JPS6397248U - - Google Patents

Info

Publication number
JPS6397248U
JPS6397248U JP1987175722U JP17572287U JPS6397248U JP S6397248 U JPS6397248 U JP S6397248U JP 1987175722 U JP1987175722 U JP 1987175722U JP 17572287 U JP17572287 U JP 17572287U JP S6397248 U JPS6397248 U JP S6397248U
Authority
JP
Japan
Prior art keywords
series
conductive layer
silicon dioxide
insulating layer
terminal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1987175722U
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS6397248U publication Critical patent/JPS6397248U/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/62—Capacitors having potential barriers
    • H10D1/66—Conductor-insulator-semiconductor capacitors, e.g. MOS capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/212—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/211—Design considerations for internal polarisation
    • H10D89/213—Design considerations for internal polarisation in field-effect devices

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Description

【図面の簡単な説明】
第１図は本考案とともに使用するための回路手
段を含む本考案の概略図、第２図は回路手段の変
形例の概略図、第３図はさらに他の実施例の概略
図、第４図は回路手段の部分を含む本考案の具体
的な実施例の断面図である。 １，２…キヤパシタ、３…下部導電電極板、４
…中間電極板、５…上部導電電極板、６…グラン
ド点、７…Ｐ＋もしくはＮ＋領域、８…基板、１
０…多結晶層、９，１１…絶縁層、１２…導電層
、１３…付加金属導体、１４，１５，１６，１７
…ＭＯＳトランジスタ、１８…ＡＣ信号源、１９
…キヤパシタ、２０…回路構成、２１…ツエナー
ダイオード、２２…ダイオード、２３…整流ダイ
オード、２４…ソース、２５…ドレイン、２６…
チヤンネル、２７…ポリシリコンゲート、２８…
接触部。

Claims (1)

  1. 【実用新案登録請求の範囲】 (a) 相互に接続された複数のＣＭＯＳトランジ
    スタ、 (b) 直列に接続された一対のキヤパシタ手段、
    該キヤパシタ手段は、高濃度にＰ又はＮをドープ
    した基板のシリコン層よりなる底部導電領域と、
    該底部導電領域を実質的に覆う第１の二酸化シリ
    コン絶縁層と、少なくとも該底部導電領域を覆つ
    ている上記第１の二酸化シリコン絶縁層の上に形
    成された多結晶シリコンよりなる上部導電層と、
    該上部導電層を実質的に覆う第２の二酸化シリコ
    ン絶縁層と、上記上部導電層を覆つている第２の
    二酸化シリコン絶縁層の上側に配置された最上部
    導電層とから構成されている、 (c) 直列に接続され、各々ドレインに短絡され
    たゲートを有する複数のＭＯＳトランジスタ、上
    記一対のキヤパシタ手段間のジヤンクシヨンは、
    上記複数のＣＭＯＳトランジスタに接続されると
    ともに、上記直列接続された複数のＭＯＳトラン
    ジスタの一方の端子に接続されており、上記直列
    接続された複数のＭＯＳトランジスタの他方の端
    子は上記基板に接続されている、 (d) 上記最上部導電層に接続されたクロツク信
    号のための入力端子、 該入力端子は、上記複数のＣＭＯＳトランジス
    タのうちの所定のものに基板に直接ではなく上記
    複数のＣＭＯＳトランジスタの一端子にクロツク
    信号を印加するために接続されている、 (e) 以上の構造を有しており、上記一端子に印
    加されるクロツク信号は、タイミング信号と接続
    された複数のＭＯＳトランジスタのための動作電
    力の両方を与えるようになつている半導体集積回
    路構造。
JP1987175722U 1978-08-16 1987-11-16 Pending JPS6397248U (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/933,984 US4246502A (en) 1978-08-16 1978-08-16 Means for coupling incompatible signals to an integrated circuit and for deriving operating supply therefrom

Publications (1)

Publication Number Publication Date
JPS6397248U true JPS6397248U (ja) 1988-06-23

Family

ID=25464753

Family Applications (2)

Application Number Title Priority Date Filing Date
JP10395679A Pending JPS5558563A (en) 1978-08-16 1979-08-15 Integrated circuit chip assembling signal source and semiconductor strucutre used therefor
JP1987175722U Pending JPS6397248U (ja) 1978-08-16 1987-11-16

Family Applications Before (1)

Application Number Title Priority Date Filing Date
JP10395679A Pending JPS5558563A (en) 1978-08-16 1979-08-15 Integrated circuit chip assembling signal source and semiconductor strucutre used therefor

Country Status (5)

Country Link
US (1) US4246502A (ja)
JP (2) JPS5558563A (ja)
CA (1) CA1123523A (ja)
DE (1) DE2929921A1 (ja)
GB (1) GB2028585B (ja)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5811750B2 (ja) * 1979-06-04 1983-03-04 株式会社日立製作所 高耐圧抵抗素子
JPS57186805A (en) * 1981-05-14 1982-11-17 Citizen Watch Co Ltd Integrated circuit for quartz oscillation
JPS58119670A (ja) * 1982-01-11 1983-07-16 Nissan Motor Co Ltd 半導体装置
US4527180A (en) * 1983-01-31 1985-07-02 Intel Corporation MOS Voltage divider structure suitable for higher potential feedback regulation
JPS624146U (ja) * 1986-05-15 1987-01-12
US5686751A (en) * 1996-06-28 1997-11-11 Winbond Electronics Corp. Electrostatic discharge protection circuit triggered by capacitive-coupling
US5825079A (en) * 1997-01-23 1998-10-20 Luminous Intent, Inc. Semiconductor diodes having low forward conduction voltage drop and low reverse current leakage
US5716880A (en) * 1997-02-20 1998-02-10 Chartered Semiconductor Manufacturing Pte Ltd. Method for forming vertical polysilicon diode compatible with CMOS/BICMOS formation
US6271067B1 (en) 1998-02-27 2001-08-07 Micron Technology, Inc. Methods of forming field effect transistors and field effect transistor circuitry
EP0987763A1 (en) * 1998-09-15 2000-03-22 STMicroelectronics S.r.l. Diode connected transistor and related process of fabrication
US6420757B1 (en) 1999-09-14 2002-07-16 Vram Technologies, Llc Semiconductor diodes having low forward conduction voltage drop, low reverse current leakage, and high avalanche energy capability
US6433370B1 (en) 2000-02-10 2002-08-13 Vram Technologies, Llc Method and apparatus for cylindrical semiconductor diodes
US6507063B2 (en) * 2000-04-17 2003-01-14 International Business Machines Corporation Poly-poly/MOS capacitor having a gate encapsulating first electrode layer
US6538300B1 (en) 2000-09-14 2003-03-25 Vishay Intertechnology, Inc. Precision high-frequency capacitor formed on semiconductor substrate
US7151036B1 (en) * 2002-07-29 2006-12-19 Vishay-Siliconix Precision high-frequency capacitor formed on semiconductor substrate
US6580150B1 (en) 2000-11-13 2003-06-17 Vram Technologies, Llc Vertical junction field effect semiconductor diodes
US6633063B2 (en) * 2001-05-04 2003-10-14 Semiconductor Components Industries Llc Low voltage transient voltage suppressor and method of making
US6537921B2 (en) 2001-05-23 2003-03-25 Vram Technologies, Llc Vertical metal oxide silicon field effect semiconductor diodes
AU2002331897A1 (en) 2001-09-27 2003-04-07 Pioneer Hi-Bred International, Inc. Phytate polynucleotides and methods of use
US6958275B2 (en) * 2003-03-11 2005-10-25 Integrated Discrete Devices, Llc MOSFET power transistors and methods
WO2007071058A1 (en) * 2005-12-23 2007-06-28 Gosselin Francois Capacitor based transformer
US20110080760A1 (en) * 2009-10-02 2011-04-07 Chao-Cheng Lu Rectifier driving circuit

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51150987A (en) * 1975-06-10 1976-12-24 Ibm Cc2c switching capacitor ladder circuit
JPS52144278A (en) * 1976-05-27 1977-12-01 Toshiba Corp Circuit for protecting input with respect to mos integrated circuit

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3644850A (en) * 1969-06-11 1972-02-22 Ibm Integrated circuit band pass filter
US3789246A (en) * 1972-02-14 1974-01-29 Rca Corp Insulated dual gate field-effect transistor signal translator having means for reducing its sensitivity to supply voltage variations
US4163242A (en) * 1972-11-13 1979-07-31 Siemens Aktiengesellschaft MOS storage integrated circuit using individual FET elements
US3836992A (en) * 1973-03-16 1974-09-17 Ibm Electrically erasable floating gate fet memory cell
US3979734A (en) * 1975-06-16 1976-09-07 International Business Machines Corporation Multiple element charge storage memory cell
NL7609587A (nl) * 1975-09-08 1977-03-10 Ncr Co Elektrisch afstembare mnos-capaciteit.
FR2365859A1 (fr) * 1976-09-24 1978-04-21 Thomson Csf Memoire non volatile pour signaux rapides
FR2365858A1 (fr) * 1976-09-24 1978-04-21 Thomson Csf Memoire non volatile de longue duree pour signaux rapides
US4112509A (en) * 1976-12-27 1978-09-05 Texas Instruments Incorporated Electrically alterable floating gate semiconductor memory device
US4151021A (en) * 1977-01-26 1979-04-24 Texas Instruments Incorporated Method of making a high density floating gate electrically programmable ROM

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51150987A (en) * 1975-06-10 1976-12-24 Ibm Cc2c switching capacitor ladder circuit
JPS52144278A (en) * 1976-05-27 1977-12-01 Toshiba Corp Circuit for protecting input with respect to mos integrated circuit

Also Published As

Publication number Publication date
DE2929921A1 (de) 1980-02-28
GB2028585A (en) 1980-03-05
JPS5558563A (en) 1980-05-01
GB2028585B (en) 1983-02-16
US4246502A (en) 1981-01-20
CA1123523A (en) 1982-05-11

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