JPS6373379A - Image recognizing method for transparent conductive film pattern - Google Patents

Image recognizing method for transparent conductive film pattern

Info

Publication number
JPS6373379A
JPS6373379A JP61217797A JP21779786A JPS6373379A JP S6373379 A JPS6373379 A JP S6373379A JP 61217797 A JP61217797 A JP 61217797A JP 21779786 A JP21779786 A JP 21779786A JP S6373379 A JPS6373379 A JP S6373379A
Authority
JP
Japan
Prior art keywords
image
illumination
conductive film
film pattern
transparent conductive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP61217797A
Other languages
Japanese (ja)
Other versions
JPH0568744B2 (en
Inventor
Akiyoshi Fujimori
昭芳 藤森
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Orc Manufacturing Co Ltd
Original Assignee
Orc Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Orc Manufacturing Co Ltd filed Critical Orc Manufacturing Co Ltd
Priority to JP61217797A priority Critical patent/JPS6373379A/en
Publication of JPS6373379A publication Critical patent/JPS6373379A/en
Publication of JPH0568744B2 publication Critical patent/JPH0568744B2/ja
Granted legal-status Critical Current

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  • Image Input (AREA)
  • Image Processing (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Image Analysis (AREA)
  • Liquid Crystal (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To stably recognize a transparent conductive film pattern on a transparent substrate by executing the illumination from the rear surface of the transparent substrate and recognizing an image with the reflecting light of the illumination. CONSTITUTION:An indium tin oxide ITO film pattern 1 to recognize an image for alignment is formed on the surface of a transparent glass substrate 2, and a photoresist 3 having a sensitive hardenability to an ultraviolet exposure for the exposure in a photolithography is uniformly coated from the top of an ITO film. In the lower direction of the pattern 1, an aperture part 4a is provided for the image pick-up by a microscope camera 5. The camera 5 has a half mirror 6 between an objective lens 5a and an eyepiece 5b, and from other illumination light source 7 to the same axis as an observation light axis, the illumination of a visible light is given to an observing surface. Thus, a reflecting light from the observing surface is directly advanced, image-formed to an image pick-up element 8 and converted to an electric signal.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、透明基板の表面上に形成された透明導電膜パ
ターンの画像認識方法に関するものである。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for image recognition of a transparent conductive film pattern formed on the surface of a transparent substrate.

〔従来の技術〕[Conventional technology]

液晶,エレクトロルミネセンス(EL)を使用した表示
デバイス等においては、ガラス基板等の透明基板の表面
に透明電極を形成した基板が使用される。この透明電極
としてITO膜(インジウム・ティン・オキサイド膜)
等の透明導電膜をフォトリソグラフィーによってパター
ン形成したものが使用されている。このフォトリソグラ
フィーにおける露光工程では、マスクフィルムまたはガ
ラスマスク等の原稿画像パターンとITO膜を形成しフ
ォトレジストをコートしたガラス基板との位置合せの際
に、いわゆるトンボ合せ(位置合せマークの照合)が行
われ、このとき予めガラス基板表面上に透明導電膜によ
って位置合せ用のアライメントマークを形成しておいて
、これを電気信号的に画像認識することにより、トンボ
合せを行う方法が行われている。
2. Description of the Related Art Display devices using liquid crystals and electroluminescence (EL) use substrates in which transparent electrodes are formed on the surface of a transparent substrate such as a glass substrate. ITO film (indium tin oxide film) is used as this transparent electrode.
A transparent conductive film patterned by photolithography is used. In the exposure process in this photolithography, so-called register mark alignment (alignment mark comparison) is performed when aligning the original image pattern such as a mask film or glass mask with the glass substrate on which an ITO film is formed and a photoresist is coated. At this time, a method is used in which alignment marks are formed in advance on the surface of the glass substrate using a transparent conductive film, and registration marks are aligned by image recognition of the marks using electrical signals. .

従来における画像認識方法としては、第3図に示すよう
に透明基板2の表面側、即ち原稿画像パターン1)の上
から照明をしその反射光によって行っていた。第4図は
その電気的に変換された識別画像のコントラストを示す
グラフである。
In the conventional image recognition method, as shown in FIG. 3, illumination is applied from the front side of the transparent substrate 2, that is, from above the original image pattern 1), and the reflected light is used. FIG. 4 is a graph showing the contrast of the electrically converted identification image.

さらに、他の従来の画像認識方法としては、ITO膜と
ガラス基板表面に断差があり、フォトレジストをコート
してもその断差に変わりないことを利用して、コヒレン
トな単色光(可干渉光)を照射することによりこの断差
部分による光の位相ズレ等からIT○膜のパターンの画
像認識を行っていた。
Furthermore, other conventional image recognition methods utilize the fact that there is a difference between the ITO film and the surface of the glass substrate, and that this difference does not change even when coated with photoresist. By irradiating it with light), image recognition of the pattern of the IT○ film was performed based on the phase shift of the light caused by this difference.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

しかしながら、上記透明基板の表面側から照明し画像認
識する方法においては、透明基板、特に透明ガラス基板
2と透明導電膜、特にITO膜1とは、透過特性1反射
特性、屈折特性が非常に類偵し透明に見えるため、透明
導電膜面と透明ガラス基板表面の区別が限界状態にある
ところに加えて、基板表面のほぼ全面にコートされたフ
ォトレジスト3の光吸収特性とフォトレジスト表面が平
坦でないことから来る反射光の散乱のために、第4図の
グラフに示すように明暗レベルを64階調で示した場合
においてIT○膜パターンとガラス基板の明暗差が1ビ
ット程度というようにノイズ成分レベルとなってしまい
、画像認識が極めて困難であるという問題点があった。
However, in the image recognition method using illumination from the surface side of the transparent substrate, the transparent substrate, especially the transparent glass substrate 2, and the transparent conductive film, especially the ITO film 1, have very similar transmission characteristics, reflection characteristics, and refraction characteristics. Because it looks transparent when viewed from the outside, it is difficult to distinguish between the transparent conductive film surface and the transparent glass substrate surface.In addition, the light absorption characteristics of the photoresist 3 coated almost on the entire surface of the substrate and the flatness of the photoresist surface Due to the scattering of reflected light due to the fact that the brightness is not bright, there is noise, such as the difference in brightness between the IT○ film pattern and the glass substrate being about 1 bit when the brightness level is shown in 64 gradations as shown in the graph of Figure 4. There was a problem that image recognition was extremely difficult due to the component level.

さらに、従来の可干渉光を使用する透明導電膜パターン
の画像認識方法では、やや認識の信頼性は向上するもの
の、コヒレントな単色光を使用し、位相ズレを検出する
など装置が複雑化し高価であるという問題点や、その検
出にも長い時間を要するという問題点があった。
Furthermore, although conventional image recognition methods for transparent conductive film patterns that use coherent light improve recognition reliability, they use coherent monochromatic light and require phase shift detection, making the equipment complex and expensive. There have been problems in that there is a problem with this, and that it takes a long time to detect it.

本発明は上記の問題点を解決するためのものであり、安
価に、高速に、かつ安定に透明基板上の透明導電膜パタ
ーンの認識ができる画像認識方法を提供することを目的
とする。
The present invention is intended to solve the above-mentioned problems, and an object of the present invention is to provide an image recognition method capable of recognizing a transparent conductive film pattern on a transparent substrate at low cost, at high speed, and stably.

〔問題点を解決するための手段〕[Means for solving problems]

本発明の上記目的を達成するための手段は、透明基板の
表面に形成された透明導電膜パターンを画像認識する方
法において、前記透明基板の裏面から照明を行いその照
明の反射光により画像認識を行うことである。
Means for achieving the above object of the present invention is a method for image recognition of a transparent conductive film pattern formed on the surface of a transparent substrate, in which illumination is performed from the back surface of the transparent substrate and image recognition is performed using reflected light of the illumination. It is something to do.

上記画像認識においては、透明導電膜パターンとともに
、露光に使用する原稿画像パターンを同時に画像認識す
ることも可能である。
In the image recognition described above, it is also possible to simultaneously image recognize the document image pattern used for exposure together with the transparent conductive film pattern.

〔作用〕[Effect]

本発明は透明基板の裏面から照明を行い、その反射光に
よって画像認識を行うので、表面のフォトレジストの影
響を受けずに安定に画像認識を行うことができる。前述
のように透明基板と透明導電膜とは反射特性等が近似し
ているが、フォトレジストの影響がなければ必要十分な
画像認識が可能であり、また原稿画像パターンとの識別
もそのコントラストが大きいので可能である。従って、
用いる照明は通常の可視光で十分であり、イメージセン
サ等による普通の画像認識ができるので、安価でかつ高
速な画像認識方法を提供できる。
In the present invention, illumination is performed from the back surface of the transparent substrate, and image recognition is performed using the reflected light. Therefore, image recognition can be performed stably without being affected by the photoresist on the front surface. As mentioned above, the transparent substrate and the transparent conductive film have similar reflection characteristics, but without the influence of the photoresist, sufficient image recognition is possible, and identification with the original image pattern depends on the contrast. It's possible because it's big. Therefore,
Ordinary visible light is sufficient as the illumination used, and ordinary image recognition using an image sensor or the like can be performed, so an inexpensive and high-speed image recognition method can be provided.

C実施例〕 以下に本発明の一実施例を図面に基づいて詳細に説明す
る。
C Embodiment] An embodiment of the present invention will be described below in detail based on the drawings.

第1図は、本発明の一実施例の説明図である。FIG. 1 is an explanatory diagram of an embodiment of the present invention.

位置合せのため画像認識すべきITO膜パターン1が透
明なガラス基板2の表面に形成されており、フォトリソ
グラフィーにおける露光のため紫外線露光に対し感光硬
化性を有するフォトレジスト3がITO膜の上から一様
にコートされている。ガラス基板2はその露光のために
その裏面をワーク定盤4に真空吸着等によって固定され
る。このワーク定盤4において、前記の位置合せ用のI
TO膜パターン1の下方には顕微鏡カメラ5による撮像
のために開口部4aが設けられる。顕微鏡カメラ5は対
物レンズ5aと接眼レンズ5b間にハーフミラ−6を有
し、側方の照明光源7から観測光軸と同軸に観測面に可
視光の照明を与える(同軸落射照明方式)。観測面から
の反射光は直進して撮像素子8に結像し、電気信号に変
換される。この電気信号はアンプ9で増幅等の処理がな
された後、A/DコンバータIOによって画像の明暗レ
ベルを示すデジタル値(例えば64階調)に変換される
。ガラス基板2の上方には露光に使用するガラスマスク
1)があり、原稿画像パターンがアライメントマークと
ともにクロム膜1)aとして蒸着され形成されている。
An ITO film pattern 1 to be image-recognized for positioning is formed on the surface of a transparent glass substrate 2, and a photoresist 3 having photocurability sensitive to ultraviolet light is applied from above the ITO film for exposure in photolithography. Uniformly coated. The back surface of the glass substrate 2 is fixed to a work surface plate 4 by vacuum suction or the like for exposure. In this work surface plate 4, the above-mentioned positioning I
An opening 4a is provided below the TO film pattern 1 for imaging by a microscope camera 5. The microscope camera 5 has a half mirror 6 between an objective lens 5a and an eyepiece lens 5b, and provides visible light illumination to the observation surface from a side illumination light source 7 coaxially with the observation optical axis (coaxial epi-illumination method). The reflected light from the observation surface travels straight, forms an image on the image sensor 8, and is converted into an electrical signal. After this electric signal is subjected to processing such as amplification in the amplifier 9, it is converted into a digital value (for example, 64 gradations) indicating the brightness level of the image by the A/D converter IO. Above the glass substrate 2 is a glass mask 1) used for exposure, on which a document image pattern is deposited and formed as a chromium film 1)a together with alignment marks.

第2図は上記実施例において得られた画像の明暗レベル
を示すグラフである。照明の明るさを適切に調整するこ
とにより、ガラス基板2からの反射光の明暗レベル■と
ITO膜パターン1からの反射光の明暗レベル■とはフ
ォトレジスト3を通さないので、上記のデジタル値にお
いて2〜3ビット以上のコントラストが得られる。ノイ
ズ成分のレベルは通常1ビツト以下に押えられので、I
TO膜パターン1の画像認識は充分可能となる。
FIG. 2 is a graph showing the brightness level of the image obtained in the above example. By appropriately adjusting the brightness of the illumination, the brightness level ■ of the reflected light from the glass substrate 2 and the brightness level ■ of the reflected light from the ITO film pattern 1 do not pass through the photoresist 3, so the above digital values can be changed. A contrast of 2 to 3 bits or more can be obtained. Since the level of the noise component is usually kept below 1 bit, I
Image recognition of the TO film pattern 1 becomes fully possible.

また、ガラスマスクのパターンの明暗レベル■はガラス
基板2およびフォトレジスト3を通して観測することに
なるが、そもそもガラスマスクのパターンはコントラス
トが大きいため問題なく同時認識が可能である。
Further, the brightness level (1) of the pattern on the glass mask is observed through the glass substrate 2 and the photoresist 3, but since the pattern on the glass mask has a high contrast in the first place, simultaneous recognition is possible without any problem.

本発明は上記実施例に限るものではなく、本発明の主旨
に沿って種々の応用と実施態様を取り得るものである。
The present invention is not limited to the above-mentioned embodiments, but can be applied in various ways and implemented in accordance with the gist of the present invention.

例えば透明基板はガラス基板に限るものではなく透明樹
脂などであっても良いし、透明導電膜もITO膜に限ら
ず他の材料によるものでも良いことはもちろんのことで
ある。また、本発明の用途もいわゆるトンボ合せに限ら
ず、製品の検査などにも応用できる。
For example, the transparent substrate is not limited to a glass substrate, and may be made of transparent resin, and the transparent conductive film is not limited to an ITO film, but may be made of other materials. Further, the application of the present invention is not limited to so-called registration mark alignment, but can also be applied to product inspection.

〔発明の効果〕〔Effect of the invention〕

以上述べたように本発明によれば、フォトレジストを通
すことなく透明基板裏面から照明しその表面上の透明導
電膜パターンの画像認識を行うので、フォトレジスト中
の光の吸収や散乱の影響や、フォトレジストによる反射
光と直接光の干渉による撮像素子面上の結像の不安定性
やコントラストの低下を避けることができ、また可干渉
光を用いて画像認識を行う必要がなくなるので、安価か
つ高速に透明基板上の透明導電膜パターンの画像認識を
行うことができる。
As described above, according to the present invention, the light is illuminated from the back side of the transparent substrate without passing through the photoresist, and the image of the transparent conductive film pattern on the surface of the substrate is recognized. , it is possible to avoid the instability of the image formation on the image sensor surface and the decrease in contrast due to interference between the reflected light and direct light from the photoresist, and it is also possible to avoid the need for image recognition using coherent light, which is inexpensive and Image recognition of a transparent conductive film pattern on a transparent substrate can be performed at high speed.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の一実施例の説明図、第2図は実施例に
おいて得られた画像の明暗レベルを示すグラフ、第3図
は従来例の説明図、第4図は従来例の画像の明暗レベル
を示すグラフである。 ■・・・ITO膜パターン(透明導電膜パターン)2・
・・ガラス基板(透明基板) 5・・・顕微鏡カメラ 7・・・照明用光源 8・・・撮像素子 1)・・・ガラスマスク(原稿画像パターン)特許出願
人  株式会社オーク製作所 画イ事[イ名号のIl]FIBfし公゛lν第3図 第4図
Fig. 1 is an explanatory diagram of an embodiment of the present invention, Fig. 2 is a graph showing the brightness level of an image obtained in the embodiment, Fig. 3 is an explanatory diagram of a conventional example, and Fig. 4 is an image of a conventional example. It is a graph showing the brightness level of. ■...ITO film pattern (transparent conductive film pattern) 2.
...Glass substrate (transparent substrate) 5...Microscope camera 7...Illumination light source 8...Image sensor 1)...Glass mask (original image pattern) Patent applicant Oak Manufacturing Co., Ltd. Figure 3 Figure 4

Claims (2)

【特許請求の範囲】[Claims] (1)透明基板の表面に形成された透明導電膜パターン
を画像認識する方法において、 前記透明基板の裏面から照明を行い、 その照明の反射光により画像認識を行うことを特徴とす
る透明導電膜パターンの画像認識方法。
(1) A method for image recognition of a transparent conductive film pattern formed on the surface of a transparent substrate, characterized in that illumination is performed from the back side of the transparent substrate, and image recognition is performed by reflected light of the illumination. Pattern image recognition method.
(2)前記画像認識は透明導電膜パターンとともに露光
に使用する原稿画像パターンとを同時に画像認識するも
のであることを特徴とする前記特許請求の範囲第1項に
記載の透明導電膜パターンの画像認識方法。
(2) The image of the transparent conductive film pattern according to claim 1, wherein the image recognition is performed by simultaneously recognizing the image of the transparent conductive film pattern and a document image pattern used for exposure. Recognition method.
JP61217797A 1986-09-16 1986-09-16 Image recognizing method for transparent conductive film pattern Granted JPS6373379A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61217797A JPS6373379A (en) 1986-09-16 1986-09-16 Image recognizing method for transparent conductive film pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61217797A JPS6373379A (en) 1986-09-16 1986-09-16 Image recognizing method for transparent conductive film pattern

Publications (2)

Publication Number Publication Date
JPS6373379A true JPS6373379A (en) 1988-04-02
JPH0568744B2 JPH0568744B2 (en) 1993-09-29

Family

ID=16709882

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61217797A Granted JPS6373379A (en) 1986-09-16 1986-09-16 Image recognizing method for transparent conductive film pattern

Country Status (1)

Country Link
JP (1) JPS6373379A (en)

Also Published As

Publication number Publication date
JPH0568744B2 (en) 1993-09-29

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