JPS6449252A - Manufacture of groove-shaped capacitor - Google Patents
Manufacture of groove-shaped capacitorInfo
- Publication number
- JPS6449252A JPS6449252A JP62206742A JP20674287A JPS6449252A JP S6449252 A JPS6449252 A JP S6449252A JP 62206742 A JP62206742 A JP 62206742A JP 20674287 A JP20674287 A JP 20674287A JP S6449252 A JPS6449252 A JP S6449252A
- Authority
- JP
- Japan
- Prior art keywords
- film
- groove
- silicon
- capacitor
- silicon oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000003990 capacitor Substances 0.000 title abstract 5
- 238000004519 manufacturing process Methods 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 4
- 229910052710 silicon Inorganic materials 0.000 abstract 4
- 239000010703 silicon Substances 0.000 abstract 4
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 4
- 238000009792 diffusion process Methods 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 2
- 239000012535 impurity Substances 0.000 abstract 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- 229920005591 polysilicon Polymers 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate
Landscapes
- Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To obtain a capacitor of high reliability by a method wherein, when a silicon nitride film is to be removed, a diffusion layer is covered with a silicon oxide film in order to prevent an irregularity in the concentration of an impurity in the diffusion layer. CONSTITUTION:A first silicon oxide film 2, a silicon nitride film 3 and a second silicon oxide film 4 are laminated in succession on a silicon substrate 1; a laminated film is formed. An opening is made in the laminated film. The substrate 1 is etched through the opening; a groove 5 is formed. An impurity diffusion layer 6 is formed on an inner wall of the groove 5. The silicon film 4 is removed. A third silicon oxide film 7 is formed on the inner wall of the groove 5. The silicon film 3 is removed. The silicon film 7 is removed. The surface of the substrate 1 including the inner wall of the groove 5 is oxidized; a dielectric film 8 to be used for a capacitor is formed. A polysilicon film 9 to be used as one electrode for the capacitor is formed on the dielectric film 8. By this setup, the capacitor of high reliability can be obtained.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62206742A JPS6449252A (en) | 1987-08-20 | 1987-08-20 | Manufacture of groove-shaped capacitor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62206742A JPS6449252A (en) | 1987-08-20 | 1987-08-20 | Manufacture of groove-shaped capacitor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6449252A true JPS6449252A (en) | 1989-02-23 |
Family
ID=16528348
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62206742A Pending JPS6449252A (en) | 1987-08-20 | 1987-08-20 | Manufacture of groove-shaped capacitor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6449252A (en) |
-
1987
- 1987-08-20 JP JP62206742A patent/JPS6449252A/en active Pending
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