JPS6419731A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS6419731A JPS6419731A JP17471887A JP17471887A JPS6419731A JP S6419731 A JPS6419731 A JP S6419731A JP 17471887 A JP17471887 A JP 17471887A JP 17471887 A JP17471887 A JP 17471887A JP S6419731 A JPS6419731 A JP S6419731A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- resist
- type
- epitaxially grown
- inp
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 238000005530 etching Methods 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 abstract 1
- 238000004140 cleaning Methods 0.000 abstract 1
- 229910017604 nitric acid Inorganic materials 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Landscapes
- Weting (AREA)
Abstract
PURPOSE:To prevent an epitaxial layer from being contamated with a resist by a method wherein at least one layer, which constitutes no element, is formed on the surface of the epitaxial layer constituting an element, a resist having a necessary pattern is formed thereon, an element forming process is conducted, and then the resist and the epitaxial layer, which constitutes no element, are removed by etching. CONSTITUTION:An InGaAsP active layer 2 is epitaxially grown on a P-type InP substrate 1, and then a P-type InP clad layer 3 and a P-type InGaAd cap layer 4 are epitaxially grown. Besides, InP layer 5, which does not constitute in LED, is epitaxially grown thereon. Then, a resist 6 is coated on the above- mentioned layer 5, exposing and developing operations are conducted, and the resist 6 is patterned. A groove 7 is formed by etching using said resist 6 as a mask. Subsequently, the resist 6 is removed by conducting organic cleaning, the InP layer 5 is removed with hot nitric acid, and the clean surface of the P-type InGaAsP cap layer 4 is obtained.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17471887A JPS6419731A (en) | 1987-07-15 | 1987-07-15 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17471887A JPS6419731A (en) | 1987-07-15 | 1987-07-15 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6419731A true JPS6419731A (en) | 1989-01-23 |
Family
ID=15983434
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17471887A Pending JPS6419731A (en) | 1987-07-15 | 1987-07-15 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6419731A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08316219A (en) * | 1995-05-19 | 1996-11-29 | Nec Corp | Manufacture of semiconductor device |
-
1987
- 1987-07-15 JP JP17471887A patent/JPS6419731A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08316219A (en) * | 1995-05-19 | 1996-11-29 | Nec Corp | Manufacture of semiconductor device |
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