JPS6432632A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS6432632A JPS6432632A JP18753287A JP18753287A JPS6432632A JP S6432632 A JPS6432632 A JP S6432632A JP 18753287 A JP18753287 A JP 18753287A JP 18753287 A JP18753287 A JP 18753287A JP S6432632 A JPS6432632 A JP S6432632A
- Authority
- JP
- Japan
- Prior art keywords
- resin film
- film
- resist
- charged particles
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 239000011347 resin Substances 0.000 abstract 6
- 229920005989 resin Polymers 0.000 abstract 6
- 239000002245 particle Substances 0.000 abstract 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 3
- 229910052799 carbon Inorganic materials 0.000 abstract 3
- 238000005530 etching Methods 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 abstract 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 1
- 229910001882 dioxygen Inorganic materials 0.000 abstract 1
- 229910052760 oxygen Inorganic materials 0.000 abstract 1
- 239000001301 oxygen Substances 0.000 abstract 1
Landscapes
- Drying Of Semiconductors (AREA)
Abstract
PURPOSE:To reduce a charge-up phenomenon by charged particles, and to obtain a pattern shape having high accuracy by transferring a resist pattern acquired by developing a resist after irradiation by charged particles to lower layers through etching in succession. CONSTITUTION:A first layer resin film 3, a second layer carbon film 4, a third layer resin film 5 having high etching resistance against oxygen and a fourth layer resist film 6 are applied successively onto a substrate 2 to be worked. Charged particles 7 are applied. The resist film 6 is developed, and a resist pattern 8 is acquired. The resin film 5 is etched, using the pattern 8 as a mask. The carbon film 4 and the resin film 3 are etched in an atmosphere containing oxygen gas, employing the resin film 5 as a mask. The substrate 2 is worked, using the carbon film 4 and the resin film 3 as masks. Accordingly, a charge-up phenomenon by charged particles is reduced, and a pattern shape having high accuracy is obtained.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18753287A JPS6432632A (en) | 1987-07-29 | 1987-07-29 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18753287A JPS6432632A (en) | 1987-07-29 | 1987-07-29 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6432632A true JPS6432632A (en) | 1989-02-02 |
Family
ID=16207733
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18753287A Pending JPS6432632A (en) | 1987-07-29 | 1987-07-29 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6432632A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6884670B2 (en) | 1993-07-16 | 2005-04-26 | Fujitsu Limited | Dry etching with reduced damage to MOS device |
| JP2005279923A (en) * | 2004-03-29 | 2005-10-13 | Northrop Grumman Corp | Micro electromechanical system |
-
1987
- 1987-07-29 JP JP18753287A patent/JPS6432632A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6884670B2 (en) | 1993-07-16 | 2005-04-26 | Fujitsu Limited | Dry etching with reduced damage to MOS device |
| JP2005279923A (en) * | 2004-03-29 | 2005-10-13 | Northrop Grumman Corp | Micro electromechanical system |
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