JPS6422067U - - Google Patents

Info

Publication number
JPS6422067U
JPS6422067U JP11696287U JP11696287U JPS6422067U JP S6422067 U JPS6422067 U JP S6422067U JP 11696287 U JP11696287 U JP 11696287U JP 11696287 U JP11696287 U JP 11696287U JP S6422067 U JPS6422067 U JP S6422067U
Authority
JP
Japan
Prior art keywords
light
semiconductor
laser device
detection
semiconductor laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11696287U
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP11696287U priority Critical patent/JPS6422067U/ja
Publication of JPS6422067U publication Critical patent/JPS6422067U/ja
Pending legal-status Critical Current

Links

Landscapes

  • Optical Head (AREA)

Description

【図面の簡単な説明】
第1図は本考案の半導体レーザ装置の一実施例
を示す斜視図、第2図はボンデング方法を示す要
部斜視図、第3図は本考案の半導体レーザ装置を
光学ヘツドに適用した場合の模式的な一部を断面
とする側面図、第4図は従来の半導体レーザ装置
の斜視図、第5図は従来の出射レーザビームを示
す半導体レーザ装置の一部を断面とする側面図で
ある。 2は半導体基板、5はレーザ半導体素子、9は
遮蔽部材、10はプリント基板、11はワイヤ、
12は中継電極である。

Claims (1)

  1. 【実用新案登録請求の範囲】 半導体基板上に形成された第1及び第2の光検
    出手段と、該第1の光検出手段の受光面に接して
    配設された半透過反射面を有する光路設定用プリ
    ズムと、該半透過反射面及び第2の光検出手段に
    信号検出用及び光出力検出用のレーザビームを個
    別に出射するレーザ半導体素子とから成る半導体
    レーザ装置に於いて、 上記第2の光検出手段上に光遮蔽部材を配設し
    て成る半導体レーザ装置。
JP11696287U 1987-07-30 1987-07-30 Pending JPS6422067U (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11696287U JPS6422067U (ja) 1987-07-30 1987-07-30

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11696287U JPS6422067U (ja) 1987-07-30 1987-07-30

Publications (1)

Publication Number Publication Date
JPS6422067U true JPS6422067U (ja) 1989-02-03

Family

ID=31359969

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11696287U Pending JPS6422067U (ja) 1987-07-30 1987-07-30

Country Status (1)

Country Link
JP (1) JPS6422067U (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7180106B2 (en) 2001-04-04 2007-02-20 Mitsubishi Denki Kabushiki Kaisha Semiconductor device having enhanced di/dt tolerance and dV/dt tolerance

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7180106B2 (en) 2001-04-04 2007-02-20 Mitsubishi Denki Kabushiki Kaisha Semiconductor device having enhanced di/dt tolerance and dV/dt tolerance

Similar Documents

Publication Publication Date Title
CA2006001A1 (en) Method of mounting laser diode unit
JPS63157969U (ja)
JPS61151362U (ja)
JPS61151366U (ja)
JPS63169552U (ja)
JPH0262755U (ja)
JPS63193874U (ja)
JPS6448712U (ja)
JPH0235006U (ja)
JPH0221761U (ja)
JPS61161639U (ja)
JPS6157313U (ja)
JPS6169857U (ja)
JPS63155055U (ja)
JPH0229551U (ja)
JPS6194368U (ja)
JPH01158912U (ja)
JPH0467367U (ja)
JPS6121915U (ja) 照射装置
JPH0270263U (ja)
JPS63188593U (ja)
JPS6184812U (ja)
JPS6420341U (ja)
JPH0390007U (ja)
JPS5828613U (ja) レ−ザ照射装置