JPS6489435A - Dissolution removing method of resist - Google Patents
Dissolution removing method of resistInfo
- Publication number
- JPS6489435A JPS6489435A JP24380987A JP24380987A JPS6489435A JP S6489435 A JPS6489435 A JP S6489435A JP 24380987 A JP24380987 A JP 24380987A JP 24380987 A JP24380987 A JP 24380987A JP S6489435 A JPS6489435 A JP S6489435A
- Authority
- JP
- Japan
- Prior art keywords
- resist
- substrate
- liquid
- component
- pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004090 dissolution Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000007788 liquid Substances 0.000 abstract 4
- 239000000758 substrate Substances 0.000 abstract 4
- 238000005530 etching Methods 0.000 abstract 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical group F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 abstract 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 2
- 229960002050 hydrofluoric acid Drugs 0.000 abstract 2
- 229910052760 oxygen Inorganic materials 0.000 abstract 2
- 239000001301 oxygen Substances 0.000 abstract 2
- 239000010409 thin film Substances 0.000 abstract 2
Landscapes
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
PURPOSE:To obtain a clean substrate without a residual resist component, by projecting ultraviolet rays in an atmosphere including oxygen, treating the surface with etching liquid, whose main component is fluoric acid, and thereafter performing resist releasing treatment. CONSTITUTION:A resist pattern 6 is formed on a substrate by developing a sample with developing liquid. Thereafter, the resist pattern 6 is used as a mask, etching beams 7 are projected, and a thin film 2 is etched. A thin film pattern 8 is formed on the substrate 1. At the same time, an affected layer 9 is formed on the resist 6. Then, ultraviolet rays 10 are projected in an atmosphere including oxygen. The affected layer 9 is made to be a reformed layer 11. The reformed layer 11 is removed with etching liquid 12, whose main component is fluoric acid. The resist pattern 6 is removed by using ordinary resist releasing liquid 13. Thus the clean substrate without a residual resist component can be obtained.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24380987A JPS6489435A (en) | 1987-09-30 | 1987-09-30 | Dissolution removing method of resist |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24380987A JPS6489435A (en) | 1987-09-30 | 1987-09-30 | Dissolution removing method of resist |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6489435A true JPS6489435A (en) | 1989-04-03 |
Family
ID=17109256
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP24380987A Pending JPS6489435A (en) | 1987-09-30 | 1987-09-30 | Dissolution removing method of resist |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6489435A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0795895A3 (en) * | 1996-03-07 | 1998-12-02 | Nec Corporation | Semiconductor device with a plurality of stacked wiring layers and manufacturing method of the same |
-
1987
- 1987-09-30 JP JP24380987A patent/JPS6489435A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0795895A3 (en) * | 1996-03-07 | 1998-12-02 | Nec Corporation | Semiconductor device with a plurality of stacked wiring layers and manufacturing method of the same |
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