JPS641231A - Manufacture of integrated circuit - Google Patents

Manufacture of integrated circuit

Info

Publication number
JPS641231A
JPS641231A JP15706287A JP15706287A JPS641231A JP S641231 A JPS641231 A JP S641231A JP 15706287 A JP15706287 A JP 15706287A JP 15706287 A JP15706287 A JP 15706287A JP S641231 A JPS641231 A JP S641231A
Authority
JP
Japan
Prior art keywords
pattern
conductive film
melting point
low melting
heat resistant
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15706287A
Other languages
Japanese (ja)
Other versions
JP2656256B2 (en
JPH011231A (en
Inventor
Minoru Noda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP15706287A priority Critical patent/JP2656256B2/en
Publication of JPS641231A publication Critical patent/JPS641231A/en
Publication of JPH011231A publication Critical patent/JPH011231A/en
Application granted granted Critical
Publication of JP2656256B2 publication Critical patent/JP2656256B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE: To improve contact characteristic by continuously forming a multilayer film of low melting point metal on a heat resistant conductive film in the same device immediately after a heat resistant conductive film is formed on a semiconductor substrate, and then forming a pattern.
CONSTITUTION: A heat resistant conductive film 2a is formed on a gallium arsenide substrate 1, and a multilayer film 3 of low melting point metal is formed thereon. Thereafter, a pattern is formed to form a pattern 20. Thus, since the surface of the pattern made of the conductive film is covered with the multilayer film of the low melting point metal, the formation of a high resistance layer based on surface oxidation can be avoided, and contact characteristic with upper layer wirings of high reliability is obtained.
COPYRIGHT: (C)1989,JPO&Japio
JP15706287A 1987-06-23 1987-06-23 Manufacturing method of integrated circuit Expired - Lifetime JP2656256B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15706287A JP2656256B2 (en) 1987-06-23 1987-06-23 Manufacturing method of integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15706287A JP2656256B2 (en) 1987-06-23 1987-06-23 Manufacturing method of integrated circuit

Publications (3)

Publication Number Publication Date
JPS641231A true JPS641231A (en) 1989-01-05
JPH011231A JPH011231A (en) 1989-01-05
JP2656256B2 JP2656256B2 (en) 1997-09-24

Family

ID=15641377

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15706287A Expired - Lifetime JP2656256B2 (en) 1987-06-23 1987-06-23 Manufacturing method of integrated circuit

Country Status (1)

Country Link
JP (1) JP2656256B2 (en)

Also Published As

Publication number Publication date
JP2656256B2 (en) 1997-09-24

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