JPS6442390A - Process and apparatus for carrying out liquid phase epitaxial growth - Google Patents
Process and apparatus for carrying out liquid phase epitaxial growthInfo
- Publication number
- JPS6442390A JPS6442390A JP19454687A JP19454687A JPS6442390A JP S6442390 A JPS6442390 A JP S6442390A JP 19454687 A JP19454687 A JP 19454687A JP 19454687 A JP19454687 A JP 19454687A JP S6442390 A JPS6442390 A JP S6442390A
- Authority
- JP
- Japan
- Prior art keywords
- soln
- sink
- epitaxial growth
- small holes
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000007791 liquid phase Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 5
- 238000001914 filtration Methods 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- 239000013078 crystal Substances 0.000 abstract 1
- 230000007547 defect Effects 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 239000002994 raw material Substances 0.000 abstract 1
- 239000002904 solvent Substances 0.000 abstract 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19454687A JPS6442390A (en) | 1987-08-05 | 1987-08-05 | Process and apparatus for carrying out liquid phase epitaxial growth |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19454687A JPS6442390A (en) | 1987-08-05 | 1987-08-05 | Process and apparatus for carrying out liquid phase epitaxial growth |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6442390A true JPS6442390A (en) | 1989-02-14 |
Family
ID=16326332
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19454687A Pending JPS6442390A (en) | 1987-08-05 | 1987-08-05 | Process and apparatus for carrying out liquid phase epitaxial growth |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6442390A (ja) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5366552A (en) * | 1991-06-14 | 1994-11-22 | Shin-Etsu Handotai Co., Ltd. | Apparatus for liquid-phase epitaxial growth |
-
1987
- 1987-08-05 JP JP19454687A patent/JPS6442390A/ja active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5366552A (en) * | 1991-06-14 | 1994-11-22 | Shin-Etsu Handotai Co., Ltd. | Apparatus for liquid-phase epitaxial growth |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| GB1528897A (en) | Method of purifying silicon | |
| JPS6442390A (en) | Process and apparatus for carrying out liquid phase epitaxial growth | |
| JPS56149399A (en) | Liquid phase epitaxial growing method | |
| JPS645648A (en) | Pouring nozzle for metal strip continuous casting apparatus | |
| JPS57166395A (en) | Preparing apparatus of ribbon-like crystal | |
| JPS5364465A (en) | Semiconductor crystal production apparatus | |
| EP0284434A3 (en) | Method of forming crystals | |
| JPS5777096A (en) | Liquid phase epitaxial growing apparatus | |
| DE68910598D1 (de) | Zum Aufwachsen aus der Flüssigphase geeigneter integrierter Halbleiterlaser und Verfahren zur Herstellung desselben. | |
| JPS643096A (en) | Method for forming crystal | |
| JPS56109894A (en) | Liquid phase growing apparatus | |
| JPS5645890A (en) | Crystal growing apparatus | |
| JPS5252183A (en) | Multilayer liquid phase growth method | |
| JPS5337184A (en) | Epitaxially growing method in liquid phase | |
| RU2052547C1 (ru) | Устройство для выращивания монокристаллов кремния | |
| JPS5252570A (en) | Device for production of compound semiconductor | |
| Roosz et al. | New technology to produce shaped cast single crystals | |
| JPS61202411A (ja) | 液相エピタキシヤル成長法 | |
| JPS57118100A (en) | Liquid phase epitaxial growing apparatus for crystal | |
| JPS52144382A (en) | Production of single crystal by float-zone melting process | |
| JPS52135264A (en) | Liquid phase epitaxial growth method | |
| JPS52149273A (en) | Production of plate-shaped crystal | |
| JPS55113693A (en) | Semiconductor single crystal producing device | |
| JPS5317065A (en) | Liquid phase growth method for semiconductor substrate | |
| JPS57149725A (en) | Method of epitaxial growth and device therefore |