JPS6450436A - Method of measuring characteristic of semiconductor device - Google Patents
Method of measuring characteristic of semiconductor deviceInfo
- Publication number
- JPS6450436A JPS6450436A JP20792587A JP20792587A JPS6450436A JP S6450436 A JPS6450436 A JP S6450436A JP 20792587 A JP20792587 A JP 20792587A JP 20792587 A JP20792587 A JP 20792587A JP S6450436 A JPS6450436 A JP S6450436A
- Authority
- JP
- Japan
- Prior art keywords
- high frequency
- semiconductor
- elements
- semiconductor wafer
- measured
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 10
- 239000000523 sample Substances 0.000 abstract 3
- 230000005540 biological transmission Effects 0.000 abstract 1
- 238000005259 measurement Methods 0.000 abstract 1
Landscapes
- Testing Of Individual Semiconductor Devices (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
PURPOSE:To make it possible to perform automatic measurement of high frequency characteristics of a semiconductor elements accurately, by checking contact conditions of a high frequency probe and the semiconductor element by the use of as a reference impedance elements, which are formed at a plurality of places on a semiconductor wafer, and measuring the characteristics of the semiconductor elements. CONSTITUTION:Many semiconductor elements 2 having transistors, diodes, resistors and the like are formed on a semiconductor wafer 1. At this time, reference impedance elements 3... are formed at four places corresponding to the corner parts of, e.g., a rectangular pattern. A high frequency probe head 14 is brought into contact with each impedance element 3. The reflection or the transmission characteristics are measured. The measured values are compared with the preset characteristic values. Then, the quality of contact conditions between the high frequency probe head 14 and each semiconductor element 2 in high frequency can be judged. Thus many semiconductor elements 2 can be continuously measured without the effect of the warping of the semiconductor wafer 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20792587A JPS6450436A (en) | 1987-08-20 | 1987-08-20 | Method of measuring characteristic of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20792587A JPS6450436A (en) | 1987-08-20 | 1987-08-20 | Method of measuring characteristic of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6450436A true JPS6450436A (en) | 1989-02-27 |
Family
ID=16547823
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20792587A Pending JPS6450436A (en) | 1987-08-20 | 1987-08-20 | Method of measuring characteristic of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6450436A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0351777A (en) * | 1989-07-19 | 1991-03-06 | Matsushita Electric Ind Co Ltd | Apparatus and method for measuring semiconductor device |
| WO2022045327A1 (en) * | 2020-08-31 | 2022-03-03 | 住友化学株式会社 | Methanol production method |
-
1987
- 1987-08-20 JP JP20792587A patent/JPS6450436A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0351777A (en) * | 1989-07-19 | 1991-03-06 | Matsushita Electric Ind Co Ltd | Apparatus and method for measuring semiconductor device |
| WO2022045327A1 (en) * | 2020-08-31 | 2022-03-03 | 住友化学株式会社 | Methanol production method |
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