JPS6422028A - Forming method for pattern - Google Patents

Forming method for pattern

Info

Publication number
JPS6422028A
JPS6422028A JP62178676A JP17867687A JPS6422028A JP S6422028 A JPS6422028 A JP S6422028A JP 62178676 A JP62178676 A JP 62178676A JP 17867687 A JP17867687 A JP 17867687A JP S6422028 A JPS6422028 A JP S6422028A
Authority
JP
Japan
Prior art keywords
region
resist
type photo
exposure
positive type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62178676A
Other languages
Japanese (ja)
Inventor
Shoji Hirata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP62178676A priority Critical patent/JPS6422028A/en
Publication of JPS6422028A publication Critical patent/JPS6422028A/en
Pending legal-status Critical Current

Links

Landscapes

  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Semiconductor Lasers (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Diffracting Gratings Or Hologram Optical Elements (AREA)

Abstract

PURPOSE:To use a positive type photo-resist even as a negative type photo-resist by applying the positive type photo-resist onto a substrate, conducting the exposure of a desired pattern, performing proper whole surface exposure in a specified region in the positive type photo-resist again and executing developing treatment to the state. CONSTITUTION:A positive type photo-resist layer 12 is applied and formed onto the surface of a semiconductor substrate 11, and diffraction grating exposure 13 is conducted extending over the whole region. Intense whole surface exposure 16 is performed selectively to a required region 15 to be flatly etched through a mask 14 through a normal photolithographic technique, and whole surface exposure 19 is executed weakly to a region 18. The developing time is controlled by using a method such as a diffraction grating monitor, and the whole surface-exposed region 18 is developed up to the proper quantity of development. Selective etching is conducted, employing the resist layers 21a, 21b as masks. Accordingly, a flat etching groove 22 is shaped in the region 15, a diffraction grating 1 in the region 18 and a flat surface 23 not etched in a region 20.
JP62178676A 1987-07-17 1987-07-17 Forming method for pattern Pending JPS6422028A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62178676A JPS6422028A (en) 1987-07-17 1987-07-17 Forming method for pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62178676A JPS6422028A (en) 1987-07-17 1987-07-17 Forming method for pattern

Publications (1)

Publication Number Publication Date
JPS6422028A true JPS6422028A (en) 1989-01-25

Family

ID=16052609

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62178676A Pending JPS6422028A (en) 1987-07-17 1987-07-17 Forming method for pattern

Country Status (1)

Country Link
JP (1) JPS6422028A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5285343A (en) * 1989-10-13 1994-02-08 Hitachi, Ltd. Magnetic disk with surface protective layer having convex portions and magnetic disk apparatus including such a magnetic disk
JPH08338918A (en) * 1995-04-12 1996-12-24 Sumitomo Electric Ind Ltd Method and apparatus for producing optical waveguide type diffraction grating
JP2013016650A (en) * 2011-07-04 2013-01-24 Sumitomo Electric Ind Ltd Formation method of sampled grating and manufacturing method of semiconductor laser

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5285343A (en) * 1989-10-13 1994-02-08 Hitachi, Ltd. Magnetic disk with surface protective layer having convex portions and magnetic disk apparatus including such a magnetic disk
JPH08338918A (en) * 1995-04-12 1996-12-24 Sumitomo Electric Ind Ltd Method and apparatus for producing optical waveguide type diffraction grating
JP2013016650A (en) * 2011-07-04 2013-01-24 Sumitomo Electric Ind Ltd Formation method of sampled grating and manufacturing method of semiconductor laser

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