成したペーストを例えばグリーンセラミ
ックシートに塗布してから、有機物除去の加熱処理を経
て焼成し、直接抵抗体を作成することもできる。In the present invention, molybdates of the elements selected as described above may be used, but instead of these molybdates, some or all of the precursors that become these molybdates by heat treatment can also be used. . In any of these cases, it is preferable to mix the bulk particles of the molybdate with glass, heat treat it, and then pulverize it to make a resistor material. It is also possible to directly create a resistor by applying the created paste onto a green ceramic sheet, for example, and then firing it through a heat treatment to remove organic matter.
また、ガラスはこれを構成する酸化物の混合材料が選択
した元素のモリブデン酸塩とともに結果的に焼成される
状態におかれれば良く、これらの酸化物の前駆体を選択
した元素のモリブデン酸塩及び/又はその前駆体ととも
にこの酸化物の一部又は全部を上述したようにペースト
状態にし、これを基板に塗布して有機物の燃焼、その後
の焼成のいずれかの過程で上記のガラス成分からなるガ
ラスになり、これと選択した元素のモリブデン酸塩及び
/又はその前駆体と焼成されることにより抵抗体を作製
できるものであれば良い0例えば、ガラスの材料の成分
であるCaO(酸化カルシウム)はCaC0+(炭酸カ
ルシウム)の加熱、Btu3(酸化硼素)はホウ酸(H
gBO*)の加熱から得られるので、CaO、Btus
の一部又は全部の代わりにそれぞれCaCOx 、II
JOsを用いることができる。本発明における抵抗体材
料とはその処理の過程で結果的に選択された7:、!の
モリブデン酸塩とガラスとを主成分にするものであれば
良い。Additionally, the glass may be placed in a state where the mixed material of the oxides constituting it is eventually fired together with the molybdates of the selected elements, and the precursors of these oxides are combined with the molybdates of the selected elements. A part or all of this oxide together with salt and/or its precursor is made into a paste state as described above, and this is applied to a substrate and the above glass components are removed by burning the organic material and then firing. Any material that can be used as long as it becomes a glass that can produce a resistor by firing it with a molybdate of the selected element and/or its precursor.For example, CaO (calcium oxide ) is heating CaC0+ (calcium carbonate), Btu3 (boron oxide) is heating boric acid (H
gBO*), so CaO, Btus
CaCOx, II instead of some or all of
JOs can be used. The resistor material in the present invention is selected as a result of the processing process 7:,! Any material whose main components are molybdate and glass may be used.
上記はモリブデン酸塩等を抵抗体材料に使用したが、電
気抵抗体の抵抗値の温度変化係数を小さくするためにア
ルカリ土類金属等の弗化物を併用しても良く、またさら
に抵抗体材料の塗料にアルカリ土類金属等の炭酸塩を併
用しても良い。In the above example, molybdate or the like is used as the resistor material, but in order to reduce the temperature change coefficient of the resistance value of the electrical resistor, fluorides such as alkaline earth metals may also be used in combination. Carbonates such as alkaline earth metals may be used in combination with the paint.
実施例 次に本発明の詳細な説明する。Example Next, the present invention will be explained in detail.
酸化物に換算して表1に示される組成になるように各成
分を秤量し、混合した。Each component was weighed and mixed to have the composition shown in Table 1 in terms of oxide.
表1 表中、単位は重量%。Table 1 In the table, the unit is weight%.
ガラスA、ガラスBのそれぞれの混合物を各別にアルミ
ナ坩堝中で1400℃で溶融し、その溶融液を水中に投
入し、急冷させた。この急冷物を取り出してエタノール
とともにボットミルの中に入れ、アルミナボールで24
時間粉砕し、粒径10μ鋼以下のガラス粉末を得た。Each of the mixtures of Glass A and Glass B was separately melted in an alumina crucible at 1400°C, and the melt was poured into water and rapidly cooled. Take out this quenched material, put it in a bot mill with ethanol, and use an alumina ball for 24 hours.
The glass powder was pulverized for a period of time to obtain a glass powder with a particle size of 10 μm or less.
実施例1
酸化モリブデンと炭酸マグネシウムをモル比が1になる
ように混合し、700℃で1時間熱処理してマグネシウ
ムのモリブデン酸塩を得た。Example 1 Molybdenum oxide and magnesium carbonate were mixed at a molar ratio of 1, and heat treated at 700° C. for 1 hour to obtain a magnesium molybdate.
次に前記で得たガラスAとマグネシウムのモリブデン酸
塩を下記の組成で混合した。Next, Glass A obtained above and magnesium molybdate were mixed in the following composition.
MgMo0t 30重量部
ガラスA 70重量部
上記各試料を窒素(Nり 9B、5 vo1%、水素(
uz)1.5 vo1%のガス雰囲気中、1000℃、
1時間熱処理し、しかる後にエタノールとともにポット
ミルにて粉砕し、乾燥して10μ…以下のガラスとマグ
ネシウムのモリブデン酸塩の熱処理粉末の抵抗体材料を
得た。MgMo0t 30 parts by weight Glass A 70 parts by weight
uz) 1000℃ in a 1.5 VO1% gas atmosphere,
The resultant was heat-treated for 1 hour, then ground with ethanol in a pot mill, and dried to obtain a resistor material of heat-treated powder of glass and magnesium molybdate having a size of 10 μm or less.
次に上記の抵抗体材料粉末100重量部に有機物ビヒク
ル(プチルカービトール90重1部、エチルセルローズ
10重量部)25重量部を加え、ロールミルで混合し、
抵抗体材料ペーストを得た。Next, 25 parts by weight of an organic vehicle (1 part by weight of butyl carbitol 90 parts, 10 parts by weight of ethyl cellulose) was added to 100 parts by weight of the above resistor material powder, and mixed in a roll mill.
A resistor material paste was obtained.
一方、A l zoz 40.0重量%、5iOz35
.0重量%、BZOff13.0重量%、CaO7,0
重量%、Mg05.0重量%からなるセラミック原料粉
末100重量部にポリビニルブチテニル8重量部、フタ
ル酸ジエチル8重量部、オレイン酸0.5重量部、アセ
トン103tt部、イソプルピルアルコール20重量部
及びメチルエチルケトン20重量部を加えてボールミル
により混合してスラリーを作製し、脱泡処理した後にド
クターブレード法により厚さ200μmの長尺のセラミ
ックグリーンシートを作製した。このセラミックグリー
ンシートから縦9龍横9Mのグリーンシート片と、縦6
鶴横9鶴のグリーンシート片とを切り抜いた。On the other hand, Al zoz 40.0% by weight, 5iOz35
.. 0% by weight, BZOff 13.0% by weight, CaO7.0
% by weight, 100 parts by weight of ceramic raw powder consisting of 05.0% by weight of Mg, 8 parts by weight of polyvinylbutytenyl, 8 parts by weight of diethyl phthalate, 0.5 parts by weight of oleic acid, 103 tt parts of acetone, and 20 parts by weight of isopropyl alcohol. and 20 parts by weight of methyl ethyl ketone were added and mixed in a ball mill to prepare a slurry, and after defoaming treatment, a long ceramic green sheet with a thickness of 200 μm was prepared using a doctor blade method. From this ceramic green sheet, a green sheet piece with length 9x and width 9M and length 6
I cut out 9 pieces of Tsuruyoko green sheet.
次に第1図に示す如く、上記の縦9鶴横9fiのグリー
ンシート片l上に、銅粉末95重量部、ガラスフリフト
5重量部に有機物ビヒクルとしてブチルカルピトール2
0重量部、エチルセルロース5重量部を加え、これらを
三本ロールミルにより混合した導体材料ペーストをシル
クスクリーン印刷し、125℃、10分間乾燥させて導
体材料塗膜2を形成した0次いで、上記で得た抵抗体材
料ペーストを上記グリーンシート片1に上記と同様にシ
ルクスクリーン印刷し、125℃、10分間乾燥させて
厚膜抵抗体用塗膜3を形成した。Next, as shown in FIG. 1, 95 parts by weight of copper powder, 5 parts by weight of glass lift, and 2 parts of butyl calpitol as an organic vehicle were placed on the above-mentioned green sheet piece l of 9 by 9 fi.
A conductive material paste obtained by adding 0 parts by weight and 5 parts by weight of ethyl cellulose and mixing them using a three-roll mill was silk screen printed and dried at 125° C. for 10 minutes to form a conductive material coating film 2. The resulting resistor material paste was silk screen printed on the green sheet piece 1 in the same manner as described above, and dried at 125° C. for 10 minutes to form a thick film resistor coating 3.
次にグリーンシート片l上に前記で得た縦6fl横9關
のグリーンシート片4を図示鎖線で示すように重ね、1
00℃、150Kg/cjで熱圧着する0次いで、これ
を大気等の酸化性雰囲気中、400〜500℃で加熱し
てグリーンシート片l、4、導体材料塗膜2、抵抗体材
料塗膜3のそれぞれの残留有機物を分解・燃焼させる。Next, the green sheet piece 4 of 6 fl length and 9 width width obtained above is stacked on top of the green sheet piece L as shown by the chain line in the figure.
00℃, thermocompression bonded at 150Kg/cj. Next, this is heated at 400 to 500℃ in an oxidizing atmosphere such as air to form green sheet pieces 1, 4, conductor material coating 2, and resistor material coating 3. Decompose and burn each residual organic matter.
このようにして有機物を除去した後、Nオ98.5vo
1%、Ht 1.5 vo1%の混合ガス中で、950
℃、1時間焼成し、第2図に示すようにグリーンシート
片1の焼成体の磁器層1a、グリーンシート片4の焼成
体の磁器層4aの間に導体材料塗膜2の焼成体の厚膜導
体2a、抵抗体材料塗膜3の焼成体の厚膜抵抗体3aを
有する多層セラミック基板を完成させた。この多層セラ
ミック基板には、後述する第4図、第5図に示されるよ
うな反り、ふくれは見られなかった。After removing organic matter in this way, 98.5 vol of NO
950 in a mixed gas of 1%, Ht 1.5 vol.
℃ for 1 hour, and as shown in FIG. A multilayer ceramic substrate having a thick film resistor 3a as a fired body of a film conductor 2a and a resistor material coating film 3 was completed. In this multilayer ceramic substrate, no warping or blistering as shown in FIGS. 4 and 5, which will be described later, was observed.
このようにして得られた焼成体の多層セラミック基板を
層方向に研磨して抵抗体層を露出させ、この露出した抵
抗体層をX線回折(Cu Kα線)により分析した。得
られた結果を第6図に示す。また、第7図に透過型電子
顕微鏡を用いて撮影した写真を示す、これには針状粒子
と左側の濃い影の部分のマグネシウムのモリブデン酸塩
と右側の薄い影の部分のガラスが撮影されている。なお
、この透過型電子顕微鏡写真用試料は、厚膜抵抗体を有
する多層セラミック基板を断面方向に幅200μIの帯
状に切断し、これをさらに厚さ約20μ−まで研磨した
後、イオンミリング装置により薄片化して作製した。The multilayer ceramic substrate of the fired body thus obtained was polished in the layer direction to expose the resistor layer, and the exposed resistor layer was analyzed by X-ray diffraction (Cu Kα ray). The results obtained are shown in FIG. In addition, Figure 7 shows a photograph taken using a transmission electron microscope, which shows the acicular particles, the magnesium molybdate in the darkly shaded area on the left, and the glass in the lightly shaded area on the right. ing. This sample for transmission electron microscopy was prepared by cutting a multilayer ceramic substrate with a thick film resistor into strips with a width of 200 μI in the cross-sectional direction, polishing them to a thickness of about 20 μI, and then cutting them using an ion milling device. It was made into thin sections.
次にこの多層セラミック基板3aの25℃における抵抗
値(Ris)と、125℃に加熱したときの抵抗値(R
ags)をデジタルマルチメータで測定し、抵抗の温度
係数(TCR)を次式により求めた。Next, the resistance value (Ris) of this multilayer ceramic substrate 3a at 25°C and the resistance value (R
ags) was measured using a digital multimeter, and the temperature coefficient of resistance (TCR) was determined using the following equation.
上記のR□の測定抵抗値は1B、5 X 10’Ω、T
CRの計算値は−831ppa+/’Cであった。The measured resistance value of R□ above is 1B, 5 x 10'Ω, T
The calculated value of CR was -831 ppa+/'C.
また、上記で得られた多層セラミック基板を60℃、9
5%相対湿度のもとに1000時間放置した後の25℃
の抵抗値を測定し、その変化率を求めたところ±2%以
内であった。In addition, the multilayer ceramic substrate obtained above was heated at 60°C for 9
25℃ after 1000 hours under 5% relative humidity
The resistance value was measured and the rate of change was found to be within ±2%.
実施例2
実施例1竪おいて、MgMo0.の代わりにMgzMo
=0.1を用い、ガラスAの代わりにガラスBを使用し
た以外は同様にして多層セラミック基板を作成し、これ
について実施例1と同様の項目について測定値及び計算
値を求めたところ、Rts ”=12.9X10”Ω、
TCR−−744ppta/’C1Rtsの変化率は±
2%以内であった。・
また、図示□省略したが、実施例1と同様にMggMO
sOt 1を確認し、透過型顕微鏡写真から塊状粒子と
針状粒子ゐびガラスを確認した。Example 2 Example 1 MgMo0. MgzMo instead of
A multilayer ceramic substrate was prepared in the same manner except that glass B was used instead of glass A, and measured and calculated values were obtained for the same items as in Example 1. ”=12.9X10”Ω,
The rate of change in TCR--744ppta/'C1Rts is ±
It was within 2%.・ Also, although not shown in the figure, MggMO
sOt 1 was confirmed, and lumpy particles, acicular particles, and glass were confirmed from the transmission micrograph.
比較例1 (Most、−TaSizガラス系抵抗体材
料)MoSiz 16重量部、Tacit 9重量部の
混谷物を真空中1400℃で加熱し、その生成物をエタ
ノールとともにポットミル中アルミナボールで24時間
粉砕し、乾燥させて10μ鋼以下の微粉末を得た。この
ようにして得た微粉末25重量部に対し、Ba02B2
01、MgO、CaO、SiO2からなるガラスフリフ
ト75重量部と、有機物ビヒクル(ブチルカルピトール
20重量部、エチルセルロース5重量部)25重量部と
を加え、ロールミルで混合して抵抗体材料ペーストを得
た。Comparative Example 1 (Most, -TaSiz glass resistor material) A mixture of 16 parts by weight of MoSiz and 9 parts by weight of Tacit was heated at 1400°C in vacuum, and the product was ground with ethanol in an alumina ball in a pot mill for 24 hours. , and dried to obtain a fine powder of less than 10μ steel. For 25 parts by weight of the fine powder thus obtained, Ba02B2
01. 75 parts by weight of a glass lift consisting of MgO, CaO, and SiO2 and 25 parts by weight of an organic vehicle (20 parts by weight of butyl calpitol, 5 parts by weight of ethyl cellulose) were added and mixed in a roll mill to obtain a resistor material paste. Ta.
この抵抗体材料ペーストを用いた以外は実施例と同様に
して多層セラミック基板を得た。A multilayer ceramic substrate was obtained in the same manner as in the example except that this resistor material paste was used.
その結果、セラミックグリーンシートに抵抗体材料塗膜
を形成し、これを加熱処理して有機物を除去した後に同
時焼成して得たものは、両者の焼成体に膨張率、収縮率
が異なることにより第3図に示すように反りが見られ、
また、Mo5iz 、Ta5izの分解反応でSiO□
気体が発生することにより第4図に示すようにふくれが
生じ、実用に供することができなかった。なお、lla
は上記磁器層1a、14aは上記磁器N4a、13aは
上記厚膜抵抗体3aにそれぞれ対応する磁器層、厚膜抵
抗体である。As a result, the ceramic green sheet was coated with a resistor material coating, heat-treated to remove organic matter, and then fired simultaneously. As shown in Figure 3, warpage is observed,
In addition, SiO□ is produced by the decomposition reaction of Mo5iz and Ta5iz.
Due to the generation of gas, blistering occurred as shown in FIG. 4, making it impossible to put it to practical use. In addition, lla
The ceramic layers 1a and 14a are the ceramic layers N4a and 13a are the thick film resistors corresponding to the thick film resistor 3a, respectively.
比較例2(MoSix−11aFzガラス系抵抗体材料
)MoSit 7O1i量部、BaFz 20重量部と
、Sing、ZnO、Zr0z、CaO1AI!gos
からなるガラスフリフト10重量部とをボールミルで混
合し、得られた粉末をアルゴン(Ar)ガス雰囲気中1
200℃で熱処理した後、これをエタノールとともにポ
ットミル中アルミナボールで24時間粉砕し、乾燥させ
て10μm以下の微粉末を得た。Comparative Example 2 (MoSix-11aFz glass resistor material) MoSit 7O1i parts, BaFz 20 weight parts, Sing, ZnO, Zr0z, CaO1AI! gos
The resulting powder was mixed with 10 parts by weight of glass lift consisting of
After heat-treating at 200°C, this was pulverized with ethanol using an alumina ball in a pot mill for 24 hours, and dried to obtain a fine powder of 10 μm or less.
この抵抗体材料ペーストを用いた以外は実施例1と同様
にして多層セラミック基板を得た。この多層セラミック
基板の厚膜抵抗体についても実施例1′&同様にして求
めたR、、 、TCP及び抵抗値の変化率を表2に示す
。A multilayer ceramic substrate was obtained in the same manner as in Example 1 except that this resistor material paste was used. For the thick film resistor of this multilayer ceramic substrate, R, , , TCP and the rate of change in resistance value obtained in the same manner as in Example 1' are shown in Table 2.
表2
上記結果より、実施例の多層セラミック基板はいずれも
反り、ふくれがなく、抵抗値の変化率も±2%以内であ
るのに対し、比較例1の多層セラミック基板は反りが見
られ、比較例2の多層セラミンク基板は抵抗値の変化率
が4倍も大きいことがわかる。Table 2 From the above results, the multilayer ceramic substrates of Examples have no warping or blistering, and the rate of change in resistance value is within ±2%, whereas the multilayer ceramic substrate of Comparative Example 1 has warpage. It can be seen that the multilayer ceramic substrate of Comparative Example 2 has a rate of change in resistance value that is four times larger.
発明の効果
本発明によれば、塊状粒子に針状粒子を付着又は近接さ
せた焼成体を有する電気抵抗体を提供できるので、その
電気抵抗体本体材料の塊状粒子を含有する抵抗体材料を
例えば卑金属導体材料とともに非酸化性雰囲気中でセラ
ミックグリ−シートとともに焼成することにより抵抗体
を形成するようにすると、塊状粒子表面から針状粒子を
成長させることができる。また、焼成することにより焼
成体に反りやふくれが生じるようなことはなく、また、
抵抗体の特に高湿度下の経時変化を小さくできる。Effects of the Invention According to the present invention, it is possible to provide an electrical resistor having a fired body in which acicular particles are attached to or in close proximity to lump particles. When a resistor is formed by firing a base metal conductor material together with a ceramic green sheet in a non-oxidizing atmosphere, acicular particles can be grown from the surface of the lump particles. In addition, the fired product does not warp or bulge during firing, and
Changes in the resistor over time, especially under high humidity conditions, can be reduced.
これにより、抵抗体を組み込んだ回路基板の小型化、コ
ストの低減の両方の要求を満たし、回路基板の一層の性
能の向上に寄与できる。This satisfies the demands for both miniaturization and cost reduction of a circuit board incorporating a resistor, and contributes to further improvement in the performance of the circuit board.
第1図は本発明の電気抵抗体の組織の模式図、第2図は
本発明の電気抵抗体を製造するときの焼成前の抵抗体材
料塗膜と導体材料塗膜を基板に形成し、多層構造にしよ
うとする状態の一例を示す図、第3図はその焼成体の断
面図、第4図は従来の抵抗体材料を使用して多層構造に
したときの焼成体の断面図、第5図はさらにその焼成体
にガスが発生した状態を示す説明図、第6図は本発明の
実施例1の電気抵抗体^グネシウムのモリブデン酸塩を
検出したときのX線回折図、第7図はこの電気抵抗体の
組織を示す透過顕微鏡写真である。
図中、aはガラス、bは塊状粒子、Cは針状粒子、1,
4はグリーンシート片、2は導体材料塗膜、3は抵抗体
材料塗膜、1a、4aは磁器層、2aは厚膜導体、3a
は厚膜抵抗体である。
昭和62年04月30日FIG. 1 is a schematic diagram of the structure of the electrical resistor of the present invention, and FIG. 2 is a diagram showing the formation of a resistor material coating film and a conductive material coating film on a substrate before firing when manufacturing the electrical resistor of the present invention, Figure 3 is a cross-sectional view of the fired body, and Figure 4 is a cross-sectional view of the fired body when a multilayer structure is formed using conventional resistor material. Fig. 5 is an explanatory diagram showing a state in which gas is further generated in the fired body, Fig. 6 is an X-ray diffraction diagram when molybdate of gnesium is detected in the electrical resistor of Example 1 of the present invention, and Fig. 7 is an explanatory diagram showing a state in which gas is generated in the fired body. The figure is a transmission micrograph showing the structure of this electrical resistor. In the figure, a is glass, b is lumpy particles, C is needle-like particles, 1,
4 is a green sheet piece, 2 is a conductor material coating, 3 is a resistor material coating, 1a, 4a are ceramic layers, 2a is a thick film conductor, 3a
is a thick film resistor. April 30, 1985
Claims (5)
子の近傍に存在する針状粒子と、ガラス層を含有する焼
成体を有することを特徴とする電気抵抗体。(1) An electrical resistor characterized by having a fired body containing lumpy particles, acicular particles attached to or in the vicinity of the lumpy particles, and a glass layer.
子の近傍に存在する針状粒子とがそれぞれ導電性の粒子
であることを特徴とする特許請求の範囲第1項記載の電
気抵抗体。(2) The electrical resistor according to claim 1, wherein the lumpy particles and the acicular particles attached to or in the vicinity of the lumpy particles are electrically conductive particles. .
れる少なくとも1つの群の内の少なくとも1種のモリブ
デン酸塩を含有し、針状粒子が当該モリブデン酸塩の還
元生成物を含有することを特徴とする特許請求の範囲第
1項記載の電気抵抗体。 (A)アルカリ土類金属のモリブデン酸塩 (B)亜鉛のモリブデン酸塩 (C)Y、La、Ce、Pr、Nd、Sm、Eu、Gd
、Tb、Dy、Ho、Er、Tm、Yb、Luの各元素
のモリブデン酸塩及びこれらの元素の内の複数元素の複
合モリブデン酸塩 (D)アルミニウムのモリブデン酸塩 (E)ジルコニウム、ハフニウムの各元素のモリブデン
酸塩及びこれらの複合モリブデン酸塩 (F)ニオブ、タンタルの各元素のモリブデン酸塩及び
これらの複合モリブデン酸塩 (G)マンガンのモリブデン酸塩(3) The lumpy particles contain at least one type of molybdate selected from the following groups (A) to (G), and the acicular particles contain a reduction product of the molybdate. The electrical resistor according to claim 1, characterized in that it contains: (A) Alkaline earth metal molybdate (B) Zinc molybdate (C) Y, La, Ce, Pr, Nd, Sm, Eu, Gd
, Tb, Dy, Ho, Er, Tm, Yb, Lu, and composite molybdates of multiple elements among these elements (D) Molybdates of aluminum (E) Zirconium, hafnium molybdates Molybdates of each element and their composite molybdates (F) Molybdates of each element of niobium and tantalum and their composite molybdates (G) Molybdates of manganese
の該当するモリブデン酸塩及びその前駆体の内の少なく
とも一種を主成分に含有する抵抗体材料から焼成される
ことを特徴とする特許請求の範囲第1項記載の電気抵抗
体。(4) The bulk particles and acicular particles are fired from a resistor material containing as a main component at least one of molybdates and their precursors corresponding to groups (A) to (G). An electrical resistor according to claim 1.
する塊状粒子を非酸化性雰囲気中で焼成してこの塊状粒
子表面を還元して針状粒子の還元生成物をこの塊状粒子
に付着又はこの塊状粒子近傍に存在させる工程を有する
ことを特徴とする電気抵抗体の製造方法。(5) The bulk particles containing the resistor body material constituting the electrical resistor body are fired in a non-oxidizing atmosphere, the surface of the bulk particles is reduced, and the reduction product of the acicular particles is attached to the bulk particles. Or, a method for manufacturing an electrical resistor, comprising the step of making the bulk particles exist near the lump particles.
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62104416A JPS63272005A (en) | 1987-04-30 | 1987-04-30 | Electric resistor and manufacture thereof |
| DE8787311461T DE3785750T2 (en) | 1987-02-28 | 1987-12-24 | ELECTRICAL RESISTANCE, ELECTRICAL RESISTANCE PASTE AND PRODUCTION METHOD. |
| EP87311461A EP0280819B1 (en) | 1987-02-28 | 1987-12-24 | Electrical resistors, electrical resistors paste and method for making the same |
| US07/138,439 US4970027A (en) | 1987-02-28 | 1987-12-28 | Electrical resistors, electrical resistor paste and method for making the same |
| US07/457,291 US5098611A (en) | 1987-02-28 | 1989-12-26 | Electrical resistors, electrical resistor paste and method for making the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62104416A JPS63272005A (en) | 1987-04-30 | 1987-04-30 | Electric resistor and manufacture thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63272005A true JPS63272005A (en) | 1988-11-09 |
| JPH0553282B2 JPH0553282B2 (en) | 1993-08-09 |
Family
ID=14380087
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62104416A Granted JPS63272005A (en) | 1987-02-28 | 1987-04-30 | Electric resistor and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63272005A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| RU2755344C1 (en) * | 2020-10-13 | 2021-09-15 | Общество с ограниченной ответственностью "ФОКОН" | Method for obtaining thick-film structures for thermal power generators |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6292407A (en) * | 1985-10-18 | 1987-04-27 | 太陽誘電株式会社 | Resistance material |
-
1987
- 1987-04-30 JP JP62104416A patent/JPS63272005A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6292407A (en) * | 1985-10-18 | 1987-04-27 | 太陽誘電株式会社 | Resistance material |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| RU2755344C1 (en) * | 2020-10-13 | 2021-09-15 | Общество с ограниченной ответственностью "ФОКОН" | Method for obtaining thick-film structures for thermal power generators |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0553282B2 (en) | 1993-08-09 |
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