JPS6461018A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS6461018A JPS6461018A JP62219451A JP21945187A JPS6461018A JP S6461018 A JPS6461018 A JP S6461018A JP 62219451 A JP62219451 A JP 62219451A JP 21945187 A JP21945187 A JP 21945187A JP S6461018 A JPS6461018 A JP S6461018A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- film
- iii
- compound semiconductor
- arsenide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 238000004519 manufacturing process Methods 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 6
- 150000001875 compounds Chemical class 0.000 abstract 3
- 235000012239 silicon dioxide Nutrition 0.000 abstract 3
- 239000000377 silicon dioxide Substances 0.000 abstract 3
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 abstract 2
- AUCDRFABNLOFRE-UHFFFAOYSA-N alumane;indium Chemical compound [AlH3].[In] AUCDRFABNLOFRE-UHFFFAOYSA-N 0.000 abstract 2
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Landscapes
- Thin Film Transistor (AREA)
- Recrystallisation Techniques (AREA)
- Bipolar Transistors (AREA)
- Junction Field-Effect Transistors (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Abstract
PURPOSE:To improve the bondability of a silicon dioxide film with III-V compound semiconductor layer by forming a III-V compound semiconductor film containing aluminum between the silicon dioxide layer and the III-V compound semiconductor layer. CONSTITUTION:An n-type gallium indium arsenide layer 2 is grown on a semi- insulating InP substrate 1, and indium aluminum arsenide film 4 is grown thereon. An SiO2 film 3 and the film 4 are etched to form an opening 5 for a base layer and an emitter layer. A p-type gallium indium arsenide layer 6 and an n-type indium aluminum arsenide layer 7 are formed. The layer 7 is mesa etched, and electrodes 8, 9, 10 are formed. The base layer made of the layer 6 on the film 3 becomes a polycrystalline, and the bondability to the film 3 is improved due to the presence of the film 4.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62219451A JPS6461018A (en) | 1987-09-01 | 1987-09-01 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62219451A JPS6461018A (en) | 1987-09-01 | 1987-09-01 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6461018A true JPS6461018A (en) | 1989-03-08 |
Family
ID=16735625
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62219451A Pending JPS6461018A (en) | 1987-09-01 | 1987-09-01 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6461018A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04101429A (en) * | 1990-08-20 | 1992-04-02 | Matsushita Electric Ind Co Ltd | Heterojunction bipolar transistor and its manufacturing method |
-
1987
- 1987-09-01 JP JP62219451A patent/JPS6461018A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04101429A (en) * | 1990-08-20 | 1992-04-02 | Matsushita Electric Ind Co Ltd | Heterojunction bipolar transistor and its manufacturing method |
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