JPS6420640A - Semiconductor device and manufacture thereof - Google Patents

Semiconductor device and manufacture thereof

Info

Publication number
JPS6420640A
JPS6420640A JP17623087A JP17623087A JPS6420640A JP S6420640 A JPS6420640 A JP S6420640A JP 17623087 A JP17623087 A JP 17623087A JP 17623087 A JP17623087 A JP 17623087A JP S6420640 A JPS6420640 A JP S6420640A
Authority
JP
Japan
Prior art keywords
layer
wirings
film
melting point
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP17623087A
Other languages
Japanese (ja)
Other versions
JPH0587144B2 (en
Inventor
Hideki Shibata
Mitsuchika Saitou
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP17623087A priority Critical patent/JPS6420640A/en
Priority to KR1019880005634A priority patent/KR880014647A/en
Publication of JPS6420640A publication Critical patent/JPS6420640A/en
Publication of JPH0587144B2 publication Critical patent/JPH0587144B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To prevent Si from precipitating and a contact resistance from increasing, to increase the life of wirings and to enhance the reliability of a semiconductor device by interposing a high melting point metal layer as barrier metal in a boundary between wirings containing aluminum as a main ingredient and an Si layer. CONSTITUTION:After a MOSFET and diffused wirings 12 are formed on an Si substrate 11, an interlayer insulating film 13 is formed. Then, after the surface is flattened through a low temperature reflowing step, a contact hole 14 is opened at the film 13 on the wirings 12. an Si layer 15 containing phosphorus is buried in the hole 14, a high melting point metal layer 17 is formed on the layer 15 and the film 13, and then heat treated. After an Al-Si layer 16 is formed by depositing on the layer 17, a laminated layer structure film made of the layer 16 and the film 17 is patterned in the same pattern to form a wiring layer 18.
JP17623087A 1987-05-15 1987-07-15 Semiconductor device and manufacture thereof Granted JPS6420640A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP17623087A JPS6420640A (en) 1987-07-15 1987-07-15 Semiconductor device and manufacture thereof
KR1019880005634A KR880014647A (en) 1987-05-15 1988-05-14 Semiconductor device and manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17623087A JPS6420640A (en) 1987-07-15 1987-07-15 Semiconductor device and manufacture thereof

Publications (2)

Publication Number Publication Date
JPS6420640A true JPS6420640A (en) 1989-01-24
JPH0587144B2 JPH0587144B2 (en) 1993-12-15

Family

ID=16009910

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17623087A Granted JPS6420640A (en) 1987-05-15 1987-07-15 Semiconductor device and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS6420640A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0371657A (en) * 1989-08-10 1991-03-27 Sanyo Electric Co Ltd Manufacture of semiconductor device
JPH04155823A (en) * 1990-10-18 1992-05-28 Matsushita Electron Corp Semiconductor device and manufacture thereof
JPH0526100U (en) * 1991-09-13 1993-04-06 吉村精機株式会社 Clothes wrinkle remover
JP2003075259A (en) * 2000-09-05 2003-03-12 Nikon Corp Thermal displacement element and radiation detection device using the same

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ES2356222B1 (en) 2011-02-15 2012-05-31 Sinterizados Y Metalurgia De Solsona, S.A. PROCEDURE FOR THE MANUFACTURE OF SINTERED SLIDING BEARINGS.

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4921461A (en) * 1972-04-19 1974-02-25
JPS56161670A (en) * 1980-05-16 1981-12-12 Hitachi Ltd Semiconductor device
JPS60117620A (en) * 1983-11-30 1985-06-25 Fujitsu Ltd Manufacture of semiconductor device
JPS6159856A (en) * 1984-08-31 1986-03-27 Fujitsu Ltd Manufacture of semiconductor device
JPS61170047A (en) * 1985-01-24 1986-07-31 Oki Electric Ind Co Ltd Manufacture of semiconductor device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4921461A (en) * 1972-04-19 1974-02-25
JPS56161670A (en) * 1980-05-16 1981-12-12 Hitachi Ltd Semiconductor device
JPS60117620A (en) * 1983-11-30 1985-06-25 Fujitsu Ltd Manufacture of semiconductor device
JPS6159856A (en) * 1984-08-31 1986-03-27 Fujitsu Ltd Manufacture of semiconductor device
JPS61170047A (en) * 1985-01-24 1986-07-31 Oki Electric Ind Co Ltd Manufacture of semiconductor device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0371657A (en) * 1989-08-10 1991-03-27 Sanyo Electric Co Ltd Manufacture of semiconductor device
JPH04155823A (en) * 1990-10-18 1992-05-28 Matsushita Electron Corp Semiconductor device and manufacture thereof
JPH0526100U (en) * 1991-09-13 1993-04-06 吉村精機株式会社 Clothes wrinkle remover
JP2003075259A (en) * 2000-09-05 2003-03-12 Nikon Corp Thermal displacement element and radiation detection device using the same
US6835932B2 (en) 2000-09-05 2004-12-28 Nikon Corporation Thermal displacement element and radiation detector using the element

Also Published As

Publication number Publication date
JPH0587144B2 (en) 1993-12-15

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees