JPS6425419A - Etching - Google Patents
EtchingInfo
- Publication number
- JPS6425419A JPS6425419A JP62181506A JP18150687A JPS6425419A JP S6425419 A JPS6425419 A JP S6425419A JP 62181506 A JP62181506 A JP 62181506A JP 18150687 A JP18150687 A JP 18150687A JP S6425419 A JPS6425419 A JP S6425419A
- Authority
- JP
- Japan
- Prior art keywords
- etching
- gas
- opening
- organic film
- etched
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Drying Of Semiconductors (AREA)
Abstract
PURPOSE:To perform anisotropic etching which is lacking in crosswise etching treatment and form a reproducible fine pattern by adding a hydrocarbon gas in an oxygen gas and by etching an organic film in the plasma of the above mixed gas. CONSTITUTION:A resist 4 is formed on a silicon oxide film 3 and the first opening 5 is formed through ordinary exposure and development process. The resist 4 is used as a mask and a silicon oxide film 3 is etched by performing reactive ion-etching with a CHF3 gas and then, the second opening 6 is formed. After using a mixed gas consisting of oxygen, a hydrocarbon gas, for example, CH4 gas, the third opening 7 is formed by etching an organic film 2 through a process of reactive ion-etching. In such a case, since the organic film 2 is etched while forming always a thin film of CHx at the side walls with the hydrocarbon gas in an etching gas, it is treated by anisotropic etching.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62181506A JPS6425419A (en) | 1987-07-21 | 1987-07-21 | Etching |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62181506A JPS6425419A (en) | 1987-07-21 | 1987-07-21 | Etching |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6425419A true JPS6425419A (en) | 1989-01-27 |
Family
ID=16101953
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62181506A Pending JPS6425419A (en) | 1987-07-21 | 1987-07-21 | Etching |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6425419A (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5405521A (en) * | 1992-12-02 | 1995-04-11 | Nippondenso Co., Ltd. | Oxygen concentration measuring device |
| WO2000067308A1 (en) | 1999-05-05 | 2000-11-09 | Lam Research Corporation | Techniques for etching a low capacitance dielectric layer |
| US6518191B2 (en) | 2000-05-26 | 2003-02-11 | Matsushita Electric Industrial Co., Ltd. | Method for etching organic film, method for fabricating semiconductor device and pattern formation method |
| US6531402B2 (en) | 2000-05-26 | 2003-03-11 | Matsushita Electric Industrial Co., Ltd. | Method for etching organic film, method for fabricating semiconductor device and pattern formation method |
| WO2002065530A3 (en) * | 2001-02-12 | 2003-05-15 | Lam Res Corp | Use of hydrocarbon addition for the elimination of micromasking during etching of organic low-k dielectrics |
| US6777344B2 (en) | 2001-02-12 | 2004-08-17 | Lam Research Corporation | Post-etch photoresist strip with O2 and NH3 for organosilicate glass low-K dielectric etch applications |
| US6828247B2 (en) | 2000-05-26 | 2004-12-07 | Matsushita Electric Industrial Co., Ltd. | Method for etching organic film, method for fabricating semiconductor device and pattern formation method |
| JP2007273866A (en) * | 2006-03-31 | 2007-10-18 | Tokyo Electron Ltd | Etching method, plasma processing apparatus, storage medium |
| US8177990B2 (en) | 2006-03-31 | 2012-05-15 | Tokyo Electron Limited | Etching method, plasma processing system and storage medium |
-
1987
- 1987-07-21 JP JP62181506A patent/JPS6425419A/en active Pending
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5405521A (en) * | 1992-12-02 | 1995-04-11 | Nippondenso Co., Ltd. | Oxygen concentration measuring device |
| US6696366B1 (en) | 1998-08-17 | 2004-02-24 | Lam Research Corporation | Technique for etching a low capacitance dielectric layer |
| WO2000067308A1 (en) | 1999-05-05 | 2000-11-09 | Lam Research Corporation | Techniques for etching a low capacitance dielectric layer |
| JP2002543613A (en) * | 1999-05-05 | 2002-12-17 | ラム・リサーチ・コーポレーション | Techniques for etching low capacitance dielectric layers |
| KR100778259B1 (en) * | 1999-05-05 | 2007-11-22 | 램 리써치 코포레이션 | Low capacitance dielectric layer etching technology |
| US6828247B2 (en) | 2000-05-26 | 2004-12-07 | Matsushita Electric Industrial Co., Ltd. | Method for etching organic film, method for fabricating semiconductor device and pattern formation method |
| US6531402B2 (en) | 2000-05-26 | 2003-03-11 | Matsushita Electric Industrial Co., Ltd. | Method for etching organic film, method for fabricating semiconductor device and pattern formation method |
| US6518191B2 (en) | 2000-05-26 | 2003-02-11 | Matsushita Electric Industrial Co., Ltd. | Method for etching organic film, method for fabricating semiconductor device and pattern formation method |
| US6620733B2 (en) | 2001-02-12 | 2003-09-16 | Lam Research Corporation | Use of hydrocarbon addition for the elimination of micromasking during etching of organic low-k dielectrics |
| WO2002065530A3 (en) * | 2001-02-12 | 2003-05-15 | Lam Res Corp | Use of hydrocarbon addition for the elimination of micromasking during etching of organic low-k dielectrics |
| US6777344B2 (en) | 2001-02-12 | 2004-08-17 | Lam Research Corporation | Post-etch photoresist strip with O2 and NH3 for organosilicate glass low-K dielectric etch applications |
| JP2007273866A (en) * | 2006-03-31 | 2007-10-18 | Tokyo Electron Ltd | Etching method, plasma processing apparatus, storage medium |
| US8177990B2 (en) | 2006-03-31 | 2012-05-15 | Tokyo Electron Limited | Etching method, plasma processing system and storage medium |
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