JPS6412820A - Semiconductor integrated device - Google Patents

Semiconductor integrated device

Info

Publication number
JPS6412820A
JPS6412820A JP16904187A JP16904187A JPS6412820A JP S6412820 A JPS6412820 A JP S6412820A JP 16904187 A JP16904187 A JP 16904187A JP 16904187 A JP16904187 A JP 16904187A JP S6412820 A JPS6412820 A JP S6412820A
Authority
JP
Japan
Prior art keywords
emitter
input terminal
transistor
diode
collector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16904187A
Other languages
Japanese (ja)
Inventor
Norihide Kinugasa
Shigeru Yano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP16904187A priority Critical patent/JPS6412820A/en
Publication of JPS6412820A publication Critical patent/JPS6412820A/en
Pending legal-status Critical Current

Links

Landscapes

  • Emergency Protection Circuit Devices (AREA)

Abstract

PURPOSE:To materialize a protective circuit in a small chip area, by connecting an input terminal and an earth by a collector and an emitter of a transistor jointed with a diode between a base and the emitter. CONSTITUTION:A protective transistor Q1 is arranged between an external input terminal 2 of a semiconductor integrated device and an internal input terminal 4 of a general circuit 3 with its collector connected to the input terminal 2 and its emitter to an earthing terminal 5. A diode D1 is connected between a base and the emitter of the transistor Q1. Electrostatic energy applied to the external input terminal 2 is bypassed by taking advantage of a breakdown characteristic between the collector and emitter of the transistor 1. At this moment, by bypassing the leakage current to the diode D1, the yield can be prevented from being lowered because of the irregularity of the leakage current, and a small chip area will do for the purpose.
JP16904187A 1987-07-07 1987-07-07 Semiconductor integrated device Pending JPS6412820A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16904187A JPS6412820A (en) 1987-07-07 1987-07-07 Semiconductor integrated device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16904187A JPS6412820A (en) 1987-07-07 1987-07-07 Semiconductor integrated device

Publications (1)

Publication Number Publication Date
JPS6412820A true JPS6412820A (en) 1989-01-17

Family

ID=15879221

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16904187A Pending JPS6412820A (en) 1987-07-07 1987-07-07 Semiconductor integrated device

Country Status (1)

Country Link
JP (1) JPS6412820A (en)

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