JPS6433006A - Production of superconducting oxide and superconducting device - Google Patents

Production of superconducting oxide and superconducting device

Info

Publication number
JPS6433006A
JPS6433006A JP63085102A JP8510288A JPS6433006A JP S6433006 A JPS6433006 A JP S6433006A JP 63085102 A JP63085102 A JP 63085102A JP 8510288 A JP8510288 A JP 8510288A JP S6433006 A JPS6433006 A JP S6433006A
Authority
JP
Japan
Prior art keywords
oxide
superconductor
superconducting
ion
nonsuperconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP63085102A
Other languages
English (en)
Other versions
JP2876211B2 (ja
Inventor
Takahiko Kato
Yoshihide Wadayama
Katsuzo Aihara
Masahiro Ogiwara
Jiro Kuniya
Yutaka Misawa
Yuzo Kozono
Shinpei Matsuda
Masateru Suwa
Juichi Nishino
Ushio Kawabe
Haruhiro Hasegawa
Kazumasa Takagi
Tokumi Fukazawa
Katsumi Miyauchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of JPS6433006A publication Critical patent/JPS6433006A/ja
Application granted granted Critical
Publication of JP2876211B2 publication Critical patent/JP2876211B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H10N60/0661—Processes performed after copper oxide formation, e.g. patterning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/02—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets
    • H01F41/04—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets for manufacturing coils
    • H01F41/048—Superconductive coils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F6/00—Superconducting magnets; Superconducting coils
    • H01F6/06—Coils, e.g. winding, insulating, terminating or casing arrangements therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0884—Treatment of superconductor layers by irradiation, e.g. ion-beam, electron-beam, laser beam or X-rays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0912—Manufacture or treatment of Josephson-effect devices
    • H10N60/0941—Manufacture or treatment of Josephson-effect devices comprising high-Tc ceramic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/20—Permanent superconducting devices
    • H10N60/203—Permanent superconducting devices comprising high-Tc ceramic materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/725—Process of making or treating high tc, above 30 k, superconducting shaped material, article, or device
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/725—Process of making or treating high tc, above 30 k, superconducting shaped material, article, or device
    • Y10S505/73—Vacuum treating or coating

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Oxygen, Ozone, And Oxides In General (AREA)
JP63085102A 1987-04-08 1988-04-08 超電導酸化物の製造方法 Expired - Fee Related JP2876211B2 (ja)

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
JP8477087 1987-04-08
JP62-84770 1987-04-08
JP62-90762 1987-04-15
JP9076287 1987-04-15
JP62-93025 1987-04-17
JP9302587 1987-04-17
JP62-104283 1987-04-30
JP10428387 1987-04-30

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP6286860A Division JPH07187614A (ja) 1987-04-08 1994-11-21 超電導酸化物の製造方法及び超電導体装置

Publications (2)

Publication Number Publication Date
JPS6433006A true JPS6433006A (en) 1989-02-02
JP2876211B2 JP2876211B2 (ja) 1999-03-31

Family

ID=27467007

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63085102A Expired - Fee Related JP2876211B2 (ja) 1987-04-08 1988-04-08 超電導酸化物の製造方法

Country Status (5)

Country Link
US (1) US5096882A (ja)
EP (1) EP0286106B1 (ja)
JP (1) JP2876211B2 (ja)
KR (1) KR880013187A (ja)
DE (1) DE3854238T2 (ja)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01111702A (ja) * 1987-10-24 1989-04-28 Hiroyuki Yoshida 複合酸化物から放射線照射を利用して室温超伝導体を製造する方法
JPH0355889A (ja) * 1989-07-25 1991-03-11 Furukawa Electric Co Ltd:The 超電導多層回路の製造方法
JPH04119905A (ja) * 1989-08-21 1992-04-21 Matsushita Electric Ind Co Ltd 薄膜超伝導体および超伝導素子とそれらの製造方法
US6004508A (en) * 1997-08-01 1999-12-21 The Coca-Cola Company Method and apparatus for super critical treatment of liquids
JP2005347686A (ja) * 2004-06-07 2005-12-15 National Institute For Materials Science 高臨界電流特性を有する超伝導材料及びその製造方法
JP2012530678A (ja) * 2009-06-24 2012-12-06 ヨハンネス フランッティ 高温超伝導体

Families Citing this family (67)

* Cited by examiner, † Cited by third party
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DE3854626T2 (de) * 1987-03-12 1996-07-04 Semiconductor Energy Lab Verfahren zur Herstellung von Komponenten aus supraleitenden oxidkeramischen Materialien.
JP2855614B2 (ja) * 1987-03-30 1999-02-10 住友電気工業株式会社 超電導回路の形成方法
EP0290271B1 (en) * 1987-05-08 1995-03-15 Fujitsu Limited Superconducting circuit board and process of manufacturing it
CA1328242C (en) * 1987-05-18 1994-04-05 Nobuhiko Fujita Process for manufacturing a superconductor and a method for producing a superconducting circuit
JPH079905B2 (ja) * 1987-07-15 1995-02-01 シャープ株式会社 半導体装置の配線方法
JPS6451685A (en) * 1987-08-22 1989-02-27 Sumitomo Electric Industries Formation of superconducting circuit
GB8723516D0 (en) * 1987-10-07 1987-11-11 Atomic Energy Authority Uk Superconducting ceramic circuit elements
US5143894A (en) * 1987-10-14 1992-09-01 Mordechai Rothschild Formation and high resolution patterning of superconductors
FR2647266A1 (fr) * 1989-05-17 1990-11-23 Ecole Cle Arts Manufactures Element de circuit electrique ou electronique comportant un supraconducteur sur lequel sont fixes des elements conducteurs
JP2767298B2 (ja) * 1989-09-05 1998-06-18 財団法人生産開発科学研究所 積層薄膜体及びその製造法
JPH03151231A (ja) * 1989-10-13 1991-06-27 Internatl Business Mach Corp <Ibm> 多層ひずみ格子銅酸化物ペロブスカイト構造体
EP0478466B1 (en) * 1990-09-27 1995-11-08 Sumitomo Electric Industries, Ltd. A superconducting device and a method for manufacturing the same
CA2052380C (en) * 1990-09-27 1998-04-14 Takao Nakamura Superconducting device having an extremely thin superconducting channel formed of oxide superconductor material and method for manufacturing the same
CA2054470C (en) * 1990-10-30 1997-07-01 Takao Nakamura Method for manufacturing superconducting device having a reduced thickness of oxide superconducting layer and superconducting device manufactured thereby
CA2054597C (en) * 1990-10-31 1997-08-19 Hiroshi Inada Superconducting circuit and a process for fabricating the same
CA2054795C (en) * 1990-11-01 1996-08-06 Hiroshi Inada Superconducting device having an extremely thin superconducting channel formed of oxide superconductor material and method for manufacturing the same
US5856275A (en) * 1990-11-01 1999-01-05 Sumitomo Electric Industries, Ltd. Superconducting wiring lines and process for fabricating the same
DE4038894C1 (ja) * 1990-12-06 1992-06-25 Dornier Gmbh, 7990 Friedrichshafen, De
US6308399B1 (en) * 1991-06-18 2001-10-30 Dawei Zhou High-TC superconducting ceramic oxide products and macroscopic and microscopic methods of making the same
WO1993000708A1 (de) * 1991-06-24 1993-01-07 Forschungszentrum Jülich GmbH Strukturierte leiterbahnen und verfahren zur herstellung derselben
JP3287028B2 (ja) * 1991-10-25 2002-05-27 日立電線株式会社 Ｔｌ，Ｐｂ系酸化物超電導材及びその製造方法
US5747427A (en) * 1991-11-15 1998-05-05 Hokkaido Electric Power Co., Inc. Process for forming a semiconductive thin film containing a junction
WO1994002862A1 (en) * 1992-07-20 1994-02-03 Superconductor Technologies, Inc. Superconductor thin film crossovers and method
JPH06219736A (ja) * 1993-01-27 1994-08-09 Hitachi Ltd 超電導体
WO1995002709A2 (en) * 1993-07-15 1995-01-26 President And Fellows Of Harvard College EXTENDED NITRIDE MATERIAL COMPRISING β-C3N¿4?
FR2714205A1 (fr) * 1993-12-17 1995-06-23 Atg Sa Matériau composite pour l'enregistrement magnéto-optique, sa préparation et son utilisation.
JPH07263767A (ja) 1994-01-14 1995-10-13 Trw Inc イオンインプランテーションを用いたプレーナ型の高温超伝導集積回路
US5593918A (en) * 1994-04-22 1997-01-14 Lsi Logic Corporation Techniques for forming superconductive lines
US6153561A (en) * 1996-09-13 2000-11-28 The Ohio State University Method for oxygenating oxide superconductive materials
GB9624586D0 (en) * 1996-11-27 1997-01-15 British Nuclear Fuels Plc Improvements in and relating to coils
GB9805639D0 (en) * 1998-03-18 1998-05-13 Metal Manufactures Ltd Superconducting tapes for alternating current and cables and other conductors in which they are used
US6143366A (en) * 1998-12-24 2000-11-07 Lu; Chung Hsin High-pressure process for crystallization of ceramic films at low temperatures
US6188919B1 (en) 1999-05-19 2001-02-13 Trw Inc. Using ion implantation to create normal layers in superconducting-normal-superconducting Josephson junctions
US6638895B1 (en) * 1999-10-27 2003-10-28 The University Of Chicago Method for fabricating high aspect ratio structures in perovskite material
DE10047625A1 (de) 2000-09-26 2002-04-11 Max Planck Gesellschaft Stöchiometrieänderung eines ionisch aufgebauten Feststoffes
GB0120697D0 (en) 2001-08-24 2001-10-17 Coated Conductors Consultancy Superconducting coil fabrication
WO2006013819A1 (ja) * 2004-08-02 2006-02-09 Matsushita Electric Industrial Co., Ltd. 抵抗変化素子とそれを用いた抵抗変化型メモリ
JP4431891B2 (ja) * 2004-12-28 2010-03-17 セイコーエプソン株式会社 圧電素子、圧電アクチュエーター、圧電ポンプ、インクジェット式記録ヘッド、インクジェットプリンター、表面弾性波素子、薄膜圧電共振子、周波数フィルタ、発振器、電子回路、および電子機器
US7888290B2 (en) * 2005-09-12 2011-02-15 Armen Gulian Material exhibiting superconductivity characteristics and method of manufacture thereof
JP4984466B2 (ja) * 2005-09-21 2012-07-25 住友電気工業株式会社 超電導テープ線材の製造方法
JP2007224747A (ja) * 2006-02-21 2007-09-06 Mitsubishi Motors Corp ディーゼルエンジンの排ガス浄化用フィルタおよび排ガス浄化装置
CN100440388C (zh) * 2006-09-01 2008-12-03 天津理工大学 一种制作abo3型钙钛矿结构复氧化物离子导体的激光熔凝合成方法
US7615385B2 (en) 2006-09-20 2009-11-10 Hypres, Inc Double-masking technique for increasing fabrication yield in superconducting electronics
US20080146449A1 (en) * 2006-12-14 2008-06-19 Jerome Lesueur Electrical device and method of manufacturing same
US8741158B2 (en) 2010-10-08 2014-06-03 Ut-Battelle, Llc Superhydrophobic transparent glass (STG) thin film articles
WO2011017454A1 (en) * 2009-08-04 2011-02-10 Ut-Battelle, Llc Critical current density enhancement via incorporation of nanoscale ba2(y,re) tao6 in rebco films
US20110034336A1 (en) * 2009-08-04 2011-02-10 Amit Goyal CRITICAL CURRENT DENSITY ENHANCEMENT VIA INCORPORATION OF NANOSCALE Ba2(Y,RE)NbO6 IN REBCO FILMS
US9435035B2 (en) 2010-01-15 2016-09-06 Byd Company Limited Metalized plastic articles and methods thereof
CN102071424B (zh) * 2010-02-26 2012-05-09 比亚迪股份有限公司 一种塑料制品的制备方法及一种塑料制品
US8685549B2 (en) 2010-08-04 2014-04-01 Ut-Battelle, Llc Nanocomposites for ultra high density information storage, devices including the same, and methods of making the same
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US11292919B2 (en) 2010-10-08 2022-04-05 Ut-Battelle, Llc Anti-fingerprint coatings
US9221076B2 (en) 2010-11-02 2015-12-29 Ut-Battelle, Llc Composition for forming an optically transparent, superhydrophobic coating
US8748350B2 (en) 2011-04-15 2014-06-10 Ut-Battelle Chemical solution seed layer for rabits tapes
US8748349B2 (en) 2011-04-15 2014-06-10 Ut-Battelle, Llc Buffer layers for REBCO films for use in superconducting devices
WO2013188924A1 (en) 2012-06-21 2013-12-27 Monash University Conductive portions in insulating materials
CN103317240B (zh) * 2013-07-12 2015-09-30 东明兴业科技股份有限公司 镁合金表面氧化层的激光蚀刻加工方法
US9768370B2 (en) * 2013-09-17 2017-09-19 Varian Semiconductor Equipment Associates, Inc. Low AC loss high temperature superconductor tape
US9590161B2 (en) * 2013-11-27 2017-03-07 Varian Semiconductor Equipment Associates, Inc. Laser processing of superconductor layers
US20150239773A1 (en) 2014-02-21 2015-08-27 Ut-Battelle, Llc Transparent omniphobic thin film articles
US9543496B2 (en) * 2014-03-17 2017-01-10 Uchicago Argonne, Llc Creation of high-pinning microstructures in post production YBCO coated conductors
US10283695B1 (en) * 2016-02-29 2019-05-07 The United States Of America As Represented By Secretary Of The Navy Method for creating high-resolution micro- to nano-scale structures in high-temperature superconductor films
KR102145354B1 (ko) * 2018-05-31 2020-08-18 경기대학교 산학협력단 양성자 빔 조사에 의한 산화 환원 사이클을 갖는 수소 생성 방법 및 이를 이용한 수소 생성 장치
KR102149059B1 (ko) * 2018-06-01 2020-08-28 경기대학교 산학협력단 제논광 또는 마이크로웨이브 조사에 의한 산화 환원 사이클을 갖는 수소 생성 방법 및 이를 이용한 수소 생성 장치
US11783953B2 (en) 2018-10-02 2023-10-10 Massachusetts Institute Of Technology Cryogenic radiation enhancement of superconductors
CN111825444B (zh) * 2020-08-04 2022-08-19 上海上创超导科技有限公司 在异位法高温超导薄膜中引入柱状缺陷的方法
CN113470883B (zh) * 2021-06-29 2022-11-11 南京大学 具有高临界参数无毒铜氧化物超导体及其制备方法

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JPS5720486A (en) * 1980-07-11 1982-02-02 Nippon Telegr & Teleph Corp <Ntt> Superconductive integrated circuit and preparation thereof
JPS60173885A (ja) * 1984-02-18 1985-09-07 Nippon Telegr & Teleph Corp <Ntt> 酸化物超伝導材料およびその製造方法
JPS61168530A (ja) * 1985-01-21 1986-07-30 Nippon Telegr & Teleph Corp <Ntt> 酸化物超伝導材料およびその製造方法
JPS61206279A (ja) * 1985-03-11 1986-09-12 Hitachi Ltd 超電導素子
JPS62104283A (ja) * 1985-10-31 1987-05-14 Kokusai Denshin Denwa Co Ltd <Kdd> 動画像伝送における差分復号信号の雑音低減装置
JPS6327837A (ja) * 1986-07-22 1988-02-05 Nissan Motor Co Ltd 自動車用または建材用フォトクロミック材料
JPS63207009A (ja) * 1987-02-24 1988-08-26 Semiconductor Energy Lab Co Ltd 超電導体の作製方法
JPS63207007A (ja) * 1987-02-24 1988-08-26 Semiconductor Energy Lab Co Ltd 超電導体
JPS63224117A (ja) * 1987-03-12 1988-09-19 Semiconductor Energy Lab Co Ltd 超電導体の作製方法
JPS63224116A (ja) * 1987-03-11 1988-09-19 Matsushita Electric Ind Co Ltd 薄膜超電導体の製造方法
JPS63250881A (ja) * 1987-04-07 1988-10-18 Semiconductor Energy Lab Co Ltd 超電導体の作製方法
JPS63250882A (ja) * 1987-04-08 1988-10-18 Semiconductor Energy Lab Co Ltd 酸化物超電導材料の絶縁化方法
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JPS63258082A (ja) * 1987-04-15 1988-10-25 Semiconductor Energy Lab Co Ltd 酸化物超電導材料

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DE3854626T2 (de) * 1987-03-12 1996-07-04 Semiconductor Energy Lab Verfahren zur Herstellung von Komponenten aus supraleitenden oxidkeramischen Materialien.
JPS63241823A (ja) * 1987-03-27 1988-10-07 Nissin Electric Co Ltd 超電導薄膜の製造方法
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JPS5720486A (en) * 1980-07-11 1982-02-02 Nippon Telegr & Teleph Corp <Ntt> Superconductive integrated circuit and preparation thereof
JPS60173885A (ja) * 1984-02-18 1985-09-07 Nippon Telegr & Teleph Corp <Ntt> 酸化物超伝導材料およびその製造方法
JPS61168530A (ja) * 1985-01-21 1986-07-30 Nippon Telegr & Teleph Corp <Ntt> 酸化物超伝導材料およびその製造方法
JPS61206279A (ja) * 1985-03-11 1986-09-12 Hitachi Ltd 超電導素子
JPS62104283A (ja) * 1985-10-31 1987-05-14 Kokusai Denshin Denwa Co Ltd <Kdd> 動画像伝送における差分復号信号の雑音低減装置
JPS6327837A (ja) * 1986-07-22 1988-02-05 Nissan Motor Co Ltd 自動車用または建材用フォトクロミック材料
JPS63207009A (ja) * 1987-02-24 1988-08-26 Semiconductor Energy Lab Co Ltd 超電導体の作製方法
JPS63207007A (ja) * 1987-02-24 1988-08-26 Semiconductor Energy Lab Co Ltd 超電導体
JPS63224116A (ja) * 1987-03-11 1988-09-19 Matsushita Electric Ind Co Ltd 薄膜超電導体の製造方法
JPS63224117A (ja) * 1987-03-12 1988-09-19 Semiconductor Energy Lab Co Ltd 超電導体の作製方法
JPS63250881A (ja) * 1987-04-07 1988-10-18 Semiconductor Energy Lab Co Ltd 超電導体の作製方法
JPS63250882A (ja) * 1987-04-08 1988-10-18 Semiconductor Energy Lab Co Ltd 酸化物超電導材料の絶縁化方法
JPS63255978A (ja) * 1987-04-14 1988-10-24 Sumitomo Electric Ind Ltd 超電導セラミツクス基板の製造方法
JPS63258082A (ja) * 1987-04-15 1988-10-25 Semiconductor Energy Lab Co Ltd 酸化物超電導材料

Cited By (7)

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JPH0355889A (ja) * 1989-07-25 1991-03-11 Furukawa Electric Co Ltd:The 超電導多層回路の製造方法
JPH04119905A (ja) * 1989-08-21 1992-04-21 Matsushita Electric Ind Co Ltd 薄膜超伝導体および超伝導素子とそれらの製造方法
US6004508A (en) * 1997-08-01 1999-12-21 The Coca-Cola Company Method and apparatus for super critical treatment of liquids
US6162392A (en) * 1997-08-01 2000-12-19 The Coca-Cola Company Method and apparatus for super critical treatment of liquids
JP2005347686A (ja) * 2004-06-07 2005-12-15 National Institute For Materials Science 高臨界電流特性を有する超伝導材料及びその製造方法
JP2012530678A (ja) * 2009-06-24 2012-12-06 ヨハンネス フランッティ 高温超伝導体

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EP0286106A3 (en) 1990-03-28
EP0286106B1 (en) 1995-08-02
EP0286106A2 (en) 1988-10-12
JP2876211B2 (ja) 1999-03-31
DE3854238T2 (de) 1996-03-21
US5096882A (en) 1992-03-17
KR880013187A (ko) 1988-11-30
DE3854238D1 (de) 1995-09-07

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