JPS6449258A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS6449258A
JPS6449258A JP20686787A JP20686787A JPS6449258A JP S6449258 A JPS6449258 A JP S6449258A JP 20686787 A JP20686787 A JP 20686787A JP 20686787 A JP20686787 A JP 20686787A JP S6449258 A JPS6449258 A JP S6449258A
Authority
JP
Japan
Prior art keywords
insulating film
executed
semiconductor device
mesa
etched
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP20686787A
Other languages
Japanese (ja)
Inventor
Akira Takemoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP20686787A priority Critical patent/JPS6449258A/en
Publication of JPS6449258A publication Critical patent/JPS6449258A/en
Pending legal-status Critical Current

Links

Landscapes

  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE:To obtain a semiconductor device of a high response speed by a method wherein all photolithographic operations of a semiconductor substrate are executed in a flat state and, after that, a mesa-type formation is carried out so that a microscopic process can be executed. CONSTITUTION:An insulating film 2 is formed on a semiconductor substrate 1. The insulating film 2 in a region to which an electric current is to flow is etched by a photolithographic operation; a window 5 is formed. An electrode 3 is formed on the whole surface. The insulating film 2 and the electrode 3 are etched, e.g., to be comb-shaped by another photolithographic operation. The substrate 1 is etched by making use of the insulating film 2 and the electrode 3 as masks; a mesa is formed. Because the photolithographic operation is executed prior to the formation of the mesa, a microscopic process can be executed. By this setup, a semiconductor device of a high response speed can thus be obtained.
JP20686787A 1987-08-19 1987-08-19 Manufacture of semiconductor device Pending JPS6449258A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20686787A JPS6449258A (en) 1987-08-19 1987-08-19 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20686787A JPS6449258A (en) 1987-08-19 1987-08-19 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS6449258A true JPS6449258A (en) 1989-02-23

Family

ID=16530351

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20686787A Pending JPS6449258A (en) 1987-08-19 1987-08-19 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS6449258A (en)

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