JPS642377A - Photosensor - Google Patents

Photosensor

Info

Publication number
JPS642377A
JPS642377A JP62159123A JP15912387A JPS642377A JP S642377 A JPS642377 A JP S642377A JP 62159123 A JP62159123 A JP 62159123A JP 15912387 A JP15912387 A JP 15912387A JP S642377 A JPS642377 A JP S642377A
Authority
JP
Japan
Prior art keywords
film
capacitor
semiconductor thin
thin
type semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62159123A
Other languages
English (en)
Other versions
JPH012377A (ja
Inventor
Toshiichi Maekawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP62159123A priority Critical patent/JPS642377A/ja
Publication of JPH012377A publication Critical patent/JPH012377A/ja
Publication of JPS642377A publication Critical patent/JPS642377A/ja
Priority to US07/442,406 priority patent/US4972252A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/103—Integrated devices the at least one element covered by H10F30/00 having potential barriers, e.g. integrated devices comprising photodiodes or phototransistors

Landscapes

  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP62159123A 1987-06-25 1987-06-25 Photosensor Pending JPS642377A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP62159123A JPS642377A (en) 1987-06-25 1987-06-25 Photosensor
US07/442,406 US4972252A (en) 1987-06-25 1989-11-28 Photosensor with a capacitor connected in parallel so as to increase the dynamic range and to improve the holding characteristics of the photosensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62159123A JPS642377A (en) 1987-06-25 1987-06-25 Photosensor

Publications (2)

Publication Number Publication Date
JPH012377A JPH012377A (ja) 1989-01-06
JPS642377A true JPS642377A (en) 1989-01-06

Family

ID=15686737

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62159123A Pending JPS642377A (en) 1987-06-25 1987-06-25 Photosensor

Country Status (2)

Country Link
US (1) US4972252A (ja)
JP (1) JPS642377A (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7687873B2 (en) 2006-11-14 2010-03-30 Oki Electric Industry Co., Ltd. Photodiode and photo integrated circuit having the same
US8217361B2 (en) 2007-09-21 2012-07-10 Oki Semiconductor Co., Ltd. Ultraviolet sensor

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06314779A (ja) * 1993-04-28 1994-11-08 Nec Corp イメージセンサ
US5629517A (en) * 1995-04-17 1997-05-13 Xerox Corporation Sensor element array having overlapping detection zones
US7030551B2 (en) * 2000-08-10 2006-04-18 Semiconductor Energy Laboratory Co., Ltd. Area sensor and display apparatus provided with an area sensor
US6980414B1 (en) 2004-06-16 2005-12-27 Marvell International, Ltd. Capacitor structure in a semiconductor device
US8144115B2 (en) 2006-03-17 2012-03-27 Konicek Jeffrey C Flat panel display screen operable for touch position determination system and methods
US7859526B2 (en) 2006-05-01 2010-12-28 Konicek Jeffrey C Active matrix emissive display and optical scanner system, methods and applications
US7709920B2 (en) * 2006-11-14 2010-05-04 Oki Semiconductor Co., Ltd. Photodiode arrangement
KR101588299B1 (ko) * 2009-01-20 2016-01-25 삼성전자주식회사 수광량에 대한 실시간 모니터링이 가능한 4-Ｔｒ 타입의 ＡＦ 픽셀을 이용한 ＡＦ 모듈 및 이를 적용한 촬영장치
CN102725961B (zh) * 2010-01-15 2017-10-13 株式会社半导体能源研究所 半导体器件和电子设备

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4717946A (en) * 1983-04-20 1988-01-05 Applied Solar Energy Corporation Thin line junction photodiode
EP0162307A3 (en) * 1984-04-24 1988-07-27 Hitachi, Ltd. Image sensor and method of manufacturing same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7687873B2 (en) 2006-11-14 2010-03-30 Oki Electric Industry Co., Ltd. Photodiode and photo integrated circuit having the same
US8217361B2 (en) 2007-09-21 2012-07-10 Oki Semiconductor Co., Ltd. Ultraviolet sensor

Also Published As

Publication number Publication date
US4972252A (en) 1990-11-20

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