JPS5545019A - Production of photo mask - Google Patents

Production of photo mask

Info

Publication number
JPS5545019A
JPS5545019A JP11769678A JP11769678A JPS5545019A JP S5545019 A JPS5545019 A JP S5545019A JP 11769678 A JP11769678 A JP 11769678A JP 11769678 A JP11769678 A JP 11769678A JP S5545019 A JPS5545019 A JP S5545019A
Authority
JP
Japan
Prior art keywords
patterns
mask
etched
substrate
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11769678A
Other languages
Japanese (ja)
Inventor
Hiroshi Takeuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP11769678A priority Critical patent/JPS5545019A/en
Publication of JPS5545019A publication Critical patent/JPS5545019A/en
Pending legal-status Critical Current

Links

Landscapes

  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

PURPOSE:To obtain the photo mask of superior shielding effect with high accuracy by forming the patterns of organic compound on the mask substrate using SiO2 as the layer to be etched then selectively etching the portions right under the patterns by the gas containing HF. CONSTITUTION:After a negative type photoresist film 2 of 0.05-3mum is cated on a mask substrate 1 of quartz glass, it is selectively etched by a photoetching method, whereby the mask substrate 1 having resist patterns 2 is obtained. This is put in a reactor into which HF gas alone or the gas diluted with inert gas (H2, etc.) is introduced at 6Torr, whereby the substrate 1 right under the patterns 2 is selectively etched at ordinary temperature. In 4 minutes, the surface layer parts are etched to depth 2mum and the patterns 2 sink. Next, the patterns 2 are removed, whereby the photo mask 4 having the patterns 3 which are made non-transparent is obtained. It is also possible to obtain the colored mask by carbonizing the patterns 2 through implantation of Argon ion only without removing the patterns 2.
JP11769678A 1978-09-25 1978-09-25 Production of photo mask Pending JPS5545019A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11769678A JPS5545019A (en) 1978-09-25 1978-09-25 Production of photo mask

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11769678A JPS5545019A (en) 1978-09-25 1978-09-25 Production of photo mask

Publications (1)

Publication Number Publication Date
JPS5545019A true JPS5545019A (en) 1980-03-29

Family

ID=14718028

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11769678A Pending JPS5545019A (en) 1978-09-25 1978-09-25 Production of photo mask

Country Status (1)

Country Link
JP (1) JPS5545019A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5893052A (en) * 1981-11-30 1983-06-02 Seiko Epson Corp Photomask
US5079113A (en) * 1988-09-29 1992-01-07 Sharp Kabushiki Kaisha Photo-mask
US5260150A (en) * 1987-09-30 1993-11-09 Sharp Kabushiki Kaisha Photo-mask with light shielding film buried in substrate
US5380558A (en) * 1991-03-27 1995-01-10 Hoya Corporation Method of manufacturing shaped body having straight stripes
GB2487716A (en) * 2011-01-24 2012-08-08 Memsstar Ltd Vapour Etch of Silicon Dioxide with Improved Selectivity in MEMS structures

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5893052A (en) * 1981-11-30 1983-06-02 Seiko Epson Corp Photomask
US5260150A (en) * 1987-09-30 1993-11-09 Sharp Kabushiki Kaisha Photo-mask with light shielding film buried in substrate
US5079113A (en) * 1988-09-29 1992-01-07 Sharp Kabushiki Kaisha Photo-mask
US5380558A (en) * 1991-03-27 1995-01-10 Hoya Corporation Method of manufacturing shaped body having straight stripes
GB2487716A (en) * 2011-01-24 2012-08-08 Memsstar Ltd Vapour Etch of Silicon Dioxide with Improved Selectivity in MEMS structures
GB2487716B (en) * 2011-01-24 2015-06-03 Memsstar Ltd Vapour Etch of Silicon Dioxide with Improved Selectivity
US10354884B2 (en) 2011-01-24 2019-07-16 Memsstar Limited Vapour etch of silicon dioxide with improved selectivity

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