JPS6331108B2 - - Google Patents

Info

Publication number
JPS6331108B2
JPS6331108B2 JP54096326A JP9632679A JPS6331108B2 JP S6331108 B2 JPS6331108 B2 JP S6331108B2 JP 54096326 A JP54096326 A JP 54096326A JP 9632679 A JP9632679 A JP 9632679A JP S6331108 B2 JPS6331108 B2 JP S6331108B2
Authority
JP
Japan
Prior art keywords
region
emitter
base
gate
collector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54096326A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5621365A (en
Inventor
Hisao Kondo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP9632679A priority Critical patent/JPS5621365A/ja
Publication of JPS5621365A publication Critical patent/JPS5621365A/ja
Publication of JPS6331108B2 publication Critical patent/JPS6331108B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30Devices controlled by electric currents or voltages
    • H10D48/32Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Junction Field-Effect Transistors (AREA)
JP9632679A 1979-07-28 1979-07-28 Semiconductor device Granted JPS5621365A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9632679A JPS5621365A (en) 1979-07-28 1979-07-28 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9632679A JPS5621365A (en) 1979-07-28 1979-07-28 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5621365A JPS5621365A (en) 1981-02-27
JPS6331108B2 true JPS6331108B2 (2) 1988-06-22

Family

ID=14161876

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9632679A Granted JPS5621365A (en) 1979-07-28 1979-07-28 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5621365A (2)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7115903B2 (en) 2001-12-28 2006-10-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and semiconductor device producing system
US7176490B2 (en) 2001-12-28 2007-02-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US7582162B2 (en) 2002-01-17 2009-09-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and semiconductor device production system

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59156462U (ja) * 1983-04-07 1984-10-20 セイレイ工業株式会社 枝打機におけるチエンソ−の位置決め装置
US5087214A (en) * 1991-05-21 1992-02-11 United Technologies Automotive, Inc. Battery terminal connector

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3792301A (en) * 1972-08-28 1974-02-12 Ncr Two directional plasma charge transfer device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7115903B2 (en) 2001-12-28 2006-10-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and semiconductor device producing system
US7176490B2 (en) 2001-12-28 2007-02-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US7582162B2 (en) 2002-01-17 2009-09-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and semiconductor device production system

Also Published As

Publication number Publication date
JPS5621365A (en) 1981-02-27

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