JPS6442390A - Process and apparatus for carrying out liquid phase epitaxial growth - Google Patents
Process and apparatus for carrying out liquid phase epitaxial growthInfo
- Publication number
- JPS6442390A JPS6442390A JP19454687A JP19454687A JPS6442390A JP S6442390 A JPS6442390 A JP S6442390A JP 19454687 A JP19454687 A JP 19454687A JP 19454687 A JP19454687 A JP 19454687A JP S6442390 A JPS6442390 A JP S6442390A
- Authority
- JP
- Japan
- Prior art keywords
- soln
- sink
- epitaxial growth
- small holes
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000007791 liquid phase Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 5
- 238000001914 filtration Methods 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- 239000013078 crystal Substances 0.000 abstract 1
- 230000007547 defect Effects 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 239000002994 raw material Substances 0.000 abstract 1
- 239000002904 solvent Substances 0.000 abstract 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
PURPOSE:To prevent generation of crystal defect due to inferiority of raw material and to obtain an epitaxial layer having good quality by removing solute or oxides in a soln. poured immediately above a semiconductor substrate by filtration, then carrying out epitaxial growth by flowing the soln. on the substrate. CONSTITUTION:An external soln. sink 3 having a stoppable exist hole 6 on the bottom, and an internal soln. sink 4 provided with stoppable small holes 5 having filtration function on the bottom are provided to immediately above a semiconductor substrate 2 housed in a housing base 1 of the substrate. After closing the small holes 5 and the exit hole 6, a solvent for epitaxial growth and a solute are charged to the soln. sink 4, and the content of the sink 4 is melted by heating. Then, the sink 4 is moved upwards and the small holes 5 are opened. Thus, the solute and oxides remaining in the soln. 7 are filtered by the small holes 5. Then, a part or whole of the soln. 7 is transferred to a soln. sink 3, where the temp. of the soln. 7 is adjusted to regulate the degree of saturation of the soln. 7. Thereafter, the exit hole 6 is opened after moving the soln. sink 3 upwards while pouring the soln. 7 on the substrate 2. Thus, epitaxial growth is carried out.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19454687A JPS6442390A (en) | 1987-08-05 | 1987-08-05 | Process and apparatus for carrying out liquid phase epitaxial growth |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19454687A JPS6442390A (en) | 1987-08-05 | 1987-08-05 | Process and apparatus for carrying out liquid phase epitaxial growth |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6442390A true JPS6442390A (en) | 1989-02-14 |
Family
ID=16326332
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19454687A Pending JPS6442390A (en) | 1987-08-05 | 1987-08-05 | Process and apparatus for carrying out liquid phase epitaxial growth |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6442390A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5366552A (en) * | 1991-06-14 | 1994-11-22 | Shin-Etsu Handotai Co., Ltd. | Apparatus for liquid-phase epitaxial growth |
-
1987
- 1987-08-05 JP JP19454687A patent/JPS6442390A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5366552A (en) * | 1991-06-14 | 1994-11-22 | Shin-Etsu Handotai Co., Ltd. | Apparatus for liquid-phase epitaxial growth |
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