JPS6473726A - Etching and manufacture of semiconductor device - Google Patents
Etching and manufacture of semiconductor deviceInfo
- Publication number
- JPS6473726A JPS6473726A JP22954087A JP22954087A JPS6473726A JP S6473726 A JPS6473726 A JP S6473726A JP 22954087 A JP22954087 A JP 22954087A JP 22954087 A JP22954087 A JP 22954087A JP S6473726 A JPS6473726 A JP S6473726A
- Authority
- JP
- Japan
- Prior art keywords
- etching
- layer
- specified
- depth
- processed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005530 etching Methods 0.000 title abstract 9
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 abstract 6
- 239000000463 material Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 1
- 238000001312 dry etching Methods 0.000 abstract 1
- 238000000295 emission spectrum Methods 0.000 abstract 1
- 229920002120 photoresistant polymer Polymers 0.000 abstract 1
Landscapes
- Semiconductor Lasers (AREA)
- Drying Of Semiconductors (AREA)
Abstract
PURPOSE:To specify the width of an active layer in the residual stripe part within a specific range of dimensional difference by a method wherein, when an etching process down to specified depth is performed in the specified region on the surface of an element to be processed, an etching terminal detecting layer previously containing the detected material is provided in the element to be processed. CONSTITUTION:When the surface region not covered with a photoresist film 2 of a substrate 1 comprising e.g. GaAs as elements to be processed is etched away in the specified depth by dryetching process, an etching terminal detecting layer 3 is previously provided by epitaxial growing process on the position corresponding to the etching depth of the substrate 1. If the etching process is terminated as soon as the layer 3 is detected after said procedures, the etching width and etching depth can be assured with specified dimensional precision enabling a semiconductor laser element etc., having stable characteristics to be manufactured. Furthermore, the etching terminal time of the layer 3 can be easily detected by containing Al etc., in the layer 3 as the detected material as well as detecting emission spectrum by a spectroscope etc.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22954087A JPS6473726A (en) | 1987-09-16 | 1987-09-16 | Etching and manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22954087A JPS6473726A (en) | 1987-09-16 | 1987-09-16 | Etching and manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6473726A true JPS6473726A (en) | 1989-03-20 |
Family
ID=16893769
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22954087A Pending JPS6473726A (en) | 1987-09-16 | 1987-09-16 | Etching and manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6473726A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7382814B2 (en) | 2005-08-08 | 2008-06-03 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor laser device and method of manufacturing the same |
| JP2012084592A (en) * | 2010-10-07 | 2012-04-26 | Sumitomo Electric Ind Ltd | Method of manufacturing optical semiconductor element |
| US9184566B2 (en) | 2013-12-24 | 2015-11-10 | Mitsubishi Electric Corporation | Method for manufacturing semiconductor laser element |
-
1987
- 1987-09-16 JP JP22954087A patent/JPS6473726A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7382814B2 (en) | 2005-08-08 | 2008-06-03 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor laser device and method of manufacturing the same |
| JP2012084592A (en) * | 2010-10-07 | 2012-04-26 | Sumitomo Electric Ind Ltd | Method of manufacturing optical semiconductor element |
| US9184566B2 (en) | 2013-12-24 | 2015-11-10 | Mitsubishi Electric Corporation | Method for manufacturing semiconductor laser element |
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