JPS6431460A - Manufacture of bipolar transistor - Google Patents

Manufacture of bipolar transistor

Info

Publication number
JPS6431460A
JPS6431460A JP62188025A JP18802587A JPS6431460A JP S6431460 A JPS6431460 A JP S6431460A JP 62188025 A JP62188025 A JP 62188025A JP 18802587 A JP18802587 A JP 18802587A JP S6431460 A JPS6431460 A JP S6431460A
Authority
JP
Japan
Prior art keywords
region
type
base
impurity
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62188025A
Other languages
Japanese (ja)
Other versions
JP2625741B2 (en
Inventor
Takayuki Gomi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP62188025A priority Critical patent/JP2625741B2/en
Publication of JPS6431460A publication Critical patent/JPS6431460A/en
Application granted granted Critical
Publication of JP2625741B2 publication Critical patent/JP2625741B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To effectively connect a base active region to a base leading region while reducing (shallow junction) the depth of a base junction by forming a second conductivity type second impurity region except an active region, and then forming a second conductivity type third impurity region in contact with the second conductivity type second impurity region. CONSTITUTION:An N<+> type buried layer 22 is formed on a P-type semiconductor substrate 21, and an N-type insular region 23 is formed thereon. Then, a base leading electrode 26 is formed thereon, covered with an insulating film 27, and an opening 28 is formed. Thereafter, after a BSG film 29 having a P-type impurity is formed on a whole surface, a sidewall 30 is formed on the sidewall of the opening 28, an oxide film 31 is formed on the exposed insular region 23, a P-type graft base region 32 is formed, and a P-type connecting low concentration impurity region 33 is simultaneously formed. Subsequently, the film 31 is etched to form a thin polycrystalline silicon layer 34 on a whole surface including the surface of the exposed region 23, P-type impurity is implanted, annealed to diffuse it in the region 23 to form a P-type base active region 35 on the active region. Accordingly, a connection from the region 32 to the region 35 is effectively performed.
JP62188025A 1987-07-28 1987-07-28 Manufacturing method of bipolar transistor Expired - Lifetime JP2625741B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62188025A JP2625741B2 (en) 1987-07-28 1987-07-28 Manufacturing method of bipolar transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62188025A JP2625741B2 (en) 1987-07-28 1987-07-28 Manufacturing method of bipolar transistor

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP8351100A Division JPH09181084A (en) 1996-12-27 1996-12-27 Manufacturing method of bipolar transistor

Publications (2)

Publication Number Publication Date
JPS6431460A true JPS6431460A (en) 1989-02-01
JP2625741B2 JP2625741B2 (en) 1997-07-02

Family

ID=16216344

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62188025A Expired - Lifetime JP2625741B2 (en) 1987-07-28 1987-07-28 Manufacturing method of bipolar transistor

Country Status (1)

Country Link
JP (1) JP2625741B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5010026A (en) * 1988-08-12 1991-04-23 Sony Corporation Process for making bipolar transistor
EP0724297A1 (en) * 1995-01-30 1996-07-31 Texas Instruments Incorporated Transistor base contact

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61290761A (en) * 1985-06-19 1986-12-20 Matsushita Electric Ind Co Ltd Manufacturing method of semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61290761A (en) * 1985-06-19 1986-12-20 Matsushita Electric Ind Co Ltd Manufacturing method of semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5010026A (en) * 1988-08-12 1991-04-23 Sony Corporation Process for making bipolar transistor
EP0724297A1 (en) * 1995-01-30 1996-07-31 Texas Instruments Incorporated Transistor base contact

Also Published As

Publication number Publication date
JP2625741B2 (en) 1997-07-02

Similar Documents

Publication Publication Date Title
US3955269A (en) Fabricating high performance integrated bipolar and complementary field effect transistors
US4160991A (en) High performance bipolar device and method for making same
US4507171A (en) Method for contacting a narrow width PN junction region
US4236294A (en) High performance bipolar device and method for making same
US4016596A (en) High performance integrated bipolar and complementary field effect transistors
JPS55128869A (en) Semiconductor device and method of fabricating the same
US4408387A (en) Method for producing a bipolar transistor utilizing an oxidized semiconductor masking layer in conjunction with an anti-oxidation mask
JPS6489365A (en) Semiconductor device
US5024956A (en) Method of manufacturing a semiconductor device including mesa bipolar transistor with edge contacts
JPS6431460A (en) Manufacture of bipolar transistor
US4675983A (en) Method of making a semiconductor including forming graft/extrinsic and intrinsic base regions
JPS6431461A (en) Manufacture of bipolar transistor
JPS5687360A (en) Transistor device
JPS6453454A (en) Bipolar transistor and manufacture thereof
JPS6415974A (en) Semiconductor device
JPS5676563A (en) Manufacture of semiconductor integrated circuit
JP3128818B2 (en) Semiconductor integrated circuit
JPS6453452A (en) Manufacture of semiconductor integrated circuit device
JPS6431434A (en) Semiconductor integrated circuit
KR910005476A (en) Manufacturing Method of NPN Transistor for Horizontal Operation
JPS6489364A (en) Manufacture of bipolar semiconductor integrated circuit device
JPS6490562A (en) Manufacture of semiconductor storage device
JPS6266672A (en) semiconductor equipment
JPS642317A (en) Manufacture of semiconductor device
JPS6490552A (en) Semiconductor integrated circuit device

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term
FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20080411

Year of fee payment: 11