JPS642361A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS642361A JPS642361A JP62158281A JP15828187A JPS642361A JP S642361 A JPS642361 A JP S642361A JP 62158281 A JP62158281 A JP 62158281A JP 15828187 A JP15828187 A JP 15828187A JP S642361 A JPS642361 A JP S642361A
- Authority
- JP
- Japan
- Prior art keywords
- film
- type
- base region
- impurity
- internal base
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Bipolar Transistors (AREA)
Abstract
PURPOSE: To improve the reliability of a transistor, and to enhance yield on production by diffusing an impurity from a film containing the impurity to the side face of a stepped section formed when a window is bored and connecting an external base and an internal base in the manufacture of a semiconductor device.
CONSTITUTION: An n-type buried layer is thermally diffused to a p-type silicon substrate, an n-type epitaxial layer is grown, an n-type collector region 3 is set, and a field insulating film 2 is shaped through selective oxidation. Boron is implanted to the top face of the field insulating film 2, and a p-type polycrystalline silicon film 4 (a base leading-out electrode) is formed. An SiO2 film 8 is applied onto the top face of the film 4, an external base region 5 is demarcated through beat treatment, the film 8, 4 on an internal base region are reacted by a chlorine gas, and a window W is bored. A boron organic film 20 is etched vertically at that time, an SiO2 film 10 is applied onto the film 20 left on the side face of the stepped section of the film W. Ions for shaping the internal base region are implanted, the internal base region is formed through heat treatment, and an impurity is diffused simultaneously to the stepped section from the film 20.
COPYRIGHT: (C)1989,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62158281A JPH0831468B2 (en) | 1987-06-24 | 1987-06-24 | Method for manufacturing semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62158281A JPH0831468B2 (en) | 1987-06-24 | 1987-06-24 | Method for manufacturing semiconductor device |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPS642361A true JPS642361A (en) | 1989-01-06 |
| JPH012361A JPH012361A (en) | 1989-01-06 |
| JPH0831468B2 JPH0831468B2 (en) | 1996-03-27 |
Family
ID=15668169
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62158281A Expired - Fee Related JPH0831468B2 (en) | 1987-06-24 | 1987-06-24 | Method for manufacturing semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0831468B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0758120A (en) * | 1993-08-11 | 1995-03-03 | Nec Corp | Semiconductor device and manufacturing method thereof |
| WO1999052138A1 (en) * | 1998-04-08 | 1999-10-14 | Aeroflex Utmc Microelectronic Systems Inc. | A bipolar transistor having low extrinsic base resistance |
-
1987
- 1987-06-24 JP JP62158281A patent/JPH0831468B2/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0758120A (en) * | 1993-08-11 | 1995-03-03 | Nec Corp | Semiconductor device and manufacturing method thereof |
| WO1999052138A1 (en) * | 1998-04-08 | 1999-10-14 | Aeroflex Utmc Microelectronic Systems Inc. | A bipolar transistor having low extrinsic base resistance |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0831468B2 (en) | 1996-03-27 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |