JPS6414892A - Thin film el element - Google Patents

Thin film el element

Info

Publication number
JPS6414892A
JPS6414892A JP62171401A JP17140187A JPS6414892A JP S6414892 A JPS6414892 A JP S6414892A JP 62171401 A JP62171401 A JP 62171401A JP 17140187 A JP17140187 A JP 17140187A JP S6414892 A JPS6414892 A JP S6414892A
Authority
JP
Japan
Prior art keywords
film
layer
substrate
given thickness
vacuum
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62171401A
Other languages
Japanese (ja)
Inventor
Koji Matsunaga
Takao Toda
Atsushi Abe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP62171401A priority Critical patent/JPS6414892A/en
Publication of JPS6414892A publication Critical patent/JPS6414892A/en
Pending legal-status Critical Current

Links

Landscapes

  • Electroluminescent Light Sources (AREA)

Abstract

PURPOSE:To make a cost reduction of an EL element with a high reliable connection obtained by forming an In film on the extreme upper layer of an outer introduced part of a back plate of a thin film EL element. CONSTITUTION:A transparent substrate 3 is made a glass substrate, an ITO film is formed in a given thickness on the substrate 3 by a DC sputtering method, then a laminated film is processed in a stripe state, and a transparent electrode 5 in the stripe state is formed. Then the first dielectrics layer 6 having a given thickness is formed on the electrode 5 by sputtering, furthermore, an emitter layer 7 is formed on the layer 6 by coevaporation method. After that, a heat treatment is made for a given time in vacuum, the second dielectrics layer 8 is formed by the sputtering method, lastly Al is vacuum evaporated and a back plate 1 of a given thickness is formed. A formation region of the plate 1 is made a region which is larger than an effective display part and is not involved with an outer introduction part, a Ni film is formed as a substrate layer 9 of an exposed part, and an In film 4 is laminated successively on the extreme upper part by the vacuum evaporation.
JP62171401A 1987-07-09 1987-07-09 Thin film el element Pending JPS6414892A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62171401A JPS6414892A (en) 1987-07-09 1987-07-09 Thin film el element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62171401A JPS6414892A (en) 1987-07-09 1987-07-09 Thin film el element

Publications (1)

Publication Number Publication Date
JPS6414892A true JPS6414892A (en) 1989-01-19

Family

ID=15922469

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62171401A Pending JPS6414892A (en) 1987-07-09 1987-07-09 Thin film el element

Country Status (1)

Country Link
JP (1) JPS6414892A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130053708A1 (en) * 2011-08-29 2013-02-28 Welch Allyn, Inc. Blood pressure cuff

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130053708A1 (en) * 2011-08-29 2013-02-28 Welch Allyn, Inc. Blood pressure cuff

Similar Documents

Publication Publication Date Title
JPS6435421A (en) Thin film transistor array
JPS5472696A (en) Package for super miniature size piezoelectric oscillator
US5072152A (en) High brightness TFEL device and method of making same
JPS6438998A (en) Thin film el display element
JPS57118022A (en) Formation of zinc oxide film
CA2020856A1 (en) Composite oxide thin film
JPS6463297A (en) El element
JPS55105222A (en) Panel for display
JPS6414891A (en) Thin film el element
JPS6467893A (en) Manufacture of electroluminescence display panel
JPS6476736A (en) Manufacture of semiconductor device
JPS6484668A (en) Thin film transistor
JPS5752182A (en) Thin film transistor
JPS6411380A (en) Manufacture of josephson element
JPS6450392A (en) Manufacture of transparent thin film el element
JPS5752183A (en) Manufacture of thin film transistor
KR910004067A (en) Thin film EL display device and manufacturing method thereof
JPS5339864A (en) Production of semiconductor element electrode
JPS6459328A (en) Active device
JPS6479364A (en) Material having c-axis oriented bi2wo6 crystal film and production thereof
JPS6441197A (en) Thin film electroluminescent element
JPS55110222A (en) Electro-coloring element
JPS6484590A (en) Thin film el element
JPS5457889A (en) Electric field luminous device
JPS6410522A (en) Manufacture of oxide superconductor thin film