JPS6437843A - Method and device for measuring lifetime of semiconductor - Google Patents
Method and device for measuring lifetime of semiconductorInfo
- Publication number
- JPS6437843A JPS6437843A JP19417587A JP19417587A JPS6437843A JP S6437843 A JPS6437843 A JP S6437843A JP 19417587 A JP19417587 A JP 19417587A JP 19417587 A JP19417587 A JP 19417587A JP S6437843 A JPS6437843 A JP S6437843A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- electric field
- lifetime
- semiconductor
- sample
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Testing Of Individual Semiconductor Devices (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
PURPOSE:To prevent carrier recombination on the surface of a sample by simple constitution, and to enable measurement in a short time without contamination, etc., by measuring the lifetime of a semiconductor through a photoconductive attenuation method under the state in which an electric field is applied and carriers are driven out to the end section of a sample semiconductor. CONSTITUTION:An electric field is given by lower and upper electrode plates 11, 12 driven by a DC power 13, excess carriers are driven out to the end section of an Si wafer as a sample, and recombination on the surface of the wafer 9 is prevented. Consequently, pretreatment in which the wafer is thermally oxidized and an oxide film is attached is unnecessitated, and the electric field is applied and the lifetime of the wafer 9 is measured through a photoconductive attenuation method through pulse-beam application by an irradiation light source 2, a reflecting plate 8, a circulator 5, a crystal detector 6, etc. Carrier recombination is prevented without requiring pretreatment according to simple constitution in which the electrode plates for generating the electric field is mounted, thus measuring the lifetime in a short time without contamination, etc., by pretreatment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19417587A JPS6437843A (en) | 1987-08-03 | 1987-08-03 | Method and device for measuring lifetime of semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19417587A JPS6437843A (en) | 1987-08-03 | 1987-08-03 | Method and device for measuring lifetime of semiconductor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6437843A true JPS6437843A (en) | 1989-02-08 |
| JPH0573344B2 JPH0573344B2 (en) | 1993-10-14 |
Family
ID=16320174
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19417587A Granted JPS6437843A (en) | 1987-08-03 | 1987-08-03 | Method and device for measuring lifetime of semiconductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6437843A (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59181549A (en) * | 1983-03-31 | 1984-10-16 | Mitsubishi Metal Corp | Life time measurement of semiconductor wafer |
| JPS6025444A (en) * | 1983-07-22 | 1985-02-08 | Nec Corp | Device for evaluating crystal |
-
1987
- 1987-08-03 JP JP19417587A patent/JPS6437843A/en active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59181549A (en) * | 1983-03-31 | 1984-10-16 | Mitsubishi Metal Corp | Life time measurement of semiconductor wafer |
| JPS6025444A (en) * | 1983-07-22 | 1985-02-08 | Nec Corp | Device for evaluating crystal |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0573344B2 (en) | 1993-10-14 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |