JPS6447076U - - Google Patents

Info

Publication number
JPS6447076U
JPS6447076U JP13998987U JP13998987U JPS6447076U JP S6447076 U JPS6447076 U JP S6447076U JP 13998987 U JP13998987 U JP 13998987U JP 13998987 U JP13998987 U JP 13998987U JP S6447076 U JPS6447076 U JP S6447076U
Authority
JP
Japan
Prior art keywords
conductive foil
connector
pattern
circuit board
printed circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13998987U
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP13998987U priority Critical patent/JPS6447076U/ja
Publication of JPS6447076U publication Critical patent/JPS6447076U/ja
Pending legal-status Critical Current

Links

Landscapes

  • Printing Elements For Providing Electric Connections Between Printed Circuits (AREA)

Description

【図面の簡単な説明】
第１図は本考案の第１の実施例を示す平面図、
第２図は本考案の第２の実施例を示す平面図、第
３図は第１の従来例を示す平面図、第４図は第２
の従来例であるのＦＰＣの基本的構成を示す断面
図、第５図は第２の従来例を示す平面図である。 ２１…リジツドプリント基板、２２，３２…コ
ネクタ部、２３，３３…コネクタパターン、２４
，３７…導箔ストリツプ、２５，３５…導箔露出
部、２６，３６…隣接導箔露出部との間隔、２７
…端子めつき用導体として使用する導箔露出部端
部、２８…絶縁性ベース、３１…ＦＰＣ、３８…
ベースフイルム、２９，３９…導体パターン、４
０…オーバレイフイルム。

Claims (1)

    【実用新案登録請求の範囲】
  1. 絶縁性ベースの端部に形成されたコネクタパタ
    ーンを露出させてコネクタへの差し込みを可能に
    するコネクタ部を備えたプリント基板のパターン
    構造において、前記コネクタパターンを形成する
    各導箔露出部の少なくとも端縁部が内方の導箔ス
    トリツプ巾よりも巾狭とされるとともに、導箔露
    出部間隔が内方の導箔ストリツプ間隔よりも巾広
    とされてなることを特徴とするプリント基板のパ
    ターン構造。
JP13998987U 1987-09-16 1987-09-16 Pending JPS6447076U (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13998987U JPS6447076U (ja) 1987-09-16 1987-09-16

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13998987U JPS6447076U (ja) 1987-09-16 1987-09-16

Publications (1)

Publication Number Publication Date
JPS6447076U true JPS6447076U (ja) 1989-03-23

Family

ID=31403751

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13998987U Pending JPS6447076U (ja) 1987-09-16 1987-09-16

Country Status (1)

Country Link
JP (1) JPS6447076U (ja)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7098479B1 (en) 1990-12-25 2006-08-29 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
US7115902B1 (en) 1990-11-20 2006-10-03 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
US7507615B2 (en) 1990-11-09 2009-03-24 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing gate insulated field effect transistors
US7547915B2 (en) 1994-06-09 2009-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having SiOxNy film
US7855106B2 (en) 1991-08-26 2010-12-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5524856U (ja) * 1978-08-02 1980-02-18

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5524856U (ja) * 1978-08-02 1980-02-18

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7507615B2 (en) 1990-11-09 2009-03-24 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing gate insulated field effect transistors
US7115902B1 (en) 1990-11-20 2006-10-03 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
US7098479B1 (en) 1990-12-25 2006-08-29 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
US7855106B2 (en) 1991-08-26 2010-12-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
US7547915B2 (en) 1994-06-09 2009-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having SiOxNy film

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