JPS6349256U - - Google Patents

Info

Publication number
JPS6349256U
JPS6349256U JP14285986U JP14285986U JPS6349256U JP S6349256 U JPS6349256 U JP S6349256U JP 14285986 U JP14285986 U JP 14285986U JP 14285986 U JP14285986 U JP 14285986U JP S6349256 U JPS6349256 U JP S6349256U
Authority
JP
Japan
Prior art keywords
conductivity type
region
semiconductor substrate
well region
mos transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14285986U
Other languages
English (en)
Other versions
JPH0636596Y2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1986142859U priority Critical patent/JPH0636596Y2/ja
Publication of JPS6349256U publication Critical patent/JPS6349256U/ja
Application granted granted Critical
Publication of JPH0636596Y2 publication Critical patent/JPH0636596Y2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Description

【図面の簡単な説明】
第１図および第２図は本考案に依るＣＭＯＳ半
導体装置を説明する断面図、第３図は本考案のラ
ツチアツプを説明する等価回路図、第４図は従来
のＣＭＯＳ半導体装置を説明する断面図、第５図
は従来のラツチアツプを説明する等価回路図であ
る。 １は半導体基板、５はＰチヤンネルＭＯＳトラ
ンジスタ、６はウエル領域、１０はＮチヤンネル
ＭＯＳトランジスタ、１１，１２はコンタクト領
域、１３，１４は取出し領域である。

Claims (1)

    【実用新案登録請求の範囲】
  1. 一導電型の半導体基板と逆導電型のウエル領域
    と前記半導体基板表面に形成した一導電チヤンネ
    ルのＭＯＳトランジスタと前記ウエル領域に形成
    した逆導電チヤンネルのＭＯＳトランジスタとを
    具備するＣＭＯＳ半導体装置において、前記半導
    体基板上に設けた一導電型のコンタクト領域と前
    記ウエル領域に設けた逆導電型のコンタクト領域
    に前記両ＭＯＳトランジスタのソース領域よりも
    低コンタクト抵抗の取出し領域を設けたことを特
    徴とするＣＭＯＳ半導体装置。
JP1986142859U 1986-09-17 1986-09-17 Ｃｍｏｓ半導体装置 Expired - Lifetime JPH0636596Y2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1986142859U JPH0636596Y2 (ja) 1986-09-17 1986-09-17 Ｃｍｏｓ半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1986142859U JPH0636596Y2 (ja) 1986-09-17 1986-09-17 Ｃｍｏｓ半導体装置

Publications (2)

Publication Number Publication Date
JPS6349256U true JPS6349256U (ja) 1988-04-04
JPH0636596Y2 JPH0636596Y2 (ja) 1994-09-21

Family

ID=31051992

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1986142859U Expired - Lifetime JPH0636596Y2 (ja) 1986-09-17 1986-09-17 Ｃｍｏｓ半導体装置

Country Status (1)

Country Link
JP (1) JPH0636596Y2 (ja)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60223154A (ja) * 1984-04-20 1985-11-07 Hitachi Ltd 半導体装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60223154A (ja) * 1984-04-20 1985-11-07 Hitachi Ltd 半導体装置

Also Published As

Publication number Publication date
JPH0636596Y2 (ja) 1994-09-21

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