JPS6423521A - Protective film for recrystallization treatment - Google Patents

Protective film for recrystallization treatment

Info

Publication number
JPS6423521A
JPS6423521A JP17909687A JP17909687A JPS6423521A JP S6423521 A JPS6423521 A JP S6423521A JP 17909687 A JP17909687 A JP 17909687A JP 17909687 A JP17909687 A JP 17909687A JP S6423521 A JPS6423521 A JP S6423521A
Authority
JP
Japan
Prior art keywords
film
region
recrystallized
semiconductor layer
recrystallization
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17909687A
Other languages
Japanese (ja)
Inventor
Tamotsu Kimura
Nagayasu Yamagishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP17909687A priority Critical patent/JPS6423521A/en
Publication of JPS6423521A publication Critical patent/JPS6423521A/en
Pending legal-status Critical Current

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  • Recrystallisation Techniques (AREA)

Abstract

PURPOSE:To arbitrarily and finely control a temperature distribution of a semiconductor layer suitable for recrystallization by a method wherein a protective film is formed by an insulating film which has been formed with a specific thickness distribution and by a tungsten film having a uniform film thickness. CONSTITUTION:The following are formed on a semiconductor layer 36 as a protective film 38 for recrystallization use: an insulating film 40 whose film thickness on a region 36a to be recrystallized of the semiconductor layer 36 is treated to be thinner than a film thickness on a region excluding the region, i.e. on a region 36b not to be recrystallized; a tungsten film 42 having a uniform film thickness. It is possible to control a temperature distribution of the semiconductor layer to be recrystallized by scanning an energy beam due to a change in the film thickness at a thin-film part and a thick-film part. Accordingly, it is possible to arbitrarily control the region to be recrystallized by making use of the region of the thin-film part in the protective film. In addition, because it is possible to obtain a large temperature gradient at a stepped part produced by an etching operation of the insulating film, it is possible to substantially suppress the growth of a microscopic grain from the circumference which prevents the good recrystallization.
JP17909687A 1987-07-20 1987-07-20 Protective film for recrystallization treatment Pending JPS6423521A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17909687A JPS6423521A (en) 1987-07-20 1987-07-20 Protective film for recrystallization treatment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17909687A JPS6423521A (en) 1987-07-20 1987-07-20 Protective film for recrystallization treatment

Publications (1)

Publication Number Publication Date
JPS6423521A true JPS6423521A (en) 1989-01-26

Family

ID=16059975

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17909687A Pending JPS6423521A (en) 1987-07-20 1987-07-20 Protective film for recrystallization treatment

Country Status (1)

Country Link
JP (1) JPS6423521A (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5853823A (en) * 1981-09-26 1983-03-30 Fujitsu Ltd Manufacture of semiconductor device
JPS6015915A (en) * 1983-07-08 1985-01-26 Hitachi Ltd Manufacture of semiconductor substrate
JPS60229330A (en) * 1984-04-27 1985-11-14 Hitachi Ltd Manufacturing method of semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5853823A (en) * 1981-09-26 1983-03-30 Fujitsu Ltd Manufacture of semiconductor device
JPS6015915A (en) * 1983-07-08 1985-01-26 Hitachi Ltd Manufacture of semiconductor substrate
JPS60229330A (en) * 1984-04-27 1985-11-14 Hitachi Ltd Manufacturing method of semiconductor device

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