JPS6417432A - Etching method for semiconductor wafer - Google Patents

Etching method for semiconductor wafer

Info

Publication number
JPS6417432A
JPS6417432A JP17369087A JP17369087A JPS6417432A JP S6417432 A JPS6417432 A JP S6417432A JP 17369087 A JP17369087 A JP 17369087A JP 17369087 A JP17369087 A JP 17369087A JP S6417432 A JPS6417432 A JP S6417432A
Authority
JP
Japan
Prior art keywords
wafer
wax
etched
semiconductor wafer
etching method
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17369087A
Other languages
Japanese (ja)
Inventor
Yoshinobu Oyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP17369087A priority Critical patent/JPS6417432A/en
Publication of JPS6417432A publication Critical patent/JPS6417432A/en
Pending legal-status Critical Current

Links

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  • Weting (AREA)

Abstract

PURPOSE:To prevent a surface of a wafer from being distorted and scarred, by protecting a rear of a surface, which is required to be etched, from an etching solution at the time of etching. CONSTITUTION:A wafer 1 is stuck on a wafer sticking plate 2 by the use of wax 3. The whole of the plate 2, on which the wafer 1 is stuck by the use of the wax 3, is dipped into an etching solution 5 in a Petri dish 4 and etched, and next the wafer 1 is peeled from the plate 2. Since a rear of the wafer 1 is covered with the wax 3 and protected so that the etching solution 5 does not invade the rear of the wafer 1, the rear is not etched and dimensional precision is not deteriorated. The surface of the wafer 1 can be hence prevented from being distorted and scarred.
JP17369087A 1987-07-10 1987-07-10 Etching method for semiconductor wafer Pending JPS6417432A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17369087A JPS6417432A (en) 1987-07-10 1987-07-10 Etching method for semiconductor wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17369087A JPS6417432A (en) 1987-07-10 1987-07-10 Etching method for semiconductor wafer

Publications (1)

Publication Number Publication Date
JPS6417432A true JPS6417432A (en) 1989-01-20

Family

ID=15965302

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17369087A Pending JPS6417432A (en) 1987-07-10 1987-07-10 Etching method for semiconductor wafer

Country Status (1)

Country Link
JP (1) JPS6417432A (en)

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