JPS6425541A - Vertical cvd reaction apparatus - Google Patents
Vertical cvd reaction apparatusInfo
- Publication number
- JPS6425541A JPS6425541A JP18285387A JP18285387A JPS6425541A JP S6425541 A JPS6425541 A JP S6425541A JP 18285387 A JP18285387 A JP 18285387A JP 18285387 A JP18285387 A JP 18285387A JP S6425541 A JPS6425541 A JP S6425541A
- Authority
- JP
- Japan
- Prior art keywords
- tube
- cooling tube
- reaction
- supporting body
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001816 cooling Methods 0.000 abstract 9
- 238000010438 heat treatment Methods 0.000 abstract 3
- 239000012495 reaction gas Substances 0.000 abstract 3
- 239000007789 gas Substances 0.000 abstract 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 1
- 229910002804 graphite Inorganic materials 0.000 abstract 1
- 239000010439 graphite Substances 0.000 abstract 1
Abstract
PURPOSE:To implement uniformity in temperature and to improve power efficiency, by arranging a cooling tube at the center of a reaction tube, arranging a resistor heating means at the outside, arranging an annular wafer supporting body so as to surround the cooling tube, and using the inner surface of said supporting body as a wafer mounting surface. CONSTITUTION:A qaurtz reaction tube 10 is arranged in the vertical direction so that the base part of the tube can be separated from the upper part of a base 12. A central cooling tube 16 is provided through the base 12 along the central axial line of the reaction tube 10 in a protruded pattern. A wafer supporting body 18 is formed with graphite in an annular shape so as to surround the cooling tube 16. A coil heater 20 is wound around the outside of the reaction tube 10 and an external heating type heating means is formed. A rotary driving mechanism 26 for rotating the wafer supporting body 18 around the reaction tube 10 and the cooling tube 16 is provided. Reaction gas including MO gas and the like is guided into the reaction tube 10 through a gas inlet port 50 and divided at an upper end part 16a of the central cooling tube 16. The reaction gas is guided between the cooling tube 16 and a wafer mounting surface 18a of the supporting body 18. A specified film is formed on each wafer W. In this way, the reaction gas is cooled with the central cooling tube 16 and an upper cooling tube 52, and the increase in temperature is suppressed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18285387A JPS6425541A (en) | 1987-07-22 | 1987-07-22 | Vertical cvd reaction apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18285387A JPS6425541A (en) | 1987-07-22 | 1987-07-22 | Vertical cvd reaction apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6425541A true JPS6425541A (en) | 1989-01-27 |
Family
ID=16125601
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18285387A Pending JPS6425541A (en) | 1987-07-22 | 1987-07-22 | Vertical cvd reaction apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6425541A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004507898A (en) * | 2000-09-01 | 2004-03-11 | アイクストロン、アーゲー | Apparatus and method for depositing a particularly crystalline layer on a particularly crystalline substrate |
| JP2006080196A (en) * | 2004-09-08 | 2006-03-23 | Taiyo Nippon Sanso Corp | Vapor growth equipment |
| JP2012144386A (en) * | 2011-01-07 | 2012-08-02 | Denso Corp | Apparatus for producing silicon carbide single crystal |
-
1987
- 1987-07-22 JP JP18285387A patent/JPS6425541A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004507898A (en) * | 2000-09-01 | 2004-03-11 | アイクストロン、アーゲー | Apparatus and method for depositing a particularly crystalline layer on a particularly crystalline substrate |
| JP2006080196A (en) * | 2004-09-08 | 2006-03-23 | Taiyo Nippon Sanso Corp | Vapor growth equipment |
| JP2012144386A (en) * | 2011-01-07 | 2012-08-02 | Denso Corp | Apparatus for producing silicon carbide single crystal |
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