JPS6411322A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS6411322A
JPS6411322A JP62168204A JP16820487A JPS6411322A JP S6411322 A JPS6411322 A JP S6411322A JP 62168204 A JP62168204 A JP 62168204A JP 16820487 A JP16820487 A JP 16820487A JP S6411322 A JPS6411322 A JP S6411322A
Authority
JP
Japan
Prior art keywords
fluorosilane
compound
transparent conductive
thin film
iii compound
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62168204A
Other languages
Japanese (ja)
Other versions
JP2728874B2 (en
Inventor
Koji Igarashi
Nobuhiro Fukuda
Kenji Miyaji
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsui Toatsu Chemicals Inc
Original Assignee
Mitsui Toatsu Chemicals Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsui Toatsu Chemicals Inc filed Critical Mitsui Toatsu Chemicals Inc
Priority to JP62168204A priority Critical patent/JP2728874B2/en
Publication of JPS6411322A publication Critical patent/JPS6411322A/en
Application granted granted Critical
Publication of JP2728874B2 publication Critical patent/JP2728874B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Photovoltaic Devices (AREA)

Abstract

PURPOSE:To make damage as small as possible to a transparent conductive film and to obtain a semiconductor thin film good in its electrical characteristics on an interface, by forming an initial film part of the semiconductor thin film in contact with the transparent conductive film by the means of at least discharge decomposition of fluorosilane and III compound. CONSTITUTION:Fluorosilane or fluorodisilane is effective in use. Then, III arsenic compound or hydrogen compound is preferable for group III compound in use. A preferred ratio of a flow rate of the fluorosilane and the III compound is sufficient if III compound/fluorosilane=1X10<-7>-0.1. Manufacture of a mixed gas is not limited in particular. High-frequency glow discharge is effective in use for discharge decomposition. A transmitted substrate with a transparent conductive film, whose surface is cleaned by washing and/or etching, is located in a thin film forming device, and this substrate is heated at 100 deg.C-400 deg.C under vacuum exhaustion. A raw gas is supplied to this device, and pressure inside this device is made to be 1Torr or below to start a discharge operation.
JP62168204A 1987-07-06 1987-07-06 Semiconductor device manufacturing method Expired - Fee Related JP2728874B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62168204A JP2728874B2 (en) 1987-07-06 1987-07-06 Semiconductor device manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62168204A JP2728874B2 (en) 1987-07-06 1987-07-06 Semiconductor device manufacturing method

Publications (2)

Publication Number Publication Date
JPS6411322A true JPS6411322A (en) 1989-01-13
JP2728874B2 JP2728874B2 (en) 1998-03-18

Family

ID=15863717

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62168204A Expired - Fee Related JP2728874B2 (en) 1987-07-06 1987-07-06 Semiconductor device manufacturing method

Country Status (1)

Country Link
JP (1) JP2728874B2 (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5727015A (en) * 1980-07-25 1982-02-13 Agency Of Ind Science & Technol Manufacture of silicon thin film
JPS58143589A (en) * 1982-02-19 1983-08-26 Kanegafuchi Chem Ind Co Ltd Silicon base semiconductor
JPS6057617A (en) * 1984-04-16 1985-04-03 Shunpei Yamazaki Manufacture of semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5727015A (en) * 1980-07-25 1982-02-13 Agency Of Ind Science & Technol Manufacture of silicon thin film
JPS58143589A (en) * 1982-02-19 1983-08-26 Kanegafuchi Chem Ind Co Ltd Silicon base semiconductor
JPS6057617A (en) * 1984-04-16 1985-04-03 Shunpei Yamazaki Manufacture of semiconductor device

Also Published As

Publication number Publication date
JP2728874B2 (en) 1998-03-18

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees