JPS6436023A - Dry etching - Google Patents

Dry etching

Info

Publication number
JPS6436023A
JPS6436023A JP19163687A JP19163687A JPS6436023A JP S6436023 A JPS6436023 A JP S6436023A JP 19163687 A JP19163687 A JP 19163687A JP 19163687 A JP19163687 A JP 19163687A JP S6436023 A JPS6436023 A JP S6436023A
Authority
JP
Japan
Prior art keywords
gas
silicon compound
refractory metal
metal silicon
etching operation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP19163687A
Other languages
Japanese (ja)
Other versions
JP2629721B2 (en
Inventor
Junichi Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP62191636A priority Critical patent/JP2629721B2/en
Publication of JPS6436023A publication Critical patent/JPS6436023A/en
Application granted granted Critical
Publication of JP2629721B2 publication Critical patent/JP2629721B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Landscapes

  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To execute an etching operation without leaving a remaining substance and under a condition of a high selection ratio with reference to a substratum layer by a method wherein the etching operation by using a chlorine gas and the etching operation by using a fluorine gas are combined. CONSTITUTION:When a dry etching operation is executed to a laminated conductive film 5 composed of a refractory metal silicon compound layer 3 formed on a substrate 1 and an aluminum layer 4 formed on this refractory metal silicon compound layer 3, a whole part of the aluminum layer 4 and one part of the refractory metal silicon compound layer 3 are etched selectively by using a chlorine (Cl) gas; a remaining part of the refractory metal silicon compound layer 3 is etched by using a fluorine (F) gas. A refractory metal silicon compound refers to, e.g., MoSi2, WSi12, TaSi2 or the like. As the chlorine gas, e,g., a gas mainly composed of BCl3 is used; as the fluorine-based gas, e.g., a gas composed of SF6 is used.
JP62191636A 1987-07-31 1987-07-31 Dry etching method Expired - Fee Related JP2629721B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62191636A JP2629721B2 (en) 1987-07-31 1987-07-31 Dry etching method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62191636A JP2629721B2 (en) 1987-07-31 1987-07-31 Dry etching method

Publications (2)

Publication Number Publication Date
JPS6436023A true JPS6436023A (en) 1989-02-07
JP2629721B2 JP2629721B2 (en) 1997-07-16

Family

ID=16277952

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62191636A Expired - Fee Related JP2629721B2 (en) 1987-07-31 1987-07-31 Dry etching method

Country Status (1)

Country Link
JP (1) JP2629721B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07254589A (en) * 1995-01-30 1995-10-03 Hitachi Ltd Sample post-treatment method
JPH088236A (en) * 1995-01-30 1996-01-12 Hitachi Ltd Sample processing method
WO2005001161A1 (en) * 2003-06-30 2005-01-06 Tdk Corporation Mask material for reactive ion etching, mask and dry etching method

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS583251A (en) * 1981-06-30 1983-01-10 Toshiba Corp Manufacture of semiconductor device
JPS5917526A (en) * 1982-07-22 1984-01-28 Sumitomo Electric Ind Ltd Photoscanner
JPS59175726A (en) * 1983-03-25 1984-10-04 Fujitsu Ltd Manufacture of semiconductor device
JPS62154759A (en) * 1985-12-27 1987-07-09 Nippon Denso Co Ltd Semiconductor device and manufacture thereof

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS583251A (en) * 1981-06-30 1983-01-10 Toshiba Corp Manufacture of semiconductor device
JPS5917526A (en) * 1982-07-22 1984-01-28 Sumitomo Electric Ind Ltd Photoscanner
JPS59175726A (en) * 1983-03-25 1984-10-04 Fujitsu Ltd Manufacture of semiconductor device
JPS62154759A (en) * 1985-12-27 1987-07-09 Nippon Denso Co Ltd Semiconductor device and manufacture thereof

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07254589A (en) * 1995-01-30 1995-10-03 Hitachi Ltd Sample post-treatment method
JPH088236A (en) * 1995-01-30 1996-01-12 Hitachi Ltd Sample processing method
WO2005001161A1 (en) * 2003-06-30 2005-01-06 Tdk Corporation Mask material for reactive ion etching, mask and dry etching method

Also Published As

Publication number Publication date
JP2629721B2 (en) 1997-07-16

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees