JPS634488A - magnetic bubble memory device - Google Patents

Abstract

(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a magnetic bubble memory device suitable for high-density and high-integration storage capacity.

[Conventional technology]

In recent years, with the increasing density and integration of storage capacity, so-called EVEN-ODD magnetic bubble memory devices, which have a large capacity by forming two sets of magnetic bubble memory elements on one substrate, have been developed, for example, in the Tokko Kokko 1983. -45234 publication or 〇-
For example, a π-type magnetic bubble memory device is disclosed in Japanese Unexamined Patent Publication No. 57-1.
This method has been proposed in, for example, Japanese Patent No. 43788.

FIG. 6 is a plan view showing the configuration of this type of magnetic bubble memory device. In the figure, m is a minor loop, Mm is a minor loop, G is a magnetic bubble generator, WL is a write line, WG is a gate for writing information, MWG is a gate for writing map information, RG is a gate for reading information,
RL is a read line, and MRG is a map information read gate.

DM is a main detector, DD is a dummy detector, BP is a bonding pad as a terminal, thick lines indicate a conductive pattern, and thin lines indicate a chevron pattern transfer path for transferring magnetic bubbles.

In the figure, the left side is the EVEN side block BRE, and the right side is the OD.
The D side block is BR○.

In the magnetic bubble memory device configured in this way,
The minor loop m is a loop that stores information and is composed of a large number of closed-loop bubble transfer paths.For example, an lMb element usually consists of 500 to 600 minor loops m,
It occupies most of the area of the device. In addition, in magnetic bubble memory devices, in order to tolerate defects to a certain extent, redundant minor loops are usually provided, which are approximately 10% of the number of minor loops, so that multiple malfunctioning minor loops may exist within the magnetic bubble memory device. ing. In magnetic bubble memory elements that allow such redundant minor loops,
Further, as a special loop, a minor loop Mm is provided as an arithmetic loop for storing defective loop numbers.

The EVEN-ODD type magnetic bubble memory device divides information into even bits and odd bits and stores the even bits as E.
Store in VEN side block BRE, odd bits ODD
For example, the number of focuses from the first minor loop m to the magnetic bubble detector G and the number of bits from the first minor loop m to the magnetic bubble generator G are stored in the EVEN side blocks BRE and ODD. The side block BRO is different by one bit, and is configured so that even number bits and odd number bits can be divided for easier processing. Also, the minor loop Mm is the EVEN side block B
It is sufficient to provide one in common to RE and ODD side block BRO, and normally one minor loop is provided in ODD side block BR○, and within this one minor loop, EVE
Defective loop number information (map information) of both blocks BRE and BRO of the N side block BRE and ODD side block BRO is stored. Alternatively, in some cases, as shown in FIG.
e, Mmo, and EV in the minor loop MIlle.
The map information of the EN side block BRE is sent to the minor loop M.
The map information of the ODD side block BRO is stored in mo. In this case, different information is stored in the two minor loops Mme and Mmo and used simultaneously. In addition, the number of bits to the magnetic bubble detector G and the number of bits from the magnetic bubble generator G are two minor loops Mme, Mm.
The focus is made to differ by one point between the two images to facilitate processing.

Note that the minor loops M me and M mo are usually
As shown in FIG. 6, the magnetic bubble detector, the magnetic bubble generator G, the -+'J input line WL, the read line RL, etc. have a common configuration with the minor loop m, and the map information writing gate MWG A map information reading gate MRG is provided exclusively for the minor loop Mm and independently from the gate for the minor loop m.

In the magnetic bubble memory device π configured as described above, if a defect occurs in the minor loop m, it can be repaired and tolerated by the redundant loop. However, if the minor loop Mm becomes a defective loop, the magnetic bubble memory element cannot be repaired. For example, in the case of a 1Mb element,
Assuming that the number of minor loops m is approximately 600 and the number of defective loops is approximately 30 with an average of 5%, in the case of Fig. 6, both the two minor loops Mme and Mmo must be normal loops. , minor loop Mme, Mmo
If either one of them becomes a defective loop, this magnetic bubble memory element becomes defective. These minor loops Mme
, the defective rate at which Mmo becomes a defective loop is 5 in this case.
%X2=10%, resulting in an extremely high defective rate and causing a problem. In other words, even if the minor loop m has some degree of defect and can be tolerated, the minor loops Mme and Mmo become defective loops and the failure rate of defective elements becomes a non-negligible level, posing a problem.

As a countermeasure for this, a configuration in which a redundant map loop is also provided in the minor loop Mm can be considered. FIG. 7 shows the configuration of this redundant minor loop.

As shown in the figure, in an element configuration in which only one minor loop Mmo is provided in the ODD side block BRO, if a redundant minor loop Mnor is provided for this minor loop Mmo, when this minor loop Mmo becomes a defective loop, the redundant minor loop Mmor The idea is to use

In the case of the conventional configuration, a method is used in which the redundant minor loop Mmor is provided closest to the minor loop Mmo (adjacent juxtaposition method). Therefore, for the case of FIG. 6, by this adjacent juxtaposition method, the minor loop M
Although not shown, redundant minor loops M mre and M mro are arranged adjacent to the lower sides of me and Mmo. In these cases, when the probability that minor loop Mm becomes defective is 10%, the probability that both minor loop Mm and redundant minor loop Mmr become defective and become defective elements is calculated to be 10%XIO%=1%, which is significantly This means that it can be reduced to

[Problem that the invention seeks to solve]

However, such a redundant minor loop configuration method has the following problems.

That is, the first problem is that in FIG. 7, the number of bits up to the magnetic bubble detector and the number of bits from the magnetic bubble generator G are different when using the minor loop Mm and when using the redundant minor loop Mmr. They differ by 1 or 2 bits. Therefore, the method of using the minor loop becomes complicated, and the processing circuit used becomes complicated.

The second problem is caused by the fact that the minor loop Mm and the redundant minor loop Mar are juxtaposed adjacent to each other.

In the above example, the probability that both loops Mm and MILr become defective and become defective elements is calculated to be about 1%, which can be significantly reduced, but in reality it is not reduced that much. - In general, there is an extremely high probability that a loop immediately adjacent to a defective loop will also become a defective loop. Therefore, in the case of the adjacent juxtaposition method, if the minor loop Mm is a defective loop, the adjacent redundant map loop also becomes a defective loop at the same time, and therefore both minor loops Mm and MffIr become defective. As a result, even if a redundant minor loop M+ir is provided,
High map defect rate cannot be reduced.

SUMMARY OF THE INVENTION An object of the present invention is to provide a magnetic bubble memory device that solves the above-mentioned problems of the minor loop and simplifies the method of using the minor loop.

Another object of the present invention is to provide a magnetic bubble memory device in which the defect rate of minor loops is reduced.

[Means for solving problems]

According to one embodiment of the present invention, a minor loop for storing defective loop information and a redundant minor loop are provided, and the number of bits of the minor loop and the redundant minor loop to the magnetic bubble detector are matched. Since the minor loop only performs a read operation in normal operation, the number of bits up to the magnetic bubble generator does not necessarily have to match.

[Effect]

In the present invention, the number of bits is the same when using a minor loop and when using a redundant minor loop, and can be used in exactly the same way.

〔Example〕

Embodiments of the present invention will be described in detail below with reference to the drawings.

FIG. 1 is a plan configuration diagram of a bit-by-bit type magnetic bubble memory element showing an embodiment of the magnetic bubble memory device according to the present invention, and the same parts as in the previous figures are given the same reference numerals. As shown in FIG. 1, the magnetic bubble memory device according to the present invention includes two independent magnetic bubble memory element blocks BR that input and output information writing and reading on a bit-by-bit basis.
It is composed of I and BR2, and the timing (phase) of writing or reading information is different from each other by 180 degrees,
It has the feature that it can input and output 2 bits of information in one cycle, and can input and output information at twice the speed.

In such a configuration, the first element block BRI includes a minor loop M111 and a redundant minor loop M+i.
, r, and the second element block BR2 is also provided with a minor loop Mm2 and a redundant minor loop Mm.
2r are provided respectively.

These minor loops Mm and redundant minor loops M+r, as shown in FIG. By changing one bit (by changing the period, etc.), the number of bits up to the magnetic bubble detector is made to match, and the logical constants are set to be the same. In other words,
The number of bits of the transfer path from each replicate gate section of the redundant minor loop and the minor loop to the point where it joins the common glue domainer line is made the same.

Furthermore, if the distance between the redundant minor loop Mar and the minor loop Mm is, for example, n bits apart in the transfer cycle of the read/major line PΩ, it is only necessary to make the number of bits from each loop to the major line different by n bits. It's easy to understand.

However, it is necessary to write defective loop information etc. to only one of them.

According to such a configuration, unlike the above-described adjacent juxtaposition method of minor loops, the probability that the minor loop Mm and the redundant minor loop Mmr become defective at the same time can be significantly reduced as calculated above. Further, since the number of bits is the same when using the minor loop Mm and when using the redundant minor loop Mmr, they can be used in exactly the same way, and the processing circuit used can be greatly simplified.

FIG. 3 is a plan configuration diagram of an EVEN-ODD type magnetic bubble memory element showing another embodiment of the magnetic bubble memory device according to the present invention, and the same parts as in the previous figures are given the same reference numerals. In the same figure, EVEN side block BR
E includes a minor loop Mme that stores defective loop information of the EVEN side block BRE and an ODD side block B.
A minor loop Mmo for storing defective loop information of the RO is provided, and redundant minor loops M nor and M mer are provided in the oDD side block BRO, respectively. And these minor loops Mme,
M mer 0 and redundant minor loop M mer + M n
For or, the number of bits up to the magnetic bubble detector is made to match between both, and the logical constants are set to be the same.

Even in such a configuration, the same effects as described above can be obtained.

In addition, in addition to the EVEN side block BRE and the ODD side block BRO, as shown in FIG.
and a new read line RLm, and the bit numbers of the write line W L m and the read line RLm are changed to the minor loop Mm and the redundant minor loop MIIlr.
By patenting the same patent for both, the same setting of logical constants can be easily realized.

FIG. 5 is a plan view of a magnetic bubble memory element having a 0-π configuration showing another embodiment of the magnetic bubble memory device according to the present invention, in which the same parts as those in the previous figures are given the same reference numerals. In the figure, the magnetic bubble memory device with this 0-π configuration is composed of two independent magnetic bubble memory element blocks that input and output information writing and reading for each bit, and the timing (phase) of writing and reading information. ) is composed of an O-phase block BRO and a π-phase block BRπ, which differ from each other by 180 degrees, and has the feature that 2 bits of information can be input and output in one cycle, and information can be input and output at twice the speed. .

In such a configuration, the 0 phase block BRO has 0
A minor loop Mm is provided for storing defective loop information of the phase block BRO and the π-phase block BRπ, and the O-phase block BRO is further provided with its redundant loop Mm.
r is provided respectively. In this case, in the minor loop Mm and the redundant minor loop Mmr, the number of bits up to the magnetic bubble detector and the number of bits from the magnetic bubble generator G are made to match, and the logical constants are set to be the same.

Even in such a configuration, the same effects as described above can be obtained.

〔Effect of the invention〕

As explained above, according to the present invention, a minor loop for storing defective loop information and a redundant map loop are provided, and the number of bits up to the magnetic bubble detector of the minor loop and the redundant minor loop are matched, so that the minor loop can be used. The method is simplified and the processing circuitry used is simplified.

In addition, the defect rate of minor loops is significantly reduced, yield is improved, and productivity can be improved.
This has an extremely excellent effect in that a magnetic bubble memory device with high quality and reliability can be obtained.

[Brief explanation of the drawing]

FIG. 1 is a plan configuration diagram showing an embodiment of the magnetic bubble memory device according to the present invention, FIG. 2 is an enlarged plan view of main parts showing a map information read gate section, and FIG. 3 is a plan view showing an embodiment of the magnetic bubble memory device according to the present invention. FIG. 4 is a plane configuration diagram of an EVEN-ODD magnetic bubble memory device showing another embodiment of the present invention; FIG. FIG. 5 is a plan configuration diagram of a Q-π configuration magnetic bubble memory element showing another embodiment of the magnetic bubble memory device according to the present invention, and FIGS. 6 and 7 are problems with the conventional magnetic bubble memory device. FIG. 2 is a plan configuration diagram of an EVEN-ODD magnetic bubble memory device for explaining the point. BRI, BR2...magnetic bubble memory element block,
BRE...EVEN side block, BRO...ODD
Side block, BRO...O phase block, BRE...
π phase block, m, me. m,,mπ” ”minor loop, M m , Mn
1. Mm,, Mrae, Mrmo” minor loop, Mn+r, M+i1r.

Claims (1)

[Claims] 1. A map loop for storing defective loop information and a redundant map loop are provided in the minor loop for storing information,
A magnetic bubble memory device characterized in that a map loop and a redundant map loop have the same number of bits up to a magnetic bubble detector. 2. E of magnetic bubble memory element with EVEN-ODD configuration
A plurality of map loops for storing defective loop information are provided in the VEN side block or ODD side block, and a redundant map loop is provided in the other block, and the number of bits up to the magnetic bubble detector of the map loop and the redundant map loop is made equal. A magnetic bubble memory device characterized by: 3. A map loop for storing defective loop information is provided in the 0-phase block or π-phase block of the magnetic bubble memory cord having a 0-π configuration, and a redundant map loop is provided in the other block, and the map loop and the redundant map loop are provided in the other block. A magnetic bubble memory device characterized in that the number of bits up to the magnetic bubble detector is matched with that of the magnetic bubble detector.