JPS6338344U - - Google Patents
Info
- Publication number
- JPS6338344U JPS6338344U JP13195186U JP13195186U JPS6338344U JP S6338344 U JPS6338344 U JP S6338344U JP 13195186 U JP13195186 U JP 13195186U JP 13195186 U JP13195186 U JP 13195186U JP S6338344 U JPS6338344 U JP S6338344U
- Authority
- JP
- Japan
- Prior art keywords
- areas
- contact
- large current
- semiconductor substrate
- utility
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Landscapes
- Electrodes Of Semiconductors (AREA)
Description
第１図は本考案の一実施例の製造工程を順次示
す断面図、第２図は従来の大電流用整流素子の基
板の断面図である。 １：ｎ形シリコン基板、２１，２２，２３：ｐ
領域、５，５１，５２，５３：電極、７：絶縁膜
、８：接触板、１３：アノード電極体。
す断面図、第２図は従来の大電流用整流素子の基
板の断面図である。 １：ｎ形シリコン基板、２１，２２，２３：ｐ
領域、５，５１，５２，５３：電極、７：絶縁膜
、８：接触板、１３：アノード電極体。
Claims (1)
- 半導体基板の一面側に複数の整流性接触領域が
形成され、該領域のうち選択された領域に被着さ
れた電極が共通電極体に接触したことを特徴とす
る大電流用整流素子。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1986131951U JPH0547479Y2 (ja) | 1986-08-28 | 1986-08-28 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1986131951U JPH0547479Y2 (ja) | 1986-08-28 | 1986-08-28 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6338344U true JPS6338344U (ja) | 1988-03-11 |
| JPH0547479Y2 JPH0547479Y2 (ja) | 1993-12-14 |
Family
ID=31030880
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1986131951U Expired - Lifetime JPH0547479Y2 (ja) | 1986-08-28 | 1986-08-28 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0547479Y2 (ja) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52136580A (en) * | 1976-05-11 | 1977-11-15 | Sumitomo Electric Ind Ltd | Multidiodes |
| JPS6061746U (ja) * | 1983-09-30 | 1985-04-30 | 関西日本電気株式会社 | ダイオ−ド |
-
1986
- 1986-08-28 JP JP1986131951U patent/JPH0547479Y2/ja not_active Expired - Lifetime
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52136580A (en) * | 1976-05-11 | 1977-11-15 | Sumitomo Electric Ind Ltd | Multidiodes |
| JPS6061746U (ja) * | 1983-09-30 | 1985-04-30 | 関西日本電気株式会社 | ダイオ−ド |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0547479Y2 (ja) | 1993-12-14 |