JPS637649A - 半導体素子の電極構造 - Google Patents

半導体素子の電極構造

Info

Publication number
JPS637649A
JPS637649A JP61152388A JP15238886A JPS637649A JP S637649 A JPS637649 A JP S637649A JP 61152388 A JP61152388 A JP 61152388A JP 15238886 A JP15238886 A JP 15238886A JP S637649 A JPS637649 A JP S637649A
Authority
JP
Japan
Prior art keywords
semiconductor
insulating film
film
electrode structure
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP61152388A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0582969B2 (2
Inventor
Hiroyuki Fujisada
藤定　広幸
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP61152388A priority Critical patent/JPS637649A/ja
Publication of JPS637649A publication Critical patent/JPS637649A/ja
Publication of JPH0582969B2 publication Critical patent/JPH0582969B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general

Landscapes

  • Local Oxidation Of Silicon (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP61152388A 1986-06-28 1986-06-28 半導体素子の電極構造 Granted JPS637649A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61152388A JPS637649A (ja) 1986-06-28 1986-06-28 半導体素子の電極構造

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61152388A JPS637649A (ja) 1986-06-28 1986-06-28 半導体素子の電極構造

Publications (2)

Publication Number Publication Date
JPS637649A true JPS637649A (ja) 1988-01-13
JPH0582969B2 JPH0582969B2 (2) 1993-11-24

Family

ID=15539424

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61152388A Granted JPS637649A (ja) 1986-06-28 1986-06-28 半導体素子の電極構造

Country Status (1)

Country Link
JP (1) JPS637649A (2)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010177248A (ja) * 2009-01-27 2010-08-12 Anritsu Corp 半導体装置及びその製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010177248A (ja) * 2009-01-27 2010-08-12 Anritsu Corp 半導体装置及びその製造方法

Also Published As

Publication number Publication date
JPH0582969B2 (2) 1993-11-24

Similar Documents

Publication Publication Date Title
US12255168B2 (en) Electronic device with multi-layer contact and system
US9852940B2 (en) Method for forming a reliable solderable contact
US7030496B2 (en) Semiconductor device having aluminum and metal electrodes and method for manufacturing the same
US20220013427A1 (en) Semiconductor device
JPS5846059B2 (ja) 半導体装置
US20060081996A1 (en) Semiconductor device having aluminum electrode and metallic electrode
JPH09260645A (ja) 半導体装置
JPH0582969B2 (2)
JPWO2019176095A1 (ja) 基板貼り合わせ構造及び基板貼り合わせ方法
JPS58123724A (ja) 半導体装置
US3702787A (en) Method of forming ohmic contact for semiconducting devices
JPH038346A (ja) ろう付け材料
JPH03238865A (ja) 半導体素子
JPH0682630B2 (ja) 半導体素子の多層電極の製造方法
JPS5950090B2 (ja) 半導体装置の製造方法
JPH0677467A (ja) ショットキバリア半導体装置
JPS6220338A (ja) 半導体装置の製造方法
JPS59161885A (ja) ホ−ル素子
EP4699164A1 (en) Power semiconductor devices including beryllium metallization
JPS62205650A (ja) 半導体装置用基板
JPH03191527A (ja) 半導体素子の電極構造
EP0266093A2 (en) Process of making a high power multi-layer semiconductive switching device with multiple parallel contacts
JP2001119059A (ja) 超伝導放射線検出素子
JP2000357702A (ja) 半導体装置及びその製造方法
JPS5823451A (ja) 半導体装置

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term