JPS6421977A - Magnetoresistance element - Google Patents

Magnetoresistance element

Info

Publication number
JPS6421977A
JPS6421977A JP62177507A JP17750787A JPS6421977A JP S6421977 A JPS6421977 A JP S6421977A JP 62177507 A JP62177507 A JP 62177507A JP 17750787 A JP17750787 A JP 17750787A JP S6421977 A JPS6421977 A JP S6421977A
Authority
JP
Japan
Prior art keywords
layer
parts
layers
film layer
nitride
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62177507A
Other languages
Japanese (ja)
Inventor
Yuji Kojima
Michiko Endou
Shinkichi Shimizu
Shigemi Kurashima
Noboru Wakatsuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP62177507A priority Critical patent/JPS6421977A/en
Publication of JPS6421977A publication Critical patent/JPS6421977A/en
Pending legal-status Critical Current

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  • Hall/Mr Elements (AREA)

Abstract

PURPOSE:To bring the heat to be applied to a ferromagnetic metal into low temperature and to contrive the improvement of a moisture absorption resistance and a reduction in a mechanical strain by a method wherein the exposed parts of an insulating layer, a magnetic thin film layer and conducting layers are covered with a protective film layer consisting of Si nitride excepting parts which are used as external connecting parts. CONSTITUTION:An Si single crystal wafer or a glass plate is used as a substrate 1 and an insulating layer 2, which is formed on the substrate 1 and consists of SiO2 and so on, a magnetic thin film layer 3, which is formed on the layer 2 and consists of a permalloy, and conducting layers 5, which are formed on the layer 3 and consist of gold and so on, are provided. The exposed parts of the layers 2, 3 and 5 are covered with a protective film layer 7 consisting of Si nitride excepting parts which are used as external connecting parts. For example, the layers 5 are adhered on parts of the layer 3 having a meandering pattern through adhesive layers 4 consisting of Ti, Cr and so on and the exposed parts of the layers 2, 3 and 5 are covered with the layer 7, which is formed by a plasma CVD method consists of Si nitride.
JP62177507A 1987-07-16 1987-07-16 Magnetoresistance element Pending JPS6421977A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62177507A JPS6421977A (en) 1987-07-16 1987-07-16 Magnetoresistance element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62177507A JPS6421977A (en) 1987-07-16 1987-07-16 Magnetoresistance element

Publications (1)

Publication Number Publication Date
JPS6421977A true JPS6421977A (en) 1989-01-25

Family

ID=16032115

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62177507A Pending JPS6421977A (en) 1987-07-16 1987-07-16 Magnetoresistance element

Country Status (1)

Country Link
JP (1) JPS6421977A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03263886A (en) * 1990-03-14 1991-11-25 Fujitsu Ltd Magnetic resistance element and manufacture thereof
JPH0715054A (en) * 1993-06-23 1995-01-17 Nec Corp Magneto-resistance element

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03263886A (en) * 1990-03-14 1991-11-25 Fujitsu Ltd Magnetic resistance element and manufacture thereof
JPH0715054A (en) * 1993-06-23 1995-01-17 Nec Corp Magneto-resistance element

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