JPS6461018A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number: JPS6461018A
Authority: JP; Japan
Prior art keywords: layer; film; iii; compound semiconductor; arsenide
Prior art date: 1987-09-01
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Pending

Application number

JP62219451A

Other languages

English (en)

Inventor

Akihiko Okamoto

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

NEC Corp

Original Assignee

NEC Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1987-09-01

Filing date

1987-09-01

Publication date

1989-03-08

1987-09-01 Application filed by NEC Corp filed Critical NEC Corp

1987-09-01 Priority to JP62219451A priority Critical patent/JPS6461018A/ja

1989-03-08 Publication of JPS6461018A publication Critical patent/JPS6461018A/ja

Status Pending legal-status Critical Current

Links

239000004065 semiconductor Substances 0.000 title abstract 4
238000004519 manufacturing process Methods 0.000 title 1
VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 6
150000001875 compounds Chemical class 0.000 abstract 3
235000012239 silicon dioxide Nutrition 0.000 abstract 3
239000000377 silicon dioxide Substances 0.000 abstract 3
229910000530 Gallium indium arsenide Inorganic materials 0.000 abstract 2
AUCDRFABNLOFRE-UHFFFAOYSA-N alumane;indium Chemical compound [AlH3].[In] AUCDRFABNLOFRE-UHFFFAOYSA-N 0.000 abstract 2
229910052782 aluminium Inorganic materials 0.000 abstract 1
XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
229910052681 coesite Inorganic materials 0.000 abstract 1
229910052906 cristobalite Inorganic materials 0.000 abstract 1
229910052682 stishovite Inorganic materials 0.000 abstract 1
239000000758 substrate Substances 0.000 abstract 1
229910052905 tridymite Inorganic materials 0.000 abstract 1

Landscapes

Thin Film Transistor (AREA)
Recrystallisation Techniques (AREA)
Bipolar Transistors (AREA)
Junction Field-Effect Transistors (AREA)
Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

JP62219451A 1987-09-01 1987-09-01 Manufacture of semiconductor device Pending JPS6461018A (en)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
JP62219451A JPS6461018A (en)	1987-09-01	1987-09-01	Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP62219451A JPS6461018A (en)	1987-09-01	1987-09-01	Manufacture of semiconductor device

Publications (1)

Publication Number	Publication Date
JPS6461018A true JPS6461018A (en)	1989-03-08

Family

ID=16735625

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP62219451A Pending JPS6461018A (en)	1987-09-01	1987-09-01	Manufacture of semiconductor device

Country Status (1)

Country	Link
JP (1)	JPS6461018A (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPH04101429A (ja) *	1990-08-20	1992-04-02	Matsushita Electric Ind Co Ltd	ヘテロ接合バイポーラトランジスタおよびその製造方法

1987
- 1987-09-01 JP JP62219451A patent/JPS6461018A/ja active Pending

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPH04101429A (ja) *	1990-08-20	1992-04-02	Matsushita Electric Ind Co Ltd	ヘテロ接合バイポーラトランジスタおよびその製造方法

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