JPS5658247A - Production of semiconductor device - Google Patents

Production of semiconductor device

Info

Publication number
JPS5658247A
JPS5658247A JP13385179A JP13385179A JPS5658247A JP S5658247 A JPS5658247 A JP S5658247A JP 13385179 A JP13385179 A JP 13385179A JP 13385179 A JP13385179 A JP 13385179A JP S5658247 A JPS5658247 A JP S5658247A
Authority
JP
Japan
Prior art keywords
wiring body
layer
flat
wiring
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13385179A
Other languages
Japanese (ja)
Inventor
Chuichi Takada
Ryoji Abe
Hitoshi Hoshino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP13385179A priority Critical patent/JPS5658247A/en
Publication of JPS5658247A publication Critical patent/JPS5658247A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment

Landscapes

  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To obtain a buried wiring layer with a flat surface by covering a wiring body formed on the surface of a substrate with a flat insulation layer while unnecessary sections are removed from the wiring body and the insulation layer by nonselective etching. CONSTITUTION:An SiO2 film 2 is applied on an Si substrate 1, an Al wiring body 3 with a specified pattern is provided thereon and an SiO2 film 4 is formed on the entire surface thereof by CVD method. At this point, as the corresponding part of the film 4 swells with respect to the wiring body 3, high molecular compound such as photoresist and polymide, and a liquid glass is applied and baked until a flat insulator layer 4 is formed. Then, the assembly is placed into a parallel flat plate type reactive sputtering etching device and so etched by a gas mixture of H2 and CCl4 that the wiring body 3 is surrounded with a layer with a flat surface 4 leaving the layer 4 on the surface thereof slightly. Thereafter, the surface of the wiring body 3 is exposed by additional etching if necessary.
JP13385179A 1979-10-17 1979-10-17 Production of semiconductor device Pending JPS5658247A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13385179A JPS5658247A (en) 1979-10-17 1979-10-17 Production of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13385179A JPS5658247A (en) 1979-10-17 1979-10-17 Production of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5658247A true JPS5658247A (en) 1981-05-21

Family

ID=15114507

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13385179A Pending JPS5658247A (en) 1979-10-17 1979-10-17 Production of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5658247A (en)

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5817689A (en) * 1981-07-24 1983-02-01 Fujitsu Ltd Manufacture of josephson circuit
JPS5831560A (en) * 1981-08-19 1983-02-24 Fujitsu Ltd Manufacture of semiconductor device
JPS5854635A (en) * 1981-09-29 1983-03-31 Toshiba Corp Manufacture of semiconductor device
JPS5857738A (en) * 1981-10-01 1983-04-06 Nec Corp Manufacture of semiconductor device
JPS5893327A (en) * 1981-11-30 1983-06-03 Toshiba Corp Minute processing method
JPS5893353A (en) * 1981-11-30 1983-06-03 Nec Corp Manufacture of semiconductor device
JPS5895839A (en) * 1981-12-01 1983-06-07 Nec Corp Manufacture of semiconductor device
JPS58162041A (en) * 1982-03-19 1983-09-26 Matsushita Electronics Corp Formation of thin film
JPS58182833A (en) * 1982-04-19 1983-10-25 ミテル・コ−ポレ−シヨン Method of flattening integrated circuit
JPS58197852A (en) * 1982-05-14 1983-11-17 Nec Corp Manufacture of semiconductor device
JPS5941870A (en) * 1982-08-25 1984-03-08 Toshiba Corp Manufacture of semiconductor device
JPS59124723A (en) * 1982-12-29 1984-07-18 Fujitsu Ltd Manufacture of semiconductor device
JPS59225529A (en) * 1983-06-06 1984-12-18 Toshiba Corp Method for flattening insulation layer
JPS62193147A (en) * 1986-02-19 1987-08-25 Toshiba Corp Manufacturing method of semiconductor device
JPS63182838A (en) * 1987-01-26 1988-07-28 Seiko Instr & Electronics Ltd Manufacture of semiconductor device
JPS63213944A (en) * 1987-03-03 1988-09-06 Seiko Instr & Electronics Ltd Manufacture of semiconductor device
US7378029B2 (en) 2004-02-23 2008-05-27 Tdk Corporation Method for manufacturing magnetic recording medium

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5817689A (en) * 1981-07-24 1983-02-01 Fujitsu Ltd Manufacture of josephson circuit
JPS5831560A (en) * 1981-08-19 1983-02-24 Fujitsu Ltd Manufacture of semiconductor device
JPS5854635A (en) * 1981-09-29 1983-03-31 Toshiba Corp Manufacture of semiconductor device
JPS5857738A (en) * 1981-10-01 1983-04-06 Nec Corp Manufacture of semiconductor device
JPS5893327A (en) * 1981-11-30 1983-06-03 Toshiba Corp Minute processing method
JPS5893353A (en) * 1981-11-30 1983-06-03 Nec Corp Manufacture of semiconductor device
JPS5895839A (en) * 1981-12-01 1983-06-07 Nec Corp Manufacture of semiconductor device
JPS58162041A (en) * 1982-03-19 1983-09-26 Matsushita Electronics Corp Formation of thin film
JPS58182833A (en) * 1982-04-19 1983-10-25 ミテル・コ−ポレ−シヨン Method of flattening integrated circuit
JPS58197852A (en) * 1982-05-14 1983-11-17 Nec Corp Manufacture of semiconductor device
JPS5941870A (en) * 1982-08-25 1984-03-08 Toshiba Corp Manufacture of semiconductor device
JPS59124723A (en) * 1982-12-29 1984-07-18 Fujitsu Ltd Manufacture of semiconductor device
JPS59225529A (en) * 1983-06-06 1984-12-18 Toshiba Corp Method for flattening insulation layer
JPS62193147A (en) * 1986-02-19 1987-08-25 Toshiba Corp Manufacturing method of semiconductor device
JPS63182838A (en) * 1987-01-26 1988-07-28 Seiko Instr & Electronics Ltd Manufacture of semiconductor device
JPS63213944A (en) * 1987-03-03 1988-09-06 Seiko Instr & Electronics Ltd Manufacture of semiconductor device
US7378029B2 (en) 2004-02-23 2008-05-27 Tdk Corporation Method for manufacturing magnetic recording medium

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