JPS6358800B2 - - Google Patents

Info

Publication number
JPS6358800B2
JPS6358800B2 JP60129304A JP12930485A JPS6358800B2 JP S6358800 B2 JPS6358800 B2 JP S6358800B2 JP 60129304 A JP60129304 A JP 60129304A JP 12930485 A JP12930485 A JP 12930485A JP S6358800 B2 JPS6358800 B2 JP S6358800B2
Authority
JP
Japan
Prior art keywords
ingot
annealing
wafer
crystal
concentration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP60129304A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61286300A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP60129304A priority Critical patent/JPS61286300A/ja
Publication of JPS61286300A publication Critical patent/JPS61286300A/ja
Publication of JPS6358800B2 publication Critical patent/JPS6358800B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
JP60129304A 1985-06-13 1985-06-13 均一な特性を有するＧａＡｓ単結晶の製造方法 Granted JPS61286300A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60129304A JPS61286300A (ja) 1985-06-13 1985-06-13 均一な特性を有するＧａＡｓ単結晶の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60129304A JPS61286300A (ja) 1985-06-13 1985-06-13 均一な特性を有するＧａＡｓ単結晶の製造方法

Publications (2)

Publication Number Publication Date
JPS61286300A JPS61286300A (ja) 1986-12-16
JPS6358800B2 true JPS6358800B2 (de) 1988-11-16

Family

ID=15006253

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60129304A Granted JPS61286300A (ja) 1985-06-13 1985-06-13 均一な特性を有するＧａＡｓ単結晶の製造方法

Country Status (1)

Country Link
JP (1) JPS61286300A (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0787187B2 (ja) * 1987-08-13 1995-09-20 古河電気工業株式会社 ＧａＡｓ化合物半導体基板の製造方法
JPH0699235B2 (ja) * 1988-03-16 1994-12-07 株式会社ジャパンエナジー 化合物半導体単結晶の製造方法
JPH03193699A (ja) * 1989-12-21 1991-08-23 Sumitomo Metal Mining Co Ltd 燐化ガリウム単結晶のウエハー切り出し前処理方法

Also Published As

Publication number Publication date
JPS61286300A (ja) 1986-12-16

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