JPS6373584A - アレイ半導体レ−ザ用ヒ−トシンク - Google Patents

アレイ半導体レ−ザ用ヒ−トシンク

Info

Publication number: JPS6373584A
Authority: JP; Japan
Prior art keywords: semiconductor laser; layer; trench; heat sink; laser
Prior art date: 1986-09-16
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Granted

Application number

JP61218405A

Other languages

English (en)

Japanese (ja)

Other versions

JPH0553315B2 (de

Inventor

Yoshinori Ota

太田　義徳

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

NEC Corp

Original Assignee

NEC Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1986-09-16

Filing date

1986-09-16

Publication date

1988-04-04

1986-09-16 Application filed by NEC Corp filed Critical NEC Corp

1986-09-16 Priority to JP61218405A priority Critical patent/JPS6373584A/ja

1988-04-04 Publication of JPS6373584A publication Critical patent/JPS6373584A/ja

1993-08-09 Publication of JPH0553315B2 publication Critical patent/JPH0553315B2/ja

Status Granted legal-status Critical Current

Links

239000004065 semiconductor Substances 0.000 title claims abstract description 36
239000000758 substrate Substances 0.000 claims abstract description 18
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 10
229910052710 silicon Inorganic materials 0.000 claims abstract description 10
239000010703 silicon Substances 0.000 claims abstract description 10
239000013078 crystal Substances 0.000 abstract description 8
238000005530 etching Methods 0.000 abstract description 7
238000000034 method Methods 0.000 abstract description 6
YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 abstract description 4
238000002955 isolation Methods 0.000 abstract description 3
239000007788 liquid Substances 0.000 abstract description 3
238000004806 packaging method and process Methods 0.000 abstract description 3
PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 abstract description 2
238000009835 boiling Methods 0.000 abstract description 2
ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 6
230000003287 optical effect Effects 0.000 description 5
238000003491 array Methods 0.000 description 3
238000000151 deposition Methods 0.000 description 3
230000004927 fusion Effects 0.000 description 3
239000002184 metal Substances 0.000 description 3
229910052751 metal Inorganic materials 0.000 description 3
238000003486 chemical etching Methods 0.000 description 2
230000000694 effects Effects 0.000 description 2
PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
239000010931 gold Substances 0.000 description 2
229910052737 gold Inorganic materials 0.000 description 2
239000000203 mixture Substances 0.000 description 2
238000000926 separation method Methods 0.000 description 2
238000009966 trimming Methods 0.000 description 2
238000007740 vapor deposition Methods 0.000 description 2
FRWYFWZENXDZMU-UHFFFAOYSA-N 2-iodoquinoline Chemical compound C1=CC=CC2=NC(I)=CC=C21 FRWYFWZENXDZMU-UHFFFAOYSA-N 0.000 description 1
ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
238000005275 alloying Methods 0.000 description 1
LTPBRCUWZOMYOC-UHFFFAOYSA-N beryllium oxide Inorganic materials O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 description 1
229910052796 boron Inorganic materials 0.000 description 1
238000004891 communication Methods 0.000 description 1
239000012141 concentrate Substances 0.000 description 1
238000007796 conventional method Methods 0.000 description 1
230000008021 deposition Effects 0.000 description 1
230000006866 deterioration Effects 0.000 description 1
230000005611 electricity Effects 0.000 description 1
230000010365 information processing Effects 0.000 description 1
238000005468 ion implantation Methods 0.000 description 1
238000004519 manufacturing process Methods 0.000 description 1
150000002739 metals Chemical class 0.000 description 1
238000000206 photolithography Methods 0.000 description 1
229920002120 photoresistant polymer Polymers 0.000 description 1
238000007665 sagging Methods 0.000 description 1
239000000779 smoke Substances 0.000 description 1
XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4031—Edge-emitting structures
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0233—Mounting configuration of laser chips
- H01S5/0234—Up-side down mountings, e.g. Flip-chip, epi-side down mountings or junction down mountings

Landscapes

Physics & Mathematics (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Electromagnetism (AREA)
Optics & Photonics (AREA)
Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Semiconductor Lasers (AREA)

JP61218405A 1986-09-16 1986-09-16 アレイ半導体レ−ザ用ヒ−トシンク Granted JPS6373584A (ja)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
JP61218405A JPS6373584A (ja)	1986-09-16	1986-09-16	アレイ半導体レ−ザ用ヒ−トシンク

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP61218405A JPS6373584A (ja)	1986-09-16	1986-09-16	アレイ半導体レ−ザ用ヒ−トシンク

Publications (2)

Publication Number	Publication Date
JPS6373584A true JPS6373584A (ja)	1988-04-04
JPH0553315B2 JPH0553315B2 (de)	1993-08-09

Family

ID=16719397

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP61218405A Granted JPS6373584A (ja)	1986-09-16	1986-09-16	アレイ半導体レ−ザ用ヒ−トシンク

Country Status (1)

Country	Link
JP (1)	JPS6373584A (de)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US5515391A (en) *	1994-03-07	1996-05-07	Sdl, Inc.	Thermally balanced diode laser package
JP2007180563A (ja) *	2001-02-14	2007-07-12	Fuji Xerox Co Ltd	レーザ光源
US12176675B2 (en)	2019-01-10	2024-12-24	Mitsubishi Electric Corporation	Semiconductor laser device

1986
- 1986-09-16 JP JP61218405A patent/JPS6373584A/ja active Granted

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US5515391A (en) *	1994-03-07	1996-05-07	Sdl, Inc.	Thermally balanced diode laser package
JP2007180563A (ja) *	2001-02-14	2007-07-12	Fuji Xerox Co Ltd	レーザ光源
US12176675B2 (en)	2019-01-10	2024-12-24	Mitsubishi Electric Corporation	Semiconductor laser device

Also Published As

Publication number	Publication date
JPH0553315B2 (de)	1993-08-09

Publication	Publication Date	Title
EP0590232B1 (de)	1997-08-06	Vielfachhalbleiterlaser
US8567051B2 (en)	2013-10-29	Process for the vertical interconnection of 3D electronic modules by vias
US5357536A (en)	1994-10-18	Method and apparatus for the positioning of laser diodes
US4536469A (en)	1985-08-20	Semiconductor structures and manufacturing methods
US5521931A (en)	1996-05-28	Nonmonolithic arrays of accurately positioned diode lasers
EP0963017B1 (de)	2007-07-11	Lichtemittierende Halbleitervorrichtung und Herstellungsverfahren
JP2018508979A (ja)	2018-03-29	間隔が密なレーザダイオードの構成
US8772822B2 (en)	2014-07-08	Light emitting device
US6485126B1 (en)	2002-11-26	Ink jet head and method of producing the same
JPS6373584A (ja)	1988-04-04	アレイ半導体レ−ザ用ヒ−トシンク
US5622586A (en)	1997-04-22	Method of fabricating device made of thin diamond foil
US5636235A (en)	1997-06-03	Semiconductor laser device including columns of semiconductor lasers with non-central light emitting regions
JP3755178B2 (ja)	2006-03-15	半導体レーザ
JP3708148B2 (ja)	2005-10-19	レーザーアレイ
JPS58170058A (ja)	1983-10-06	光集積化半導体装置
KR940003436B1 (ko)	1994-04-22	반도체발광장치
US9806495B2 (en)	2017-10-31	Optical module, method for fabricating the same
EP0086915B1 (de)	1989-02-08	Halbleiteranordnung mit leitenden Leitungen für die Verbindung von Komponenten
JP2523110Y2 (ja)	1997-01-22	マルチビ−ム半導体レ−ザ装置
JP2657214B2 (ja)	1997-09-24	面発光レーザ素子の製造方法
JPS63107057A (ja)	1988-05-12	単結晶基板
JPH1027944A (ja)	1998-01-27	光半導体素子とその製造方法，及び光半導体モジュールとその製造方法
JPH10242583A (ja)	1998-09-11	半導体レーザ素子の製造方法および半導体レーザ装置
JP2016201192A (ja)	2016-12-01	チップヒューズおよびチップヒューズの製造方法
JPH0555143A (ja)	1993-03-05	円形ウエハ上の結晶成長方法

JPS6373584A - アレイ半導体レ−ザ用ヒ−トシンク - Google Patents

Info

Links

Classifications

Landscapes

Priority Applications (1)

Applications Claiming Priority (1)

Publications (2)

Family

ID=16719397

Family Applications (1)

Country Status (1)

Cited By (3)

Cited By (3)

Also Published As

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