JPS63274682A - 酸化物超電導材料の作製方法 - Google Patents

酸化物超電導材料の作製方法

Info

Publication number: JPS63274682A
Authority: JP; Japan
Prior art keywords: film; oxide superconducting; superconducting material; added; oxide
Prior art date: 1987-05-06
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Granted

Application number

JP62111614A

Other languages

English (en)

Japanese (ja)

Other versions

JPH0440284B2 (fr

Inventor

Shunpei Yamazaki

舜平山崎

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Semiconductor Energy Laboratory Co Ltd

Original Assignee

Semiconductor Energy Laboratory Co Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1987-05-06

Filing date

1987-05-06

Publication date

1988-11-11

1987-05-06 Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd

1987-05-06 Priority to JP62111614A priority Critical patent/JPS63274682A/ja

1988-05-05 Priority to US07/190,352 priority patent/US4916116A/en

1988-11-11 Publication of JPS63274682A publication Critical patent/JPS63274682A/ja

1992-07-02 Publication of JPH0440284B2 publication Critical patent/JPH0440284B2/ja

1993-02-16 Priority to US08/022,440 priority patent/US5364835A/en

Status Granted legal-status Critical Current

Links

239000000463 material Substances 0.000 title claims abstract description 59
229910052736 halogen Inorganic materials 0.000 claims abstract description 19
150000002367 halogens Chemical class 0.000 claims abstract description 19
238000010438 heat treatment Methods 0.000 claims abstract description 6
239000011737 fluorine Substances 0.000 claims description 19
229910052731 fluorine Inorganic materials 0.000 claims description 19
238000000034 method Methods 0.000 claims description 11
238000004519 manufacturing process Methods 0.000 claims description 8
238000005468 ion implantation Methods 0.000 claims description 6
PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims 1
239000001301 oxygen Substances 0.000 abstract description 34
229910052760 oxygen Inorganic materials 0.000 abstract description 34
QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 33
229910052751 metal Inorganic materials 0.000 abstract description 7
239000002184 metal Substances 0.000 abstract description 7
239000004065 semiconductor Substances 0.000 abstract description 4
229910052581 Si3N4 Inorganic materials 0.000 abstract description 3
HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract description 3
230000000903 blocking effect Effects 0.000 abstract description 2
230000001590 oxidative effect Effects 0.000 abstract 1
239000010408 film Substances 0.000 description 19
YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 18
230000006866 deterioration Effects 0.000 description 6
239000010409 thin film Substances 0.000 description 6
IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
239000011248 coating agent Substances 0.000 description 3
238000000576 coating method Methods 0.000 description 3
239000007788 liquid Substances 0.000 description 3
230000003647 oxidation Effects 0.000 description 3
238000007254 oxidation reaction Methods 0.000 description 3
230000000737 periodic effect Effects 0.000 description 3
239000007787 solid Substances 0.000 description 3
RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 2
239000005751 Copper oxide Substances 0.000 description 2
GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Chemical compound [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 description 2
239000011575 calcium Substances 0.000 description 2
239000004020 conductor Substances 0.000 description 2
229910052802 copper Inorganic materials 0.000 description 2
239000010949 copper Substances 0.000 description 2
229910000431 copper oxide Inorganic materials 0.000 description 2
238000009792 diffusion process Methods 0.000 description 2
238000009826 distribution Methods 0.000 description 2
GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
239000011777 magnesium Substances 0.000 description 2
150000002739 metals Chemical class 0.000 description 2
229910052757 nitrogen Inorganic materials 0.000 description 2
TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 2
229910052710 silicon Inorganic materials 0.000 description 2
239000010703 silicon Substances 0.000 description 2
239000007858 starting material Substances 0.000 description 2
229910001936 tantalum oxide Inorganic materials 0.000 description 2
OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
SIKJAQJRHWYJAI-UHFFFAOYSA-O 1H-indol-1-ium Chemical compound C1=CC=C2[NH2+]C=CC2=C1 SIKJAQJRHWYJAI-UHFFFAOYSA-O 0.000 description 1
ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
102100033806 Alpha-protein kinase 3 Human genes 0.000 description 1
101710082399 Alpha-protein kinase 3 Proteins 0.000 description 1
WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical class [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
229910052692 Dysprosium Inorganic materials 0.000 description 1
229910052691 Erbium Inorganic materials 0.000 description 1
229910052693 Europium Inorganic materials 0.000 description 1
229910052688 Gadolinium Inorganic materials 0.000 description 1
229910052689 Holmium Inorganic materials 0.000 description 1
229910052765 Lutetium Inorganic materials 0.000 description 1
FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
229910000577 Silicon-germanium Chemical group 0.000 description 1
229910052771 Terbium Inorganic materials 0.000 description 1
229910052775 Thulium Inorganic materials 0.000 description 1
RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
229910052769 Ytterbium Inorganic materials 0.000 description 1
230000001133 acceleration Effects 0.000 description 1
229910052768 actinide Inorganic materials 0.000 description 1
150000001255 actinides Chemical class 0.000 description 1
239000000654 additive Substances 0.000 description 1
239000003570 air Substances 0.000 description 1
229910052782 aluminium Inorganic materials 0.000 description 1
XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
229910052788 barium Inorganic materials 0.000 description 1
DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
AYJRCSIUFZENHW-DEQYMQKBSA-L barium(2+);oxomethanediolate Chemical compound [Ba+2].[O-][14C]([O-])=O AYJRCSIUFZENHW-DEQYMQKBSA-L 0.000 description 1
229910052790 beryllium Inorganic materials 0.000 description 1
ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
229910052794 bromium Inorganic materials 0.000 description 1
229910052791 calcium Inorganic materials 0.000 description 1
238000006243 chemical reaction Methods 0.000 description 1
150000001875 compounds Chemical class 0.000 description 1
PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
239000013078 crystal Substances 0.000 description 1
230000002950 deficient Effects 0.000 description 1
238000007872 degassing Methods 0.000 description 1
238000006392 deoxygenation reaction Methods 0.000 description 1
KBQHZAAAGSGFKK-UHFFFAOYSA-N dysprosium atom Chemical compound [Dy] KBQHZAAAGSGFKK-UHFFFAOYSA-N 0.000 description 1
230000000694 effects Effects 0.000 description 1
UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 description 1
230000001856 erectile effect Effects 0.000 description 1
OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 description 1
150000002222 fluorine compounds Chemical class 0.000 description 1
UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 description 1
239000007789 gas Substances 0.000 description 1
229910052732 germanium Inorganic materials 0.000 description 1
YBMRDBCBODYGJE-UHFFFAOYSA-N germanium oxide Inorganic materials O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 description 1
239000001307 helium Substances 0.000 description 1
229910052734 helium Inorganic materials 0.000 description 1
SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
KJZYNXUDTRRSPN-UHFFFAOYSA-N holmium atom Chemical compound [Ho] KJZYNXUDTRRSPN-UHFFFAOYSA-N 0.000 description 1
239000011261 inert gas Substances 0.000 description 1
229910052740 iodine Inorganic materials 0.000 description 1
239000011630 iodine Substances 0.000 description 1
239000010410 layer Substances 0.000 description 1
OHSVLFRHMCKCQY-UHFFFAOYSA-N lutetium atom Chemical compound [Lu] OHSVLFRHMCKCQY-UHFFFAOYSA-N 0.000 description 1
229910052749 magnesium Inorganic materials 0.000 description 1
SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
PVADDRMAFCOOPC-UHFFFAOYSA-N oxogermanium Chemical group [Ge]=O PVADDRMAFCOOPC-UHFFFAOYSA-N 0.000 description 1
150000002926 oxygen Chemical class 0.000 description 1
238000002161 passivation Methods 0.000 description 1
230000000704 physical effect Effects 0.000 description 1
230000002265 prevention Effects 0.000 description 1
229910052705 radium Inorganic materials 0.000 description 1
HCWPIIXVSYCSAN-UHFFFAOYSA-N radium atom Chemical compound [Ra] HCWPIIXVSYCSAN-UHFFFAOYSA-N 0.000 description 1
229910052706 scandium Inorganic materials 0.000 description 1
SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
238000007650 screen-printing Methods 0.000 description 1
230000035936 sexual power Effects 0.000 description 1
229910052814 silicon oxide Inorganic materials 0.000 description 1
239000002356 single layer Substances 0.000 description 1
239000007790 solid phase Substances 0.000 description 1
238000004544 sputter deposition Methods 0.000 description 1
238000005477 sputtering target Methods 0.000 description 1
229910052712 strontium Inorganic materials 0.000 description 1
CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
239000002887 superconductor Substances 0.000 description 1
229910052715 tantalum Inorganic materials 0.000 description 1
GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 description 1
229910052719 titanium Inorganic materials 0.000 description 1
239000010936 titanium Substances 0.000 description 1
239000012808 vapor phase Substances 0.000 description 1
239000011800 void material Substances 0.000 description 1
NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1

Classifications

- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E40/00—Technologies for an efficient electrical power generation, transmission or distribution
- Y02E40/60—Superconducting electric elements or equipment; Power systems integrating superconducting elements or equipment

Landscapes

Compositions Of Oxide Ceramics (AREA)
Oxygen, Ozone, And Oxides In General (AREA)
Inorganic Compounds Of Heavy Metals (AREA)
Superconductors And Manufacturing Methods Therefor (AREA)

JP62111614A 1987-05-06 1987-05-06 酸化物超電導材料の作製方法 Granted JPS63274682A (ja)

Priority Applications (3)

Application Number	Priority Date	Filing Date	Title
JP62111614A JPS63274682A (ja)	1987-05-06	1987-05-06	酸化物超電導材料の作製方法
US07/190,352 US4916116A (en)	1987-05-06	1988-05-05	Method of adding a halogen element into oxide superconducting materials by ion injection
US08/022,440 US5364835A (en)	1987-05-06	1993-02-16	Method of adding a halogen element into oxide superconducting materials by ion injection or thermal diffusion

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP62111614A JPS63274682A (ja)	1987-05-06	1987-05-06	酸化物超電導材料の作製方法

Publications (2)

Publication Number	Publication Date
JPS63274682A true JPS63274682A (ja)	1988-11-11
JPH0440284B2 JPH0440284B2 (fr)	1992-07-02

Family

ID=14565799

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP62111614A Granted JPS63274682A (ja)	1987-05-06	1987-05-06	酸化物超電導材料の作製方法

Country Status (1)

Country	Link
JP (1)	JPS63274682A (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPH0259467A (ja) *	1988-04-01	1990-02-28	Rhone Poulenc Chim	安定した超電導物質とその製造方法

1987
- 1987-05-06 JP JP62111614A patent/JPS63274682A/ja active Granted

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPH0259467A (ja) *	1988-04-01	1990-02-28	Rhone Poulenc Chim	安定した超電導物質とその製造方法

Also Published As

Publication number	Publication date
JPH0440284B2 (fr)	1992-07-02

Publication	Publication Date	Title
US4916116A (en)	1990-04-10	Method of adding a halogen element into oxide superconducting materials by ion injection
White et al.	1988	Ion-beam-induced destruction of superconducting phase coherence in YBa 2 Cu 3 O 7− δ
Ezhilvalavan et al.	1998	Conduction mechanisms in amorphous and crystalline Ta 2 O 5 thin films
US4784975A (en)	1988-11-15	Post-oxidation anneal of silicon dioxide
US5268311A (en)	1993-12-07	Method for forming a thin dielectric layer on a substrate
Bum Ki Moon et al.	1994	Roles of Buffer Layers in Epitaxial Growth of S r T i O 3 Films on Silicon Substrates
CN1034285A (zh)	1989-07-26	形成超导氧化物材料的方法和装置
US6294444B1 (en)	2001-09-25	Method for manufacturing silicon carbide semiconductor device
US4925829A (en)	1990-05-15	Method for preparing thin film of compound oxide superconductor by ion beam techniques
Neugebauer et al.	1964	Vapor‐Deposited Superconductive Films of Nb, Ta, and V
Saha et al.	2000	Impact of microstructure on the electrical stress induced effects of pulsed laser ablated (Ba, Sr) TiO 3 thin films
Cho et al.	2001	Structural and electrical characteristics of Y 2 O 3 films grown on oxidized Si (100) surface
JPS63275191A (ja)	1988-11-11	超電導装置の作製方法
JPS63261770A (ja)	1988-10-28	酸化物超電導材料の作製方法
Hillenbrand et al.	1976	Superconducting Nb3Sn cavities with high quality factors and high critical flux densities
JPS63274682A (ja)	1988-11-11	酸化物超電導材料の作製方法
Safa	2001	High field behavior of SCRF cavities
JPS63274657A (ja)	1988-11-11	酸化物超電導材料およびその作製方法
US5137868A (en)	1992-08-11	Method for preparing a superconducting device
JPS63261769A (ja)	1988-10-28	酸化物超電導材料の作製方法
US5232903A (en)	1993-08-03	Oxide superconducting device having uniform oxygen concentration
Peng et al.	1993	Low‐energy oxygen ion bombardment effect on BaTiO3 thin films grown by multi‐ion‐beam reactive sputtering technique
US5051377A (en)	1991-09-24	Method for forming a thin dielectric layer on a substrate
Park et al.	2001	Optimization of the annealing process for the (Ba, Sr) TiO3 thin films grown by low-temperature (420 C) metalorganic chemical vapor deposition
JPH0517272A (ja)	1993-01-26	酸化物超電導材料用劣化防止膜

JPS63274682A - 酸化物超電導材料の作製方法 - Google Patents

Info

Links

Classifications

Landscapes

Priority Applications (3)

Applications Claiming Priority (1)

Publications (2)

Family

ID=14565799

Family Applications (1)

Country Status (1)

Cited By (1)

Cited By (1)

Also Published As

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