JPS6425537A - Fine pattern forming method - Google Patents

Fine pattern forming method

Info

Publication number
JPS6425537A
JPS6425537A JP62181052A JP18105287A JPS6425537A JP S6425537 A JPS6425537 A JP S6425537A JP 62181052 A JP62181052 A JP 62181052A JP 18105287 A JP18105287 A JP 18105287A JP S6425537 A JPS6425537 A JP S6425537A
Authority
JP
Japan
Prior art keywords
film
pattern
sio2
etched away
protruding pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62181052A
Other languages
Japanese (ja)
Inventor
Yasuhiro Mochizuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP62181052A priority Critical patent/JPS6425537A/en
Publication of JPS6425537A publication Critical patent/JPS6425537A/en
Pending legal-status Critical Current

Links

Landscapes

  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Drying Of Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To make it possible to form a super fine pattern in an arbitrary shape, which is more excellent than the resolution in lithography, by depositing a film having different material quality on the side wall of a pattern, which is resolved by lithography, thereafter removing the initial pattern, and using the deposited film as a new pattern. CONSTITUTION:A polycrystalline silicon film is deposited on a quartz glass substrate 10. Minute machining is performed by ordinary photolithography and dry etching. Thus a protruding pattern 12 is formed. Then, an SiO2 film 15 is formed on said protruding pattern 12. The SiO2 film 13 is etched back. The SiO2 on the substrate 10 and the polycrystalline silicon film pattern 12 is etched away. Then, the protruding pattern 12 of the polycrystalline silicon film is etched away. A protruding pattern 14 of an SiO2 film is formed. An Si film 15 is deposited around said pattern. Then, the a-Si film 15 is etched. The a-Si film on the substrate 10 and the SiO2 protruding pattern 14 is etched away. An SiO2 film 16 is formed on the patters by the similar way described above. The SiO2 film 16 is etched away by the similar way as described above. The protruding pattern 14 for the a-Si film 15 is removed by light excited dry etching by the similar way described above.
JP62181052A 1987-07-22 1987-07-22 Fine pattern forming method Pending JPS6425537A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62181052A JPS6425537A (en) 1987-07-22 1987-07-22 Fine pattern forming method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62181052A JPS6425537A (en) 1987-07-22 1987-07-22 Fine pattern forming method

Publications (1)

Publication Number Publication Date
JPS6425537A true JPS6425537A (en) 1989-01-27

Family

ID=16093934

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62181052A Pending JPS6425537A (en) 1987-07-22 1987-07-22 Fine pattern forming method

Country Status (1)

Country Link
JP (1) JPS6425537A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4998324A (en) * 1990-02-27 1991-03-12 Seicon Co., Ltd. Animal intestine incising apparatus
KR20010003465A (en) * 1999-06-23 2001-01-15 김영환 method of forming fine pattern of semiconductor device
KR100396137B1 (en) * 2001-06-13 2003-08-27 재단법인서울대학교산학협력재단 Method for fabricating ultra-fine multiple patterns
KR100816754B1 (en) * 2006-10-10 2008-03-25 삼성전자주식회사 Pattern Forming Method of Semiconductor Device
JP2010503206A (en) * 2006-08-30 2010-01-28 マイクロン テクノロジー， インク． Single spacer process for multiple pitch multiplication and related intermediate IC structures
JP2017191938A (en) * 2016-04-12 2017-10-19 東京エレクトロン株式会社 Self-aligning spacer formation

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4998324A (en) * 1990-02-27 1991-03-12 Seicon Co., Ltd. Animal intestine incising apparatus
KR20010003465A (en) * 1999-06-23 2001-01-15 김영환 method of forming fine pattern of semiconductor device
KR100396137B1 (en) * 2001-06-13 2003-08-27 재단법인서울대학교산학협력재단 Method for fabricating ultra-fine multiple patterns
JP2010503206A (en) * 2006-08-30 2010-01-28 マイクロン テクノロジー， インク． Single spacer process for multiple pitch multiplication and related intermediate IC structures
KR100816754B1 (en) * 2006-10-10 2008-03-25 삼성전자주식회사 Pattern Forming Method of Semiconductor Device
JP2017191938A (en) * 2016-04-12 2017-10-19 東京エレクトロン株式会社 Self-aligning spacer formation

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