JPS6448470A - Inspection apparatus - Google Patents
Inspection apparatusInfo
- Publication number
- JPS6448470A JPS6448470A JP62204018A JP20401887A JPS6448470A JP S6448470 A JPS6448470 A JP S6448470A JP 62204018 A JP62204018 A JP 62204018A JP 20401887 A JP20401887 A JP 20401887A JP S6448470 A JPS6448470 A JP S6448470A
- Authority
- JP
- Japan
- Prior art keywords
- sample
- detecting signal
- signal
- detecting
- absorbing current
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000007689 inspection Methods 0.000 title 1
- 238000011179 visual inspection Methods 0.000 abstract 2
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Analysing Materials By The Use Of Radiation (AREA)
Abstract
PURPOSE:To enhance the accuracy of a visual inspection for a sample, by combining a first detecting signal with a second detecting signal which is obtained by detecting a sample absorbing current which is generated by capturing secondary electrons and reflected electrons together. CONSTITUTION:A sample 1 absorbs some of secondary electrons 3a and reflected electrons 3b together to generate a sample absorbing current ISC. A second detector 7 outputs a second detecting signal 7a based on the sample absorbing current ISC. A first detecting signal is combined with the signal which is inversions of the second detecting signal 7a to form a picture signal 10a. As a result, the bottom configurations of a hole pattern and the like with a high aspect ratio which are formed on the surface of the sample 1 can be clearly observed with a good contrast. Accordingly, the picture signal can be formed with the lack of the first detecting signal being compensated for thereby the accuracy of a visual inspection can be effectively enhanced without being affected by the surface configuration of the sample.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62204018A JPS6448470A (en) | 1987-08-19 | 1987-08-19 | Inspection apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62204018A JPS6448470A (en) | 1987-08-19 | 1987-08-19 | Inspection apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6448470A true JPS6448470A (en) | 1989-02-22 |
Family
ID=16483407
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62204018A Pending JPS6448470A (en) | 1987-08-19 | 1987-08-19 | Inspection apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6448470A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5412210A (en) * | 1990-10-12 | 1995-05-02 | Hitachi, Ltd. | Scanning electron microscope and method for production of semiconductor device by using the same |
| US5472917A (en) * | 1990-08-29 | 1995-12-05 | Paroc Oy Ab | Raw material briquette for mineral wool production and process for its preparation and its use |
| US5594245A (en) * | 1990-10-12 | 1997-01-14 | Hitachi, Ltd. | Scanning electron microscope and method for dimension measuring by using the same |
| EP0930638A1 (en) * | 1990-10-12 | 1999-07-21 | Hitachi, Ltd. | Scanning electron microscope, production method for semiconductor device by using the same, image forming method |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5481075A (en) * | 1977-11-24 | 1979-06-28 | Cho Lsi Gijutsu Kenkyu Kumiai | Method of detecting article image using electron beam |
| JPS58182504A (en) * | 1982-04-19 | 1983-10-25 | Mitsubishi Electric Corp | Detection of mark by electron beam |
| JPS60239038A (en) * | 1985-04-17 | 1985-11-27 | Hitachi Ltd | Semiconductor inspecting device |
| JPS6113638A (en) * | 1984-06-28 | 1986-01-21 | Matsushita Electronics Corp | Inspection for surface configuration of semiconductor device |
| JPS61124810A (en) * | 1984-11-22 | 1986-06-12 | Hitachi Ltd | Pattern shape inspecting apparatus |
| JPS61239107A (en) * | 1985-04-17 | 1986-10-24 | Hitachi Ltd | Depth measurement method |
-
1987
- 1987-08-19 JP JP62204018A patent/JPS6448470A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5481075A (en) * | 1977-11-24 | 1979-06-28 | Cho Lsi Gijutsu Kenkyu Kumiai | Method of detecting article image using electron beam |
| JPS58182504A (en) * | 1982-04-19 | 1983-10-25 | Mitsubishi Electric Corp | Detection of mark by electron beam |
| JPS6113638A (en) * | 1984-06-28 | 1986-01-21 | Matsushita Electronics Corp | Inspection for surface configuration of semiconductor device |
| JPS61124810A (en) * | 1984-11-22 | 1986-06-12 | Hitachi Ltd | Pattern shape inspecting apparatus |
| JPS60239038A (en) * | 1985-04-17 | 1985-11-27 | Hitachi Ltd | Semiconductor inspecting device |
| JPS61239107A (en) * | 1985-04-17 | 1986-10-24 | Hitachi Ltd | Depth measurement method |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5472917A (en) * | 1990-08-29 | 1995-12-05 | Paroc Oy Ab | Raw material briquette for mineral wool production and process for its preparation and its use |
| US5412210A (en) * | 1990-10-12 | 1995-05-02 | Hitachi, Ltd. | Scanning electron microscope and method for production of semiconductor device by using the same |
| US5594245A (en) * | 1990-10-12 | 1997-01-14 | Hitachi, Ltd. | Scanning electron microscope and method for dimension measuring by using the same |
| EP0930638A1 (en) * | 1990-10-12 | 1999-07-21 | Hitachi, Ltd. | Scanning electron microscope, production method for semiconductor device by using the same, image forming method |
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